BA159

BA157 THRU BA159 FAST SILICON RECTIFIERS Reverse Voltage – 400 to 1000 Volts Forward Current – 1.0 Ampere Features •Low forward voltage •High current capability •Low leakage current •High surge capability •Low cost Absolute Maximum Ratings (Ta = 25oC) Symbol Repetitive Peak Reverse Voltage BA157 BA158 BA159 o Value 400 600 1000 1 1) Unit V V V A A O O VRRM VRRM VRRM Io o Average Rectified Current at Tamb=50 C Surge Forward Current, Half Cycle 50Hz, starting from Tj=25 C Junction Temperature Operating and Storage Temperature Range 1) IFSM Tj TS 35 125 -65 to +125 C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003 BA157 THRU BA159 FAST SILICON RECTIFIERS Characteristics at Tj=25oC Symbol Forward Voltage at IF=1A, Tj=25oC Leakage Current at VRRM, Tamb=25oC Capacitance at f=1MHz ,VR=4V VR=4V VR=4V Reverse Recovery Time IF=10mA, IR=10mA IRR=1mA Reverse Recovery Time IF=0.5A, IR=1A IRR=0.25A BA157 BA158 BA159 BA157 BA158 BA159 BA157 BA158 BA159 Ctot Ctot Ctot trr trr trr trr trr trr RthA 15 15 15 300 300 500 150 150 250 251) pF pF pF ns ns ns ns ns ns K/W VF IR 1.3 5 V μA Min. Typ. Max. Unit Thermal Resistance Junction to Ambient Air 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003 BA157 THRU BA159 FAST SILICON RECTIFIERS FIG.1-FORWARD CURRENT DERATING CURVE 1.0 AVERAGE FORWARD CURRENT AMPERES PEAK FORWARD CURRENT AMPERES Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 35 0.8 0.6 0.4 25 TJ =55 C 8.3ms Single Half Sine-Wave o 15 0.2 5 0 0 25 50 75 100 125 150 175 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 AMBIENT TEMPERATURE, (o C) Fig.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 INSTANTANEOUS FORWARD CURRENT AMPERES 1 Tj=25 C Pulse Width=300 S 1% Duty Cycle o 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE VOLTS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003 BA157 THRU BA159 FAST SILICON RECTIFIERS Fig.4- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES Fig.5- TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE,pF 100 Tj=25 C f=1.0MHz Vsig=50mVp-p o 10 TJ =100 oC 1 10 0.1 TJ =25 C o 0.01 0 20 40 60 80 100 0 0.1 1 10 100 REVERSE VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/W 100 o 10 1 0.1 0.01 0.1 1 10 100 t, PULSE DURATION,sec. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003