SIM200D12SV3

Preliminary SIM200D12SV3 VCES = 1200V Ic = 200A VCE(ON) typ. = 1.7V @ Ic = 200A “HALF-BRIDGE” IGBT MODULE Features ▪Trench gate + field stopper, using Infineon chip design ▪ 10µs Short circuit capability ▪ Low turn-off losses ▪ Short tail current for over 18KHz ▪ Positive VCE(on) temperature coefficient Applications ▪ AC & DC Motor controls ▪ VVVF inverters ▪ Optimized for high frequency inverter Type Welding machines ▪ SMPS ▪ UPS, Robotics Package : V3 Absolute Maximum Ratings @ Tj=25℃ (per leg) Symbol VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 VGE = 0V, Condition IC = 1.0mA Ratings 1200 ± 20 Unit V V A A A A µs V ℃ ℃ g Nm Nm TC = 80℃(25℃) TC = 25℃ TC = 80℃(25℃) Tc=25℃ 200(260) 400 200(260) 400 10 AC 1 minute 2500 -40 ~ 150 -40 ~ 125 360 3.5 3.5 Electrical Characteristics @ Tj = 25℃ (unless otherwise specified) Symbol V(BR)CES VCE(ON) VGE(th) ICES IGES Parameters Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min 1200 1.4 5.0 - Typ 1.7 5.8 - Max 2.15 6.5 1.0 ± 200 Unit Test conditions VGE = 0V, IC = 1.0mA V IC = 200A, VGE = 15V VCE = VGE, IC = 500µA VCE = 1200V VGE = ± 20V mA nA VGE = 0V, VCE = 0V, -1- Preliminary VFM Diode Forward Voltage Drop 1.65 SIM200D12SV3 2.15 V IC = 200A Switching Characteristic @ Tj = 25℃ (unless otherwise specified) Symbol Cies Coss Cres Parameters Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode Peak Reverse Recovery current Diode Reverse Recovery time Min - Typ 17306 810 360 300 108 660 156 160 250 Max - Unit Test conditions VCC = 30V, f = 1.0MHz VGE = 0V pF td(on) tr td(off) tf Irr trr Tj = 125℃, VCC = 600V ns IC = 200A, RG = 3.6Ω VGE = 15V A ns Tj = 125℃, VCC = 600V IF = 200A, VGE = 15V RG = 3.6Ω, di/dt=1200A/us Thermal Characteristic Values Symbol RΘJC RΘJC RΘCS Parameters Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.04 Max 0.10 0.20 - Unit ℃/W -2- Preliminary SIM200D12SV3 Fig 1. Maximum DC Collector Current vs. Case Temperature Fig 2. Power Dissipation vs. Case Temperature Fig 3. Typ. IGBT Output Characteristics TJ = 25℃; tp = 80µs Fig 4. Typ. IGBT Output Characteristics TJ = 125℃; tp = 80µs -3- Preliminary SIM200D12SV3 Fig 5. Typ. Diode Forward Characteristics tp = 80µs Fig 6. Typ. Transfer Characteristics VCE = 50V; tp = 10µs Fig 7. Typical VCE vs. VGE TJ = 25℃ Fig 8. Typical VCE vs. VGE TJ = 125℃ -4- Preliminary SIM200D12SV3 Fig 9. Typ. Capacitance vs. VCE VGE = 0V; f = 1Mhz Fig 10. Typical Gate Charge vs. VGE ICE = 120A; L = 600µH Fig 11. Typ. Switching Time vs. IC TJ = 125℃; L = 200µH; VCE = 600V RG = 3.9Ω; VGE = 15V Fig 12. Typ. Switching Time vs. RG TJ = 125℃; L = 200µH; VCE = 600V ICE = 200A; VGE = 15V -5- Preliminary SIM200D12SV3 Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT) Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE) -6- Preliminary SIM200D12SV3 Package Outline (dimensions in mm) OCT., 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing Marketing: clzhang@semiwell.com Sales: sales@semiwell.com Web-site: WWW. Semiwell.com -7-