SEMIX402GAR066HDS_08

SEMiX402GAR066HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V Tj = 150 °C VCES ≤ 600 V VGES tpsc Tj = 175 °C Tc = 25 °C Tc = 80 °C 600 509 383 400 800 -20 ... 20 6 -40 ... 175 Tc = 25 °C Tc = 80 °C 543 397 400 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 800 1800 -40 ... 175 Tc = 25 °C Tc = 80 °C 543 397 400 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 800 1800 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s Trench IGBT Modules SEMiX402GAR066HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Tj = 175 °C Typical Applications • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 24.7 1.54 0.73 3200 1.00 1.45 1.70 0.9 0.85 1.4 2.1 5.8 0.15 1.9 2.1 1 0.9 2.3 3.0 6.5 0.45 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Conditions min. typ. max. Unit VGE=VCE, IC = 6.4 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C GAR © by SEMIKRON Rev. 12 – 02.12.2008 1 SEMiX402GAR066HDs Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-c) Rth(j-s) Tj = 25 °C Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 3700 A/µs T = 150 °C j VGE = -8 V Tj = 150 °C VCC = 300 V per diode per diode Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperature sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 0,493 ±5% 3550 ±2% kΩ K res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 °C TC = 125 °C 18 0.7 1 0.045 5 5 250 nH mΩ mΩ K/W Nm Nm Nm g Tj = 25 °C Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 3700 A/µs T = 150 °C j VGE = -8 V Tj = 150 °C VCC = 300 V per diode per diode 0.9 0.75 0.8 1.1 1.4 1.4 1 0.85 1.0 1.4 250 47 10 0.15 1.6 1.6 1.1 0.95 1.3 1.6 0.9 0.75 0.8 1.1 1.4 1.4 1 0.85 1.0 1.4 250 47 10 0.15 1.6 1.6 1.1 0.95 1.3 1.6 Conditions VCC = 300 V IC = 400 A Tj = 150 °C RG on = 4.5 Ω RG off = 4.5 Ω min. typ. 150 125 22 900 65 24 max. Unit ns ns mJ ns ns mJ 0.12 K/W K/W V V V V mΩ mΩ A µC mJ K/W K/W V V V V mΩ mΩ A µC mJ K/W K/W SEMiX 2s Trench IGBT Modules SEMiX402GAR066HDs ® Rth(j-s) Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • Matrix Converter • Resonant Inverter • Current Source Inverter Freewheeling diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance GAR 2 Rev. 12 – 02.12.2008 © by SEMIKRON SEMiX402GAR066HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 12 – 02.12.2008 3 SEMiX402GAR066HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 12 – 02.12.2008 © by SEMIKRON SEMiX402GAR066HDs SEMiX 2s GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 12 – 02.12.2008 5