SEMIX201GD066HDS_10

SEMiX201GD066HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 150 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 600 259 196 200 400 -20 ... 20 6 -40 ... 175 284 208 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 1300 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 13 Trench IGBT Modules SEMiX201GD066HDs Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 12.3 0.77 0.37 1600 2.00 Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C 180 55 5 500 55 8 0.23 1.45 1.7 0.9 0.85 2.8 4.3 5.8 0.15 1.85 2.1 1 0.9 4.3 6.0 6.5 0.45 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance VGE=VCE, IC = 3.2 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 300 V IC = 200 A RG on = 3 Ω RG off = 3 Ω GD © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX201GD066HDs Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 3900 A/µs T = 150 °C j VGE = -8 V Tj = 150 °C VCC = 300 V per diode 0.9 0.75 1.5 2.3 min. typ. 1.4 1.4 1 0.85 2.0 2.8 200 32 7.5 max. 1.60 1.6 1.1 0.95 2.5 3.3 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 200 A VGE = 0 V chip VF0 SEMiX® 13 Trench IGBT Modules SEMiX201GD066HDs IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.28 20 K/W nH mΩ mΩ K/W res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 350 Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g Ω K Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance GD 2 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX201GD066HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 16.04.2010 3 SEMiX201GD066HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX201GD066HDs SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 16.04.2010 5