BDS18_10

SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18 • • • High Voltage Hermetic TO220 Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC ≤ 75°C Total Power Dissipation at Derate Above 75°C Junction Temperature Range Storage Temperature Range -120V -120V -5V -8A -2A 50W 0.4W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Max. 2.5 Units °C/W ** This datasheet supersedes document 3346 Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8667 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO ICEO ICBO IEBO hFE (1) (1) Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Forward-current transfer ratio Test Conditions IC = -10mA VCE = -60V VCB = -120V VEB = -5V IC = -0.5A IC = -4A IC = -0.5A IC = -4A IC = -1.0A IB = 0 IB = 0 IE = 0 IC = 0 VCE = -2V VCE = -2V IB = -0.05A IB = -0.4A VCE = -2V Min. -120 Typ Max. Units V -0.1 -20 -10 40 15 250 150 -0.4 -1.5 -1.4 mA µA VCE(sat) VBE(on) (1) Collector-Emitter Saturation Voltage Base-Emitter Voltage V (1) DYNAMIC CHARACTERISTICS fT Transition Frequency IC = -0.5A f = 5MHz Turn-On Time Storage Time Fall Time IC = -2A IB1 = -0.2A IC = -2A VCC = -80V VCC = -80V 0.5 µs 1.5 0.3 VCE = -4V 10 MHz ton ts tf IB1 = - IB2 = -0.2A Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8667 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18 MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.33 (0.210) 0.64 (0.025) 0.89 (0.035) 10.92 (0.430) 10.41 (0.410) 13.21 (0.52) 13.72 (0.54) 13.21 (0.52) 13.72 (0.54) 3.56 (0.140) Dia 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 1 2 3 12.70 (0.500) 14.73 (0.750) 0.89 (0.035) Dia. 1.27 (0.050) 2.54 (0.100) BSC 3.05 (0.120) BSC TO220M (TO-257AB) Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8667 Issue 1 Page 3 of 3