W30M40CT

PROVISIONAL SemiWell Semiconductor W30M40CT Symbol 30A Schottky Barrier Rectifier Features 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection Lead solderable per MIL-STD202,method 208 guaranteed Lead temperature for soldering purpose 250°C Max for 10 second Weight : 5.6 gram (approximately) b : ! 2 3! b : TO-247 General Description The W30M40CT schottky Rectifier has been designed for applcations requiring low forward voltage drop and switching power supply, dc-dc converter, free-wheeling diode, battery charging, polarity protection application. 1 2 3 Absolute Maximum Ratings Symbol VRRM VR IF(AV) IFSM Eas TJ TSTG Parameter Repetitive Peak Reverse Voltage Maximum DC Reverse Voltage Average Forward Current @ TC = 100°C Per Diode Total Device Value 40 40 15 30 275 17.5 - 65 ~ 125 - 65 ~ 150 Units V V A A A mJ °C °C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions half sinewave,single phase, 60Hz) Non-Repetitive Avalanche Energy @ TC=25°C , Vdd = 15V , L=18uH Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction-to-Case ( per diode ) Value 1.5 Units °C/W Nov, 2002. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/3 W30M40CT Electrical Characteristics Symbol Reverse Leakage Current IR VR = VRRM TC = 25 °C TC = 125 °C - Parameter Min Typ - Max 1 50 Units mA Forward Voltage Drop IF = IF = IF = IF = 15 A 15 A 30 A 30 A TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.50 0.45 0.60 0.55 VF - - V CT Typical Junction Capacitance @ fT=1MHZ , VR=4V , Tj =25 750 PF 2/3 W30M40CT Fig 1. VF-IF Characteristic 100 100 Fig 2. VR-IR Characteristic Reverse Current, IR[mA] TJ=10010 Forward Current, IF[A] 10 TJ=125- 1 TJ=75- 1 TJ=25- 0.1 TJ=25- 0.1 0.2 0.4 0.6 0.8 0.01 0 8 16 24 32 40 48 56 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Fig 3. Typical Junctiion Capacitance Fig 4. Forward Current derating Curve Average forward Current, IF(AV)[A] Junction capacitance, CJ[pF] 6 . Notes 1. TJ = 252. F = 1MHz 3. Vsig = 50mVP-P 32 28 24 20 16 12 8 4 0 1000 100 0.1 1 10 0 25 50 75 100 125 150 Reverse Voltage, VR[V] Case Temperature, TC[-] Fig 5. Maximum non-Repetitive forward Surge current per diode 300 Peak Forward Surge Current, IFSM[A] 250 200 150 100 50 0 1 10 100 Reverse Voltage, VR[V] 3/3