SMLBFY90

SILICON PLANAR EPITAXIAL NPN TRANSISTOR Semelab Limited SMLBFY90 • LOW NOISE TRANSISTOR • FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VCEO VEBO IC(AV) ICM Ptot Tstg Tj Collector - Base Voltage Collector - Emitter Voltage (RBE ≤ 50Ω) Collector - Emitter Voltage Emitter - Base Voltage Average Collector Current Peak Collector Current (f ≥ 1MHz) Power Dissipation at TA = 25°C Storage Temperature Junction Temperature 30V 30V 15V 2.5V 25mA 50mA 200mW 200°C -65 to +200°C THERMAL PROPERTIES Parameters RθJA RθJC Junction - ambient thermal resistance Junction - case thermal resistance Min. Typ. Max. ≤ 880 ≤ 580 Unit °C/W °C/W * Pulse Test tp = 300μs, δ ≤ 2% (1) Shield Lead (case) not connected (2) Shield Lead (case) grounded Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK. Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: sales@semelab.co.uk SEMELAB A subsidiary of TT electronics plc. Website: http://www.semelab.co.uk Document Number 7861 Issue 2 SILICON PLANAR EPITAXIAL NPN TRANSISTOR SMLBFY90 ELECTRICAL CHARACTERISTICS Parameters ICBO V(BR)CEO* V(BR)CER* h21E Collector Cut Off Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Static Forward Current Transfer Ratio (TA = 25°C unless otherwise stated) Semelab Limited Test Conditions VCB = 15V IC = 10mA IC = 10mA VCE = 1V VCE = 1V IE = 0 IB = 0 RBE ≤ 50Ω IC = 2mA IC = 25mA Min. Typ. Max. 10 Unit. nA 15 V 30 25 20 150 125 - DYNAMIC CHARACTERISTICS Parameters Test Conditions VCE = 5V f = 100MHz VCE = 5V f = 100MHz VCB = 10V f = 1MHz VCE = 5V f = 1MHz VCE = 10V f = 200MHz IC = 2mA IC = 25mA IE = 0 IC = 0 IC = 14mA Min. 0.6 Typ. Max. Unit. fT Transition Frequency GHz 1.0 1.5 0.8 10.0 pF pF dB C22b (1) C12e (2) IS21I2 Output Capacitance Open Circuit Reverse Transfer Capacitance Insertion Gain Mechanical Data Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 2.54 (0.100) Nom. 4 12.7 (0.500) min. 3 2 1 0.48 (0.019) 0.41 (0.016) dia. TO72 (TO-206AF) Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector Pin 4 - Connected to Case Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK. Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7861 Issue 2