SBP13005

SemiWell Semiconductor SBP13005 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed (Typical 70ns@2.0A) ◆ Minimum Lot-to-Lot hFE Variation ◆ Low VCE(sat) (Typical 180mV@2.0A/0.5A) ◆ Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ ○ 3.Emitter General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-220 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 4.0 8.0 2.0 4.0 75 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 1.67 62.5 Units °C/W °C/W Oct, 2002. Rev. 1 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 SBP13005 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 1.0A IC = 2.0A IC = 4.0A IC = 1.0A IC = 2.0A IC = 1.0A IC = 2.0A IC = 2.0A IB1 = 0.4A T P = 2 5㎲ VCC = 15V IB1 = 0.4A L = 0.35mH VCC = 15V IB1 = 0.4A L = 0.35mH IC = 2.0A IB2 = - 1.0A Vclamp = 300V IC = 2.0A IB2 = - 1.0A Vclamp = 300V TC = 100 °C IB = 0.2A IB = 0.5A IB = 1.0A IB = 0.2A IB = 0.5A VCE = 5V VCE = 5V VCC = 125V IB2 = - 0.4A TC = 100 °C Min - Typ - Max 1.0 5.0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.3 0.5 1.0 1.2 1.6 40 40 V VBE(sat) Base-Emitter Saturation Voltage - - V hFE DC Current Gain Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time 10 8 - ts tf - 2.5 0.15 4.0 0.4 ㎲ ts tf - 1.1 0.07 2.0 0.3 ㎲ ts tf - 1.2 0.08 3.0 0.4 ㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/6 SBP13005 Fig 1. Static Characteristics 6 IB = 1000mA IB = 800mA IB = 600mA IB = 500mA IB = 400mA 3 IB = 300mA IB = 200mA 2 IB = 100mA 45 40 35 Fig 2. DC Current Gain 5 IC, Collector Current [A] hFE, DC Current Gain 4 30 25 20 15 TJ = 125 C TJ = 25 C o o ※ Notes : 10 5 1 IB = 0mA 0 0 1 2 3 4 5 0 0.01 VCE = 5V VCE = 1V 0.1 1 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 10 1.2 1.1 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.1 1 TJ = 25 C o TJ = 125 C o 0.1 TJ = 25 C ※ Note : hFE = 5 o TJ = 125 C ※ Note : hFE = 5 o 0.01 0.1 1 10 1 10 IC, Collector Current [A] IC, Collector Current [A] Fig 5. Resistive Load Fall Time 1000 10 Fig 6. Resistive Load Storage Time TJ = 25 C o TJ = 25 C o ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 t, Time [ns] 100 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 10 t, Time [us] 1 5 0 0 1 2 3 4 1 2 3 4 IC, Collector Current [A] IC, Collector Current [A] 3/6 SBP13005 Fig 7. Safe Operation Areas 5 Fig 8. Reverse Biased Safe Operation Areas ※ Notes : TJ ≤ 100 °C IB1 = 2 A RBB = 0 Ω LC = 0.35mH 10 1 IC, Collector Current [A] IC, Collector Current [A] 10 µs 4 3 10 0 100 µs DC 500 µs 1ms ※ Single Pulse 2 VBE(off) = -9V 10 -1 1 -5V -1.5V 1 -3V 600 700 800 10 -2 10 0 10 10 2 10 3 0 0 100 200 300 400 500 VCE, Collector-Emitter Clamp Voltage [V] VCE, Collector-Emitter Clamp Voltage [V] Fig 9. Power Derating Curve 125 Power Derating Factor (%) 100 75 50 25 0 0 50 100 150 o 200 TC, Case Temperature ( C) 4/6 SBP13005 Inductive Load Switching & RBSOA Test Circuit LC IB1 IC IB VCE D.U.T RBB VBE(off) VClamp VCC Resistive Load Switching Test Circuit RC IB1 IC IB VCE D.U.T RBB VBE(off) VCC 5/6 SBP13005 TO-220 Package Dimension Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 mm Typ. Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Inch Typ. Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.42 0.45 0.7 3.6 3.4 1.4 2.7 5.15 2.6 1.62 0.6 0.9 0.118 0.049 0.094 0.197 0.087 0.056 0.018 0.027 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.064 0.024 0.035 0.142 φ E B A H I φ F C M G 1 D 2 3 L 1. Base 2. Collector 3. Emitter N O J K 6/6