BUX78A-220M

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • • • High Power Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) BUX77A NPN 100V 80V 6V BUX78A PNP -100V -80V -6V VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 8A 2A 50W 0.29W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 3.5 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 5339 Issue 4 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M / BUX78A-220M ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) (1) Symbols V(BR)CEO V(BR)CES V(BR)EBO ICEO ICBO IEBO (2) Parameters Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Test Conditions IC = 50mA IC = 2mA IE = 1.0mA VCE = 60V VCB = 80V IB = 0 VBE = 0 IC = 0 IB = 0 IE = 0 TC = 150°C VEB = 4V IC = 0.5A IC = 2A IC = 0 VCE = 5V VCE = 5V VCE = 5V VCE = 5V TC = -40°C Min. 80 100 6 Typ Max. Units V 10 0.5 150 0.5 50 50 30 25 1.0 V 1.3 250 µA hFE (2) Forward-current transfer ratio IC = 5A IC = 1.0A VCE(sat) VBE(sat) (2) (2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 5A IC = 5A IB = 0.5A IB = 0.5A DYNAMIC CHARACTERISTICS |hfe| Small signal forward-current transfer ratio Turn-On Time IC = 0.5A f = 20MHz IC = 5A IB1 = 0.5A IC = 5A IB1 = - IB2 = 0.5A VCC = 40V VCC = 40V 0.3 0.4 µs 1.1 2.5 VCE = 5V 1.5 ton toff Turn-Off Time Notes Notes (1) For PNP (BUX78A) device, voltage and current values are negative (2) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5339 Issue 4 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M / BUX78A-220M MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.33 (0.210) 0.64 (0.025) 0.89 (0.035) 10.92 (0.430) 10.41 (0.410) 13.21 (0.52) 13.72 (0.54) 13.21 (0.52) 13.72 (0.54) 3.56 (0.140) Dia 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 1 2 3 12.70 (0.500) 14.73 (0.750) 0.89 (0.035) Dia. 1.27 (0.050) 2.54 (0.100) BSC 3.05 (0.120) BSC TO220M (TO-257AB) Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5339 Issue 4 Page 3 of 3