SKIM270GD128D

SKiM 270GD128D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SKiM® 4 SPT IGBT Modules SKiM 270GD128D Target Data Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Inverse diode Thermal characteristics Temperature Sensor Mechanical data GD 1 28-04-2005 RAA © by SEMIKRON SKiM 270GD128D Fig. 1 Output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic 2 28-04-2005 RAA © by SEMIKRON SKiM 270GD128D Fig. 9 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp/tc = tp * f Fig. 10 Transient thermal impedance of inverse diodes IGBT ZthJC = f (tp); D = tp/tc = tp * f Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE' 3 28-04-2005 RAA © by SEMIKRON SKiM 270GD128D Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 28-04-2005 RAA © by SEMIKRON