BT138-600

SemiWell Semiconductor Bi-Directional Triode Thyristor BT138-600 Symbol ○ 2.T2 Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ Non-isolated Type ◆ ▼ ▲ ○ 3.Gate 1.T1 ○ TO-220 General Description This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 101 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms 12 100/110 50 5.0 Over any 20ms period 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V °C °C g Jan, 2004. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/5 BT138-600 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 15 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ ─ ─ ─ ─ 0.2 10 ─ ─ Typ. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ 15 ─ Max. 2.0 1.65 25 25 25 1.5 1.5 1.5 ─ ─ ─ 1.5 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V mA V V V/㎲ mA °C/W 2/5 BT138-600 Fig 1. Gate Characteristics 10 2 Fig 2. On-State Voltage 10 1 VGM (10V) On-State Current [A] Gate Voltage [V] PGM (5W) PG(AV) (0.5W) 25 ℃ 10 0 10 1 TJ = 125 C o IGM (2A) TJ = 25 C 10 0 o 10 -1 VGD (0.2V) 1 10 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 18 16 125 Fig 4. On State Current vs. Allowable Case Temperature Allowable Case Temperature [ oC] o π θ 360° θ 2π Power Dissipation [W] 14 12 10 8 6 4 2 0 0 θ = 180 o θ = 150 o θ = 120 θ = 90 θ = 60 θ = 30 o o 120 115 θ : Conduction Angle o 110 π θ 360° θ θ = 30 2π o θ = 60 θ = 90 o o o 105 θ : Conduction Angle 100 θ = 120o θ = 150 o θ = 180 9 12 3 6 9 12 15 0 3 6 15 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 120 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 100 Surge On-State Current [A] 80 o 60Hz 60 VGT (25 C) VGT (t C) o 1 40 50Hz 20 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 BT138-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 1 Fig 8. Transient Thermal Impedance 1 I I + GT1 _ GT1 Transient Thermal Impedance [ C/W] IGT (25 C) IGT (t C) o o o 10 0 I _ GT3 0.1 -50 0 50 100 o 150 10 -1 10 -2 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω ▼ ▲ 6V ● ▼ ▲ A ● ▼ ▲ A ● 6V 6V A V ● RG V ● RG V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ 4/5 BT138-600 TO-220 Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 φ E B A H I φ F C M G 1 D 2 3 L 1. T1 2. T2 3. Gate N O J K 5/5