SGM2358YS

SGM2358 PRODUCT DESCRIPTION The SGM2358 has dual rail-to-rail output voltage feedback amplifiers in one package. It takes the minimum operating supply voltage down to 3V and the maximum recommended supply voltage is 5.5 V. SGM2358 is specified over the extended -40°C to +85°C temperature range. The amplifier in SGM2358 provides 1MHz bandwidth, Very low input bias currents of 10pA, these features enable SGM2358 to be used for integrators, photodiode amplifiers, and piezoelectric sensors. Rail-to-rail output feature is useful for designers to buffer ASIC in single-supply systems. Applications of SGM2358 include safety monitoring, portable equipment, battery and power supply control, signal conditioning and interfacing for transducers in low power systems. The SGM2358 comes in SO-8 package. 1MHz, General Purpose CMOS Operational Amplifier FEATURES • Low Cost • Rail-to-Rail Output 1.7mV Typical VOS • Unity Gain Stable • Gain Bandwidth Product: 1MHz • Very Low Input Bias Currents: 10pA • Input Common-Mode Voltage Range Includes Ground • Operates from 3 V to 5.5 V • Small Packaging: SO-8 APPLICATIONS ASIC Input or Output Amplifier Sensor Interface Piezo Electric Transducer Amplifier Medical Instrumentation Mobile Communication Portable Systems Smoke Detectors Notebook PC PCMCIA cards Battery –Powered equipment DSP interface PIN CONFIGURATION (Top View) SGM2358 OUT A 1 -INA 2 +INA 3 -VS 4 8 7 +VS OUT B 6 -INB 5 +INB SO-8 Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com REV. B ELECTRICAL CHARACTERISTICS : VS = +5V (At RL = 100kΩ connected to Vs/2, and VOUT = Vs/2, unless otherwise noted) SGM2358 PARAMETER CONDITION TYP +25℃ INPUT CHARACTERISTICS Input Offset Voltage (VOS) Input Bias Current (IB) Input Offset Current (IOS) Common-Mode Rejection Ratio(CMRR) Open-Loop Voltage Gain( AOL) Input Offset Voltage Drift (∆VOS/∆T) OUTPUT CHARACTERISTICS Output Voltage Swing from Rail Output Current (IOUT) POWER SUPPLY 3.0 5.5 Power Supply Rejection Ratio (PSRR) Quiescent Current / Amplifier (IQ) DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) Slew Rate (SR) Settling Time to 0.1%( tS) Overload Recovery Time Crosstalk G = +1 , 2V Output Step G = +1, 2 V Output Step VIN ·Gain = Vs 1KHz 1MHz NOISE PERFORMANCE Voltage Noise Density (en) f = 1kHz f = 10kHz 42 38 nV/ nV/ Hz Hz MIN/MAX OVER TEMPERATURE +25℃ -40℃ to +85℃ UNITS MIN / MAX 1.7 10 10 VS = 5V, VCM = - 0.1V to 3.3 V RL = 2KΩ ,Vo = 0.1V to 4.9V RL =10KΩ ,Vo = 0.035V to 4.965V 88 100 110 3.5 7 7.5 mV pA pA MAX TYP TYP MIN MIN MIN TYP 70 85 100 65 70 90 dB dB dB µV/℃ RL = 2KΩ RL = 10KΩ 0.8 0.008 43 35 30 V V mA TYP TYP MIN Operating Voltage Range Vs = +3 V to + 5.5 V VCM = (-VS) + 0.5V IOUT = 0 CL = 100pF 1.0 0.65 9.0 4.0 -80 -65 80 0.4 3.0 5.5 65 1 V V dB mA MIN MAX MIN MAX 70 0.95 MHz V/µs µs µs dB dB TYP TYP TYP TYP TYP TYP TYP TYP Specifications subject to change without notice. ２ SGM2358 PACKAGE/ORDERING INFORMATION MODEL SGM2358 ORDER NUMBER SGM2358YS/TR PACKAGE DESCRIPTION SO-8 SPECIFIED TEMPERATURE RANGE -40°C to +85°C PACKAGE OPTION Tape and Reel, 2500 MARKING INFORMATION SGM2358YS ABSOLUTE MAXIMUM RATINGS Supply Voltage, V+ to V- . . . . . . . . . . . . . . . . . . . . . 6.0 V Storage Temperature Range . . . . . . . . .–65℃ to +150℃ Junction Temperature . . . . . . . . . . . . . . . .. . . . . . . .160℃ Operating Temperature Range . .. . . . . . -40℃ to +85℃ Package Thermal Resistance @ TA = 25℃ SO-8, θJA......................................................................125℃/W Lead Temperature Range (Soldering 10 sec) .....................................................260℃ ESD Susceptibility HBM................................................................................4000V MM....................................................................................300V CAUTION This integrated circuit can be damaged by ESD. Shengbang Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. NOTES 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ３ SGM2358 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100kΩ connected to Vs/2,unless otherwise noted. Small-Signal Step Response G = +1 CL = 100pF RL = 100KΩ Large-Signal Step Response G = +1 CL = 100pF RL = 100KΩ 50mV/div 200mV/div 2µs/div 5µs/div 60 Small-Signal Overshoot(%) 50 40 30 20 10 0 Small-Signal Overshoot vs.Load Capacitance 3 On Response vs.Frequency G=-5 RFB=100KΩ 0 On Response(dB) -3 VS = 5 V G = +1 VIN = 0.2VP-P CL=100pF RL = 100kΩ 1 10 100 1000 Frequency(KHz) 10000 -6 -9 10 100 1000 Load Capacitance(pF) 10000 6 5 Output Voltage(Vp-p) 4 3 2 1 0 1 Maximum Output Voltage vs.Frequency 50 Quiescent Current(μA) Maximum Output Voltage Without Slew-Rate Induced Distortion Quiescent And Short-Circuit Current vs.Supply Voltage 30 25 Short-Circuit Current(mA) 45 40 35 30 25 IQ ISC 20 15 10 5 VS = 5V G = -5 RL = 100kΩ CL=100pF 10 100 1000 Frequency(kHz) 10000 2 2.5 3 3.5 4 4.5 Supply Voltage(V) 5 5.5 ４ SGM2358 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100kΩ connected to Vs/2,unless otherwise noted. Input Voltage Noise Spectral Density vs.Frequency 1000 Voltage Noise(nV/ √Hz) CMRR And PSRR vs.Frequency 100 90 80 CMRR,PSRR(dB) 70 60 50 40 30 20 10 0 1 10 100 Frequency(kHz) 1000 10000 10 0.01 PSRR 100 CMRR 0.1 1 Frequency(kHz) 10 100 Supply Current vs.Temperature 0.46 0.44 Supply Current(mA) 0.42 0.4 0.38 0.36 0.34 0.32 -40 -20 0 20 40 Temperature(℃) 60 80 VS = 5V Open-Loop Gain vs.Temperature 150 140 Open–Loop Gain(dB) 130 120 110 100 90 -40 -20 0 20 40 Temperature(℃) 60 80 RL = 10kΩ RL = 2kΩ Common-Mode Rejection Ratio vs.Temperature 120 110 100 CMRR(dB) -0.1V < VCM < 3.5V Power-Supply Rejection Ratio vs.Temperature 120 110 100 PSRR(dB) 90 80 70 60 90 80 70 60 -40 -20 0 20 40 Temperature(℃) 60 80 -40 -20 0 20 40 Temperature(℃) 60 80 ５ SGM2358 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100kΩ connected to Vs/2,unless otherwise noted. Overload Recovery Time 2.5V Vs = 5V G = -5 VIN = 500mV 0V 500mV 0V Time(2µs/div) ６ SGM2358 APPLICATION NOTES Driving Capacitive Loads The SGM2358 can directly drive 250pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RLOAD. Power-Supply Bypassing and Layout The SGM2358 operates from either a single +3V to +5.5V supply or dual ±1.5V to ±2.75V supplies. For single-supply operation, bypass the power supply VDD with a 0.1µF ceramic capacitor which should be placed close to the VDD pin. For dual-supply operation, both the VDD and the VSS supplies should be bypassed to ground with separate 0.1µF ceramic capacitors. 2.2µF tantalum capacitor can be added for better performance. VDD VDD 10µF 10µF 0.1µF 0.1µF RISO ½ SGM2358 VIN CL VOUT Vn Vn ½ SGM2358 Vp VOUT ½ SGM2358 Vp 10µF VOUT Figure 1. Indirectly Driving Heavy Capacitive Load An improvement circuit is shown in Figure 2, It provides DC accuracy as well as AC stability. RF provides the DC accuracy by connecting the inverting signal with the output, CF and RIso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop. VSS(GND) 0.1µF VSS Figure 3. Amplifier with Bypass Capacitors CF RF RISO ½ SGM2358 VIN CL RL VOUT Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. ７ SGM2358 Typical Application Circuits Differential Amplifier The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then VOUT = ( Vp – Vn ) × R2 / R1 + Vref. C R2 R1 VIN ½ SGM2358 VOUT R2 Vn Vp R3 R4 Vref Figure 4. Differential Amplifier R1 ½ SGM2358 VOUT R3 = R1 // R2 Figure 6. Low Pass Active Filter Instrumentation Amplifier The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance. R2 R1 ½ SGM2358 Vn ½ SGM2358 Vp ½ SGM2358 R3 R4 VOUT Vref Figure 5. Instrumentation Amplifier Low Pass Active Filter The low pass filter shown in Figure 6 has a DC gain of ( - R2 / R1 ) and the –3dB corner frequency is 1/2πR2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration. ８ SGM2358 PACKAGE OUTLINE DIMENSIONS SO-8 D C Symbol L Dimensions In Millimeters Min Max 1.750 0.250 1.550 0.510 0.250 5.000 4.000 6.300 1.270 8° 1.350 0.100 1.350 0.330 0.190 4.780 3.800 5.800 0.400 0° Dimensions In Inches Min 0.053 0.004 0.053 0.013 0.007 0.188 0.150 0.228 0.016 0° Max 0.069 0.010 0.061 0.020 0.010 0.197 0.157 0.248 0.050 8° A A1 E1 E A2 B C D e θ E E1 e A1 1.270TYP 0.050TYP B A2 L θ A ９ SGM2358 REVISION HISTORY Location 09/07— Data Sheet REV. A 10/07— Data Sheet changed from REV.A to REV.B Changes to ELECTRICAL CHARACTERISTICS about Noise. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Changes to TYPICAL PERFORMANCE CHARACTERISTICS about Noise. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Page Shengbang Microelectronics Co, Ltd Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 150078 P.R. China Tel.: 86-451-84348461 Fax: 86-451-84308461 www.sg-micro.com １０ SGM2358