BFY81

SILICON DUAL MATCHED NPN TRANSISTORS BFY81 • • • • Dual Silicon Matched Planar Transistors Hermetic TO-77 (MO-002AF) Metal Package. Ideally Suited For Differential And Low Level Dc Amplifiers Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current One Side 45V 45V 6V 50mA Both Sides Total Power Dissipation at TA = 25°C Derate Above 25°C Total Power Dissipation at TC = 25°C Derate Above 25°C Junction Temperature Range Storage Temperature Range 400mW 500mW 2.3mW/°C 2.9mW/°C 800mW 1.3W 4.6mW/°C 7.4mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case One Side Max. 437 219 Both Sides Max. Units 350 135 °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8502 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON DUAL MATCHED NPN TRANSISTORS BFY81 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Per Side Symbols V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICEO VCE(sat) VBE(on) (1) (1) (1) Parameters Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter-Cut-Off Current Collector-Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage Forward-current transfer ratio Test Conditions IC = 10µA IC = 10mA IE = 10µA VCB = 40V IE = 0 IB = 0 IC = 0 IE = 0 TA = 150°C VEB = 5V VCE = 5V IC = 1.0mA IC = 100µA IC = 10µA IC = 0 IB = 0 IB = 0.1mA VCE = 5V VCE = 5V VCE = 5V VCE = 5V Min. 45 45 6 Typ. Max. Units V 10 10 10 10 0.35 0.7 60 100 150 nA µA nA V hFE IC = 100µA IC = 1.0mA ELECTRICAL MATCHING CHARACTERISTICS hFE1 hFE2 (2) Forward-current transfer ratio (gain ratio) Base-Emitter Voltage Differential Base-Emitter Voltage Differential Change Due To Temperature IC = 100µA IC = 100µA IC = 100µA VCE = 5V VCE = 5V VCE = 5V 0.8 1.0 10 25 mV |VBE1-VBE2| |∆(VBE1-VBE2)∆TA| (3) µV/°C DYNAMIC CHARACTERISTICS | hfe | Small signal forwardcurrent transfer ratio Output Capacitance IC = 500µA f = 30MHz VCB = 5V f = 1.0MHz IC = 10µA f = 1.0KHz VCE = 5V IE = 0 6 pF VCE = 5V 2 Cobo NF (3) Noise Figure 4 dB Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) The lower of the two readings is taken as hFE1 (3) By design only, not a production test S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8502 Issue 1 Page 2 of 3 SILICON DUAL MATCHED NPN TRANSISTORS BFY81 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 1.02 (0.040) Max. 12.7 (0.500) Min. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 2.54 (0.100) 3 2 4 5 6 1 0.74 (0.029) 1.14 (0.045) 45˚ 0.71 (0.028) 0.86 (0.034) TO-77 (MO-002AF) Underside View Pin 1 Collector 1 Pin 4 Emitter 2 Pin 2 Base 1 Pin 5 Base 2 Pin 3 Emitter 1 Pin 6 Collector 2 S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8502 Issue 1 Page 3 of 3