BC212

BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Symbol hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) -VBE(on) fT CCBO Value 60 50 5 300 625 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 µA at -VCE = 5 V, -IC = 2 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz Min. 40 60 60 50 5 0.6 200 Max. 300 15 15 0.6 1.1 0.72 10 Unit nA nA V V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007