2N2857UB_02

2N2857UB Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2857UBJ) • JANTX level (2N2857UBJX) • JANTXV level (2N2857UBJV) • JANS level (2N2857UBJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • Ultra-High frequency transistor • Low power • NPN silicon transistor Features • • • • Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0011 Reference document: MIL-PRF-19500/343 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT TJ TSTG Rating 15 30 3 40 200 1.14 300 1.71 -65 to +200 -65 to +200 Unit Volts Volts Volts mA mW mW/°C mW mW/°C °C °C Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N2857UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO3 ICBO2 ICES IEBO1 Test Conditions IC = 3 mA VCB = 15 Volts VCB = 30 Volts VCB = 15 Volts, TA = 150°C VCE = 16 Volts VEB = 3 Volts Min 15 10 1 1 100 10 Typ Max Units Volts nA µA µA nA µA On Characteristics Parameter DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Collector to Base Feedback Capacitance Collector Base time constant Small Signal Power Gain Noise Figure Symbol |hFE| hFE CCB rb’CC Gpe F Test Conditions VCE = 6 Volts, IC = 5 mA, f = 100 MHz VCE = 6 Volts, IC = 2 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCB = 6 Volts, IE = 2 mA, f = 31.9 MHz VCE = 6 Volts, IE = 1.5 mA, f = 450 MHz VCE = 6 Volts, IC = 1.5 mA, f < 450 MHz, Rg = 50 Ω Symbol hFE1 hFE2 VBEsat VCEsat Test Conditions IC = 3 mA, VCE = 1 Volts IC = 3 mA, VCE = 1 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Min 30 10 Typ Max 150 Units 1.0 0.4 Volts Volts Min 10 50 Typ Max 21 220 1 Units pF ps MHz dB 4 12.5 15 21 4.5 Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com