SKR9

SKR 8,9 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) It IFSM Tjmax 2 Conditions Tj = 25 °C, IR = 0.05 mA Ts = 80 °C, Tj = 150 °C Tj = 150 °C, 10 ms, sin 180° 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1600 110 9522 1600 1380 150 Unit V A A2s A A °C DIODE IF(DC) = 140 A VRRM = 1600 V Size: 8,9 mm x 8,9 mm Electrical Characteristics Symbol IR VF V(TO) rT Conditions Tj = 25 °C, VRRM Tj = 145 °C, VRRM Tj = 25 °C, IF = 77 A Tj = 125 °C, IF = 77 A Tj = 125 °C Tj = 125 °C Tj = 25 °C, ± 1 A min. typ. max. 0.05 1.1 Unit mA mA V V V mΩ µs 1 0.9 1.21 1.1 0.83 2.2 SKR 8,9 Qu bond trr 26 Thermal Characteristics Features • high current density due to mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes Symbol Tj Tstg Tsolder Tsolder Rth(j-s) Conditions min. -40 -40 typ. max. 150 150 250 320 Unit °C °C °C °C K/W 10 min. 5 min. soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.45 Typical Applications • uncontrolled rectifier bridges Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Conditions Values 8,9 x 8,9 79,21 bondable (Al) solderable (Ag/Ni) Al, diameter ≤ 500 µm wafer frame 181 Unit mm mm2 pcs SKR © by SEMIKRON Rev. 0 – 22.09.2009 1 SKR 8,9 Qu bond This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 Rev. 0 – 22.09.2009 © by SEMIKRON