ECLAMP2396P

ESD/EMI Protection for Color LCD Interfaces PROTECTION PROTECTION PRODUCTS - EMIClampTM Description The EClampTM2396P is a (L-C) low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge (ESD) protection in portable electronic equipment. This state-of-the-art device utilizes solidstate silicon-avalanche technology for superior clamping performance and DC electrical characteristics. They have been optimized for protection of color LCD and camera lines in cellular phones and other portable electronics. The device consists of six identical circuits comprised of TVS diodes for ESD protection, and a 5-pole inductor - capacitor network for EMI/RFI filtering. A typical inductor value of 19nH and a capacitor value of 12pF are used to achieve 30dB minimum attenuation from 800MHz to 2.7GHz. The TVS diodes provide effective suppression of ESD voltages in excess of ±15kV (air discharge) and ±8kV (contact discharge) per IEC 61000-4-2, level 4. The EClamp2396P is in a 12-pin, RoHS/WEEE compliant, SLP3016P12 package. It measures 3.0 x 1.6 x 0.58mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPd. The small package makes it ideal for use in portable electronics such as cell phones, digital still cameras, and PDAs. EClamp2396P PRELIMINARY Features Bidirectional EMI/RFI filter with integrated TVS for ESD protection ESD protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) Filter performance: 30dB minimum attenuation 800MHz to 2.7GHz T VS working voltage: 5V Inductor: 19nH (Typical) Capacitance: 12pF (Typical at VR = 2.5V) Protection and filtering for six lines Solid-state technology Mechanical Characteristics SLP3016P12 12-pin package RoHS/WEEE Compliant Nominal Dimensions: 3.0 x 1.6 x 0.58 mm Lead Pitch: 0.5mm Lead finish: NiPd Marking: Marking Code Packaging: Tape and Reel per EIA 481 Applications Color LCD Protection Cell Phone CCD Camera Lines Clamshell Cell Phones Circuit Diagram (Each Line) Package Configuration 3.00 12 L1 L2 IN C1 C2 C3 OUT 1.60 0.50 BSC GND 0.58 Device Schematic (6X) Revision 2/23/2006 12 Pin SLP package (Bottom Side View) Nominal Dimensions in mm 1 www.semtech.com EClamp2396P PROTECTION PRODUCTS Maximum Ratings R ating ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Junction Temp erature Op erating Temp erature Storage Temp erature Symbol VESD TJ Top TSTG Value +/- 20 +/- 15 125 -40 to +85 -55 to +150 PRELIMINARY Units kV o C C C o o Electrical Characteristics (T=25oC) P a r a met er T VS Reverse Stand-Of f Voltage T VS Reverse Breakdown Voltage T VS Reverse Leakage Current DC Resistance Filter Cut-Of f Frequency Inductance Total Series Inductance Capacitance Total Capacitance Symb ol VRWM VBR IR RDC fc L L1 + L2 C1 , C2 , C3 C1 + C2 + C3 C on d i t i on s Mi n i mu m Ty p i c a l M a xi m u m 5 Un i ts V V µA Ohms MHz nH nH It = 1mA VRWM = 3.3V 6 8 10 0.1 18 ZSource = ZLoad = 50 Ohms 150 19 Each Line VR = 2.5V, f = 1MHz Input to Gnd, Each Line VR = 2.5V, f = 1MHz 10 30 38 12 36 15 45 pF pF  2006 Semtech Corp. 2 www.semtech.com EClamp2396P PROTECTION PRODUCTS Typical Characteristics Typical Insertion Loss S21 (Each Line) CH1 S21 LOG 6 dB / REF 0 dB 1: -34.514 dB 800 MHz 2: -34.025 dB 1.8 GHz 3: -30.343 dB 3 GHz PRELIMINARY Analog Crosstalk (Each Line) CH1 S21 LOG 20 dB / EF 0 dB R 0 dB -6 dB -12 dB -18 dB -24 dB -30 dB -36 dB -42 dB -48 dB -54 dB 1 MHz START . 030 MHz 10 MHz 100 MHz 1 2 3 3 1 GHz GHz STOP 3000. 000000 MHz START . 030 MHz STOP 3000. 000000 M Hz ESD Clamping (+8kV Contact) ESD Clamping (-8kV Contact) Note: Data is taken with a 10x attenuator Note: Data is taken with a 10x attenuator Capacitance vs. Reverse Voltage (Normalized to 2.5 volts) 2 1.5 CJ(VR) / CJ(VR=0) 1 0.5 f = 1 MHz 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Reverse Voltage - VR (V)  2006 Semtech Corp. 3 www.semtech.com EClamp2396P PROTECTION PRODUCTS Device Connection The EClamp2396P is comprised of six identical circuits each consisting of a low pass filter for EMI/RFI suppression and dual TVS diodes for ESD protection. The device is in a 12-pin SLP package. Electrical connection is made to the 12 pins located at the bottom of the device. A center tab serves as the ground connection. The device has a flow through design for easy layout. Pin connections are noted in Figure 1. All path lengths should be kept as short as possible to minimize the effects of parasitic inductance in the board traces. Recommendations for the ground connection are given below. Ground Connection Recommendation Parasitic inductance present in the board layout will affect the filtering performance of the device. As frequency increases, the effect of the inductance becomes more dominant. This effect is given by Equation 1. Equation 1: The Impedance of an Inductor at Frequency XLF Figure 1 - Pin Identification and Configuration (Top Side View) PRELIMINARY In 1 In 2 In 3 In 4 In 5 In 6 Pin 1-6 7 - 12 Center Tab 1 12 GND 6 7 Out 1 Out 2 Out 3 Out 4 Out 5 Out 6 Identification Inp ut Lines Outp ut Lines Ground XLF(L, f ) = 2 * π * f * L Where: L= Inductance (H) f = Frequency (Hz) Via connections to the ground plane form rectangular wire loops or ground loop inductance as shown in Figure 2. Ground loop inductance can be reduced by using multiple vias to make the connection to the ground plane. Bringing the ground plane closer to the signal layer (preferably the next layer) also reduces ground loop inductance. Multiple vias in the device ground pad will result in a lower inductive ground loop over two exterior vias. Vias with a diameter d are separated by a distance y run between layers separated by a distance x. The inductance of the loop path is given by Equation 2. Thus, decreasing distance x and y will reduce the loop inductance and result in better high frequency filter characteristics. Figure 2 - Inductance of Rectangular Wire Loops Ground Via 1 x Ground Via 2 d Signal Layer y Ground Layer Layer Equation 2: Inductance of Rectangular Wire Loop LRECT(d, x , y) = 10.16 *10 −9 * x * ln Where: d = Diameter of the wire (in) x = Length of wire loop (in) y = Breath of wire loop (in) [ [ ] + y * ln[ ]] 2*y d 2*x d  2006 Semtech Corp. 4 www.semtech.com EClamp2396P PROTECTION PRODUCTS Applications Information Figure 3 shows the recommended device layout. The ground pad vias have a diameter of 0.008 inches (0.20 mm) while the two external vias have a diameter of 0.010 inches (0.250mm). The internal vias are spaced approximately evenly from the center of the pad. The designer may choose to use more vias with a smaller diameter (such as 0.005 inches or 0.125mm) since changing the diameter of the via will result in little change in inductance (i.e. the log function in Equation 2 in highly insensitive to parameter d) . Figure 4 shows a typical insertion loss (S21) plot for the device using Semtech’s filter evaluation board with 50 Ohm traces and the recommended via configuration. Figure 3 - Recommended Layout Using Ground Vias PRELIMINARY Figure 4 - Filter Characteristics Using Recommended Layout with Internal Vias CH1 S21 LOG 6 dB / REF 0 dB 1: -4.1029dB 150 MHz 4 0 dB -6 dB -12 dB -18 dB -24 dB -30 dB -36 dB -42 dB -48 dB -54 dB 1 MHz START . 030 MHz 10 MHz 2: -34.337 dB 800 MHz 3: -37.930 dB 1.8 GHz 4: -34.395 dB 2.5 GHz 1 2 3 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz  2006 Semtech Corp. 5 www.semtech.com EClamp2396P PROTECTION PRODUCTS Applications Information - Spice Model EClamp2396P Spice Model & Parameters PRELIMINARY Line In 0.7nH L 38nH 0.7nH Line Out Figure 1 - EClamp2396P Spice Model Table 1 - EClamp2396P Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm Amp Farad sec --eV D1 (T VS) 4.09E-15 7.435 0.743 0.584 1E-3 31.3E-12 2.541E-9 0.23 1.1 1.11 D2 (T VS) 4.09E-15 7.435 0.743 0.584 1E-3 31.3E-12 2.541E-9 0.23 1.1 1.11  2006 Semtech Corp. 6 www.semtech.com EClamp2396P PROTECTION PRODUCTS Outline Drawing - SLP3016P12 PRELIMINARY A D B DIM PIN 1 INDICATOR (LASER MARK) E A aaa C A2 D1 1 E1 N e D/2 2 LxN E/2 A1 C SEATING PLANE A A1 A2 b D D1 E E1 e L N aaa bbb .020 .023 .026 .000 .001 .002 (.006) .007 .010 .012 .114 .118 .122 .083 .087 .091 .059 .063 .067 .010 .016 .020 .020 BSC .011 .013 .015 12 .003 .004 DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX 0.50 0.58 0.65 0.00 .003 0.05 (0.15) 0.20 0.25 0.30 2.90 3.00 3.10 2.10 2.20 2.30 1.50 1.60 1.70 0.25 0.40 0.50 0.50 BSC 0.28 0.33 0.38 12 0.08 0.10 bxN bbb CAB NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP3016P12 P X DIM B C F G P X Y Z DIMENSIONS INCHES MILLIMETERS .091 2.30 .060 1.52 .018 0.45 .035 0.89 .020 0.50 .012 0.30 .025 0.63 .085 2.15 Z G F (C) Y B NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET  2006 Semtech Corp. 7 www.semtech.com EClamp2396P PROTECTION PRODUCTS Marking PRELIMINARY Ordering Information Part Number Qty per Reel 3000 R eel Size 7 Inch PIN 1 INDICATOR (LASER MARK) 2396P EClamp 2396P.TCT EMIClamp and EClamp are marks of Semtech Corporation Tape and Reel Specification Pin 1 Location User Direction of feed Device Orientation in Tape A0 1.78 +/-0.05 mm B0 3.18 +/-0.05 mm K0 0.76 +/-0.05 mm Tape Width B, (Max) D 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000) D1 E 1.750±.10 mm (.069±.004) F K (MAX) P 4.0±0.1 mm (.157±.004) P0 4.0±0.1 mm (.157±.004) P2 T(MAX) W 8.0 mm + 0.3 mm - 0.1 mm (.312±.012) 8 mm 4.2 mm (.165) 0.8 mm ±0.05 (.031) 3.5±0.05 mm (.138±.002) 2.4 mm (.094) 2.0±0.05mm (.079±.002) 0.4 mm (.016) Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804  2006 Semtech Corp. 8 www.semtech.com