BDS20

SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20 • • • High DC Current Gain Hermetic Metal TO-220 Package Designed For General Purpose Amplifiers and Low Speed Switching Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 80V 80V 5V 5A 0.1A 35W 0.2W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 5 Units °C/W ** This datasheet supersedes document 7603 Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8215 Issue 1 Page 1 of 2 Website: http://www.semelab-tt.com SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols ICBO Parameters Collector-Cut-Off Current Test Conditions VCB = 80V VCB = 60V IE = 0 IE = 0 TC = 150°C Min. Typ Max. 0.2 1.0 0.5 2 Units mA ICEO IEBO hFE (1) Collector-Cut-Off Current Emitter-Cut-Off Current Forward-current transfer ratio (1) VCE = 40V VEB = 5V IC = 0.5A IC = 3A IC = 3A IC = 5A IC = 5A IC = 3A IB = 0 IC = 0 VCE = 3V VCE = 3V IB = 12mA IB = 20mA IB = 20mA VCE = 3V 1000 1000 VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 2 4 V 2.8 3.5 (1) (1) DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 0.5A f = 2MHz VCE = 4V 8 MHz Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% 10.6 (0.42) 0.8 (0.03) 4.6 (0.18) MECHANICAL DATA Dimensions in mm (inches) 16.5 (0.65) 3.70 Dia. Nom 1.5(0.53) 10.6 (0.42) 123 12.70 (0.50 min) TO220M(TO-257AB) Pin 1 – Base Pin 2 – Collector Pin 3 - Emitter 2.54 (0.1) BSC 1.0 (0.039) 2.70 (0.106) S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8215 Issue 1 Page 2 of 2