SKT7

SKT 7,0 Qu RG bond. Absolute Maximum Ratings Symbol VRRM VDRM IT(AV) ITSM i2t Tjmax Conditions Tj = 25 °C, IR = 0.2 mA Tj = 25 °C, ID = 0.2 mA Tc = 80 °C, Tj = 130 °C Tj = 130 °C, 10 ms, sin 180° Tj = 130 °C, 10 ms, sin 180° Values 1600 1600 55 450 1010 130 Unit V V A A A2s °C THYRISTOR IT(DC) = 75 A VRRM = 1600 V Size: 7,0 mm x 7,0 mm Corner gate SKT 7,0 Qu RG bond. Electrical Characteristics Symbol VT VT(TO) rT IGT VGT IGD VGD IH IL Conditions Tj = 130 °C, IT = 45 A Tj = 130 °C Tj = 130 °C Tj = 25 °C Tj = 25 °C Tj = 115 °C Tj = 130 °C Tj = 25 °C Tj = 25 °C min. typ. max. 1.2 0.85 7.9 100 1.98 Unit V V mΩ mA V mA V 6 0.25 165 330 Features • high current density due to double mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes mA mA Dynamic Characteristics Symbol tq (di/dt)cr (dv/dt)cr Conditions Tj = 130 °C Tj = 130 °C Tj = 130 °C min. typ. 150 max. Unit µs Typical Applications* • conrolled rectifier circuits • solid state relays 50 1000 A/µs V/µs Thermal Characteristics Symbol Tj Tstg Tsolder Rth(j-c) Semipack 1 assembly 0.45 Conditions min. -40 -40 typ. max. 130 130 255 Unit °C °C °C K/W Mechanical Characteristics Symbol Raster size Area total Anode Gate and Cathode Wire bond Package Chips / Package Conditions Values 7.0 x 7.0 49 solderable (Ag/Ni) bondable (Al) Al,diameter ≤ 500µm tray 81 Unit mm2 mm2 pcs SKT © by SEMIKRON Rev. 0 – 19.02.2010 1 SKT 7,0 Qu RG bond. This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 0 – 19.02.2010 © by SEMIKRON