HFS50N06

HFS50N06 July 2005 BVDSS = 60 V HFS50N06 60V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) = 18 mΩ ID = 30 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 60 30 21 120 ±25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25℃) - Derate above 25℃ 490 30 12 7.0 48 0.32 -55 to +175 300 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 3.1 62.5 ℃/W Units ◎ SEMIHOW REV.A0,July 2005 HFS50N06 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 15 A 2.0 --0.018 4.0 0.022 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150℃ VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 60 ------0.06 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1600 600 90 2100 780 120 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 30 V, ID = 25 A, RG = 25 Ω -------- 15 105 60 65 40 10 17 40 220 130 140 52 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 48 V, ID = 50 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 30 A, VGS = 0 V IS = 50 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------52 75 30 120 1.5 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230uH, IAS=50A, VDD=25V, RG=25Ω, Starting TJ =25°C 3. ISD≤30A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,July 2005 HFS50N06 Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics ID, Drain Current [A] IDR, Reverse Drain Current [A] RDS(ON)[Ω], Drain-Source On-Resistance VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 3000 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 30V Capacitances [pF] 2000 Ciss Coss VGS, Gate-Source Voltage [V] 10 VDS = 48V 8 1500 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 6 4 1000 Crss 500 2 ※ Note : ID = 30 A 0 0 10 20 30 40 50 0 -1 10 10 0 10 1 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,July 2005 HFS50N06 Typical Characteristics (continued) 1.2 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 15 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 30 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 102 100 µs 25 ID, Drain Current [A] ID, Drain Current [A] 102 101 1 ms 10 ms 100 ms DC 20 15 100 10 10-1 * Notes : 1. TC = 25 oC 2. TJ = 175 oC 3. Single Pulse 5 10-2 100 101 0 25 50 75 100 125 150 175 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Zθ JC Thermal Response (t), 10 0 0.2 0.1 0.05 10 -1 ※ Notes : (t) W 1. Zθ JC = 3.1 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) 0.02 0.01 single pulse PDM t1 -3 10 -2 t2 10 0 10 -5 10 -4 10 10 -2 10 -1 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,July 2005 HFS50N06 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,July 2005 HFS50N06 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,July 2005 HFS50N06 Package Dimension TO-220F ±0.20 ± .18 3 0 0.2 ±0.20 2.54±0.20 0.70±0.20 φ 15.87±0.20 3.30±0.20 12.42±0.20 6.68±0.20 2.76±0.20 9.75±0.20 1.47max 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,July 2005