SILICON DUAL MATCHED NPN TRANSISTORS BFY81
• • • • Dual Silicon Matched Planar Transistors Hermetic TO-77 (MO-002AF) Metal Package. Ideally Suited For Differential And Low Level Dc Amplifiers Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current
One Side
45V 45V 6V 50mA
Both Sides
Total Power Dissipation at TA = 25°C Derate Above 25°C Total Power Dissipation at TC = 25°C Derate Above 25°C Junction Temperature Range Storage Temperature Range
400mW 500mW 2.3mW/°C 2.9mW/°C 800mW 1.3W 4.6mW/°C 7.4mW/°C -65 to +200°C -65 to +200°C
THERMAL PROPERTIES
Symbols
RθJA RθJC
Parameters
Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case
One Side Max.
437 219
Both Sides Max. Units
350 135 °C/W °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8502 Issue 1 Page 1 of 3
Website: http://www.semelab-tt.com
SILICON DUAL MATCHED NPN TRANSISTORS BFY81
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Per Side
Symbols
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICEO VCE(sat) VBE(on)
(1) (1) (1)
Parameters
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter-Cut-Off Current Collector-Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage Forward-current transfer ratio
Test Conditions
IC = 10µA IC = 10mA IE = 10µA VCB = 40V IE = 0 IB = 0 IC = 0 IE = 0 TA = 150°C VEB = 5V VCE = 5V IC = 1.0mA IC = 100µA IC = 10µA IC = 0 IB = 0 IB = 0.1mA VCE = 5V VCE = 5V VCE = 5V VCE = 5V
Min.
45 45 6
Typ.
Max.
Units
V
10 10 10 10 0.35 0.7 60 100 150
nA µA nA
V
hFE
IC = 100µA IC = 1.0mA
ELECTRICAL MATCHING CHARACTERISTICS
hFE1 hFE2
(2)
Forward-current transfer ratio (gain ratio) Base-Emitter Voltage Differential Base-Emitter Voltage Differential Change Due To Temperature
IC = 100µA IC = 100µA IC = 100µA
VCE = 5V VCE = 5V VCE = 5V
0.8
1.0 10 25 mV
|VBE1-VBE2| |∆(VBE1-VBE2)∆TA|
(3)
µV/°C
DYNAMIC CHARACTERISTICS
| hfe | Small signal forwardcurrent transfer ratio Output Capacitance IC = 500µA f = 30MHz VCB = 5V f = 1.0MHz IC = 10µA f = 1.0KHz VCE = 5V IE = 0 6 pF VCE = 5V 2
Cobo NF
(3)
Noise Figure
4
dB
Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) The lower of the two readings is taken as hFE1 (3) By design only, not a production test
S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8502 Issue 1 Page 2 of 3
SILICON DUAL MATCHED NPN TRANSISTORS BFY81
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
1.02 (0.040) Max.
12.7 (0.500) Min.
0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100)
2.54 (0.100)
3 2
4 5 6 1
0.74 (0.029) 1.14 (0.045)
45˚
0.71 (0.028) 0.86 (0.034)
TO-77 (MO-002AF)
Underside View Pin 1 Collector 1 Pin 4 Emitter 2 Pin 2 Base 1 Pin 5 Base 2 Pin 3 Emitter 1 Pin 6 Collector 2
S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8502 Issue 1 Page 3 of 3
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