SSC-MWT833N

`*Customer : SPECIFICATION (PRELIMINARY) ITEM MODEL PART NO. TOP LED DEVICE SSC-MWT833N REV4.0(050811) [Contents] 1. Features -------------------------------------------------------------------------- 2 2. Absolute Maximum Ratings ------------------------------------------------- 2 3. Electro-optical Characteristics ----------------------------------------------- 2 4. CIE Chromaticity Diagram ------------------------------------------------- 3 5. Characteristic Diagram -------------------------------------------------------- 4 6. Soldering Profile --------------------------------------------------------------- 5 7. Outline Dimensions And Materials -------------------------------------- 6 8. Reel Dimensions --------------------------------------------------------------- 7 9. Reel Packing Structure ------------------------------------------------------ 8 10. Lot Number -------------------------------------------------------------------- 9 11. Precaution for Use ------------------------------------------------------------ 10 12. Reliability --------------------------------------------------------------- 11 Drawn by Checked by Approved by SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 1/11- 1.Features White colored SMT package Suitable for all SMT assembly methods ; Suitable for all soldering methods Applications : • Mobile Handset • Illumination 2. Absolute Maximum Ratings*1 Parameter Power Dissipation Forward Current Peak Forward Current (per die) LED Junction Temperature Operating Temperature Storage Temperature Symbol Pd IF IFM Tj Topr Tstg *2 (Ta=25ºC) Value 420 120 120 125 -30 ~ +85 -40 ~ +100 Unit mW mA mA ºC ºC ºC *1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product. *2 IFM conditions is Pulse width Tw≤ 300ms, Duty ratio≤ 1/10. 3. Electro-Optical Characteristics Parameter Forward Voltage (per circuit) Reverse Current (per circuit) Luminous Intensity*1 Peak Luminous Intensity vs. Drive Current*2 Illumination*3 Viewing Angle *4 Chromaticity Coordinates Symbol VF IR IV IV lx 2θ 1/2 X Y Condition IF = 40 mA VR = 5V IF = 80 mA IF = 100 mA IF = 400 mA IF = 80 mA IF = 100 mA IF = 80 mA IF = 80 mA IF = 80 mA Min 2.7 Typ 3.2 3.2 4.2 7 14 18 120 0.31 0.31 3.7 (Ta=25ºC) Max 200 Unit V µA cd cd lux deg. - *1. The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ± 10%. *2. IFM conditions is Pulse width Tw≤ 300ms, Duty ratio≤ 1/10 *3. This luminous intensity (Lux) is measured at a distance of 0.5m with condition Ta=25℃ and it has 10% tolerance. *4.θ 1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. Note : All measurements were made under the standardized environment of SSC. SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 2/11- 4. CIE Chromaticity Diagram ICI Chromaticity Diagram 0.9 0.8 0.7 0.6 0.5 Y 0.4 d 0.3 a b c 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 X BIN A B C D x y x y x y x y 0.271 0.284 0.283 0.305 0.287 0.295 0.330 0.360 LIMITS (Chromaticity Coordinates) 0.285 0.296 0.259 0.276 0.287 0.330 0.295 0.339 0.296 0.330 0.276 0.318 0.330 0.344 0.318 0.335 0.283 0.305 0.330 0.360 0.330 0.339 0.346 0.374 *Color Coordinates Measurement allowance is ±0.001 SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 3/11- 5. Characteristic Diagram ◎ Forward Voltage vs. Forward Current (per die) 3.4 ◎ Forward Current vs. Relative Intensity 140 120 3.2 Forward Voltage VF [V] 100 Relative intensity[%] 80 60 40 20 0 3.0 2.8 2.6 0 5 10 15 20 25 30 0 10 20 30 40 50 60 70 80 90 100 110 120 Forward Current IF [mA] Forward Current IF [mA] ◎ Ambient Temperature vs. Allowable Forward Current 35 ◎ Radiation Diagram 0 -30 30 30 Forward current IF (mA) 25 20 15 10 -60 60 -90 90 5 0 -25 0 25 50 75 100 Ambient temperature Ta(? ) ◎ Spectrum 1.0 55 50 ◎ Forward Current vs. Illumination d=50 cm 0.8 Normalized Intensity 45 40 0.6 Illumination (lux) 35 30 25 20 15 10 0.4 0.2 d=100cm 0.0 5 400 500 600 700 0 Wavelength(nm) 0 50 100 150 200 250 300 350 400 450 Forward Current (mA) SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 4/11- 6. Soldering Profile The LED can be soldered in place using the reflow soldering method. (1) Lead solder Preliminary heating to be at maximum 210°C for maximum 2 minutes. Soldering heat to be at maximum 240°C for maximum 10 seconds. 280 Device Surface Temperature [ C] 240 200 160 120 80 40 0 o 0 15 30 45 60 75 90 105 120 135 150 165 180 195 (2) Lead-free solder Soldering Times [sec] Preliminary heating to be at maximum 220°C for maximum 2 minutes. Soldering heat to be at maximum 260°C for maximum 10 seconds. 280 Device Surface Temperature [ C] 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 135 150 165 180 195 o Soldering Times [sec] (3) Hand Soldering conditions Not more than 5 seconds @MAX300°C, under Soldering iron. Note : In case that the soldered products are reused in soldering process, we don’t guarantee the products SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 5/11- 7. Outline Dimensions And Materials Packing M ark (Anode) 1 3.5 4 1.30 Anode 1 4 Cathode 3.8±0.1 30° 2.5 3.5 2.1 2.4 C athode 1.0 0.8 1.0 2 3 Anode 2 3 [Circuit diagram ] ( Tolerance: ±0.2, Unit: ㎜ ) *MATERIALS PARTS Package Encapsulationg Resin Electrodes MATERIALS Heat-Resistant Polymer Mold Resin(with Phosphor) Ag Plating Copper Alloy SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 6/11- 8. Reel Dimensions 1.5 +0.1 -0 1.75±0.1 4.0±0.1 2.0±0.05 0.25±0.05 5.5±0.05 12.0±0.3 (4.75) 4.2±0.1 MA X.5 1.7±0.1 8±0.1 3.8±0.1 1.6±0.1 * Because cathode mark does not mean the polarity indication, even if the place of cathode mark is changed, electric character is not changed. 180 15.4±1.0 13±0.3 2 22 13 (1) Quantity : 1000 pcs/Reel (2) Cumulative Tolerance: Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape : Adhesion strength to be 0.1 – 0.7N when the cover tape is turned off from the carrier at 10˚ angle to be the carrier tape. (4) Package:P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof Package. 60 SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 7/11- 9. Reel Packing Structure SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 8/11- 10. Lot Number The lot number is composed of the following characters; MWT○○□□◎◎ ○○ – Year ( 01 for 2001, 02 for 2002, 03 for 2003 ) □□ – Month ( 01 for Jan., 02 for Feb.,‥‥‥11 for Nov., 12 for Dec.) ◎◎ – Day ( 01, 02, 03, 04, ‥‥‥‥‥‥28, 29, 30, 31.) RANK : QUANTITY : XXXX XXX LOT NUM BER : XXXXXXXXXX PART NUM BER : SSCM W T833N SEO UL SEM ICO NDU CTOR CO., LTD. SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 9/11- 11. Precaution for use (1) Storage In order to avoid the absorption of moisture, it is recommended to store in a dry box (or a desiccator) with a desiccant. Otherwise, to store them in the following environment is recommended. Temperature : 5℃~30℃ (2) Attention after open. LED is correspond to SMD, when LED be soldered dip, interfacial separation may affect the light transmission efficiency, causing the light intensity to drop. Attention in followed; a. After opened and mounted the soldering shall be quickly. b. Keeping of a fraction Temperature : 5 ~ 40℃ Humidity : less than 30% (3) In the case of more than 1 week passed after opening or change color of indicator on desiccant, components shall be dried 10-12hr. at 60±5℃. (4) In the case of that the components is humided, the components shall be dried; 24Hr at 80±5℃ or 12Hr at 100±5℃. (5) Any mechanical force or any excess vibration shall not be accepted to apply during cooling process to normal temperature after soldering. (6) Quick cooling shall be avoided. (7) Components shall not be mounted on warped direction of PCB. (8) Anti radioactive ray design is not considered for the products. (9) This device should not be used in any type of fluid such as water, oil, organic solvent etc. When washing is required, IPA should be used. (10) When the LEDs are illuminating, operating current should be decided after considering the ambient maximum temperature. (11) LEDs must be stored to maintain a clean atmosphere. If the LEDs are stored for 3 months or more after being shipped from SSC, a sealed container with a nitrogen atmosphere should be used for storage. (12) The LEDs must be soldered within seven days after opening the moisture-proof packing. (13) Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place. (14) The appearance and specifications of the product may be modified for improvement without notice. Humidity : maximum 65%HR SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 10/11- 12. RELIABILITY (1) TEST ITEMS AND RESULTS TEST ITEM Resistance to Soldering Heat*1 Solderability*1 Thermal Shock*1 High Temperature Storage Humidity Heat Load Low Temperature Storage Steady State Life Test High Humidity Heat Life Test Low Temperature Life Test Pulse Life Test *1 Test conditions Tsld = 260℃, 10 sec. Tsld = 215±5℃, 5 sec. -30℃ (30 min) ~ 85℃(30 min) Transfer 5 min Ta = 100℃ Ta = 85℃, RH = 85% Ta = -40℃ Ta = 25℃, IF = 25 mA/die Ta = 85℃, RH = 85%, IF = 10 mA/die Ta = -30℃, IF = 25 mA/die Ta = 50℃, RH = 95% On=2 sec, Off=2 sec(100,000cycle) Test Point 1 Time 1 Time 100 cycles 0 hrs-1000 hrs. 0 hrs-1000 hrs. 0 hrs-1000 hrs. 0 hrs-100 hrs200 hrs-300 hrs 0 hrs-100 hrs200 hrs-300 hrs 0 hrs-100 hrs200 hrs-300 hrs 0 cycle 100,000 cycle Number of Damaged 0 /22 0 /22 0 /22 0 /22 0 /22 0 /22 0 /22 0 /22 0 /22 0 /22 Faulty decision of this test item is made by On / Off after the test. (2) CRITERIA FOR JUDGING THE DAMAGE Item Forward Voltage Reverse Current Luminous Intensity Symbol VF IR IV Test Condition IF = 20 mA/die VR = 5 V/die IF = 20 mA/die Criteria for Judgement Min. L.S.L×0.5 Max. U.S.L×1.2 U.S.L×2.0 - U.S.L. : Upper Standard Level L.S.L. : Lower Standard Level (3)ESD guarantee condition Item HBM Test Condition 1000 V Criteria for Judgement IR =100 ㎂ and below Test Form CONTACT SSC-QP-0401-06(REV4.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-MWT833N - 11/11-