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SGM41527YTQQ24G/TR

SGM41527YTQQ24G/TR

  • 厂商:

    SGMICRO(圣邦微)

  • 封装:

    TQFN24_5.5X3.5MM_EP

  • 描述:

    1.6MHz同步锂离子和锂聚合物独立电池充电器,带自动电源路径选择器

  • 数据手册
  • 价格&库存
SGM41527YTQQ24G/TR 数据手册
SGM41526/SGM41527 1.6MHz Synchronous Li-Ion and Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector FEATURES ● High Accuracy  ±0.4% Charge Voltage Regulation ● 4A Synchronous 1.6MHz PWM Charger  ±5% Charge Current Regulation  Cycle-by-Cycle Current Limit  ±4% Input Current Regulation  Integrated 24V Switching MOSFETs ● Safety  Integrated Bootstrap Diode  Thermal Regulation (Current Limit for TJ = +120℃)  Digital Soft-Start  Thermal Shutdown ● Up to 95.2% Charge Efficiency  Battery Thermistor Sense Hot/Cold Charge Suspend ● 30V Absolute Maximum Input Voltage Rating with  Input Under-Voltage Lockout (UVLO) Adjustable Over-Voltage Threshold  Input Over-Voltage (ACOV) Protection ● 4.5V to 22V Input Operating Voltage Range APPLICATIONS ● Automatic Power Path Selector (Battery/Adapter) ● Dynamic Power Management (DPM) ● Battery Charge Voltage Tablet PCs  SGM41526: Select 2-, 3-, or 4-Cell with 4.2V/Cell Portable Terminals and Printers  SGM41527: Adjustable Charge Voltage Portable Medical Equipment ● 18μA Battery Current (No Adapter) Battery Backup Systems ● 1.3mA Input Current (Charge Disabled) TYPICAL APPLICATION 12V Adapter Input IIN VIN Q1 RIN 2Ω CIN 2.2μF RAC 10mΩ Q2 C11 0.1μF R12 4.02kΩ VBAT D2 SGM41526 R1 10Ω AVCC C1 1μF VREF R2 232kΩ ACSET R5 22.1kΩ Floating R10 1.5kΩ D3 CELL Thermal STAT Pad (AGND) RSR 10mΩ C5 0.047μF C8 0.1μF BTST PGND ISET R3 32.4kΩ C2 1μF L 3.3μH D4 REGN VREF R4 100kΩ Q3 SW OVPSET R7 100kΩ System R14 1kΩ ACDRV R6 1MΩ IOUT C4 10μF C12 0.1μF ACN PVCC ACP CMSRC nBATDRV R11 4.02kΩ D1 VSYS TTC C9 10μF C10 10μF IBAT C6 1μF C7 0.1μF SRP SRN TS VBAT VREF RT 103AT R8 5.23kΩ C3 0.1μF R9 30.1kΩ Figure 1. SGM41526 Typical Application Circuit (with a 2-Cell Battery) SG Micro Corp www.sg-micro.com JULY 2022 – REV. A SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector GENERAL DESCRIPTION The SGM41526 and SGM41527 are stand-alone Li-Ion and The SGM41526 and SGM41527 use dynamic power Li-polymer battery chargers. The PWM switches are integrated management (DPM) to prevent overload of the input source inside and they can automatically select the power path. They (AC adaptor). With DPM, the output charge current is reduced also include gate drivers for external power path selector if the input power limit is reached. The input current is sensed MOSFETs. The synchronous PWM controller runs at a fixed and controlled by a precision current-sense amplifier to limit the frequency (1.6MHz) and is capable of providing accurate input power. regulation of charge voltage, charge current and input current. They are capable of providing continuous battery pack temperature monitoring in which the charge is only allowed when the temperature is within the desired range. The SGM41526 can charge 2-, 3- or 4-cell (selected by CELL pin); while the SGM41527 has an adjustable charge voltage for up to 4 cells. In the SGM41527, the FB pin is used for charge voltage regulation (feedback) using an internal 2.1V reference and comparator. Typically, a full battery charging cycle has three consequent phases: pre-conditioning, constant current and constant voltage. The charge current is small during the pre-conditioning phase in which battery is heavily depleted. When the battery voltage exceeds a threshold voltage, the charge current increases to its maximum (fast charge current) until the battery voltage reaches its regulation level. Then the voltage is regulated and charge current drops. The starting phase is determined by the initial battery voltage. In constant voltage condition, the charge current drops automatically. When it decreases below 10% of the fast charge value, charging is Gate driver outputs are provided for power path selection that can be achieved by three external switches. Two N-type back-to-back MOSFETs (Q1, Q2) are used as input pair (adapter power in and reverse blocking control) along with a P-type (Q3) that is used to control the battery connection to the system bus. The system is powered from adapter by Q1 and Q2 on if a qualified adapter is present. Otherwise, the system is connected to the battery by Q3. And with power path control, the battery cannot feed back to the input. The SGM41526 and SGM41527 can charge the battery from a DC source with a voltage up to 22V. This range covers common adapter voltages and the car battery voltage. The qualified adapter range is adjustable by OVPSET pin. If the input voltage is out of the range, Q1 and Q2 will not be turned on. For 1-cell applications (only applicable to SGM41527), when the battery is not removable, the design can be simplified by direct connection of the battery to the system. Therefore, when the input source is overloaded, the battery can help power the terminated. A programmable safety charge timer is provided to system automatically. prevent prolonged charging if it is not naturally terminated for The SGM41526 and SGM41527 are available in a Green any reason. When the battery voltage falls below recharge threshold, charge cycle is automatically started (or restarted). TQFN-5.5×3.5-24L package. It can operate over an ambient temperature range of -40℃ to +85℃. If the input voltage falls below the battery voltage, the device enters sleep mode. In sleep mode, the quiescent current is very low. SG Micro Corp www.sg-micro.com JULY 2022 2 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector PACKAGE/ORDERING INFORMATION MODEL PACKAGE DESCRIPTION SPECIFIED TEMPERATURE RANGE ORDERING NUMBER PACKAGE MARKING PACKING OPTION SGM41526 TQFN-5.5×3.5-24L -40℃ to +85℃ SGM41526YTQQ24G/TR SGM41526 YTQQ XXXXX Tape and Reel, 3000 SGM41527 TQFN-5.5×3.5-24L -40℃ to +85℃ SGM41527YTQQ24G/TR SGM41527 YTQQ XXXXX Tape and Reel, 3000 MARKING INFORMATION NOTE: XXXXX = Date Code, Trace Code and Vendor Code. XXXXX Vendor Code Trace Code Date Code - Year Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If you have additional comments or questions, please contact your SGMICRO representative directly. ABSOLUTE MAXIMUM RATINGS AGND Referenced Voltages PVCC ............................................................... -0.3V to 24V AVCC, ACP, ACN, ACDRV, CMSRC, STAT ...... -0.3V to 30V BTST ................................................................ -0.3V to 30V nBATDRV, SRP, SRN ...................................... -0.3V to 24V SW ...................................................................... -2V to 24V FB (SGM41527) ............................................... -0.3V to 24V CELL (SGM41526), OVPSET, REGN, TS, TTC ........................................................................... -0.3V to 7V VREF, ISET, ACSET ....................................... -0.3V to 3.6V PGND.............................................................. -0.3V to 0.3V Differential Voltages SRP-SRN, ACP-ACN ........................................ -0.5V to 0.5V Package Thermal Resistance TQFN-5.5×3.5-24L, θJA ........................................... 37.4℃/W Junction Temperature .................................................+150℃ Storage Temperature Range ....................... -65℃ to +150℃ Lead Temperature (Soldering, 10s) ............................+260℃ ESD Susceptibility HBM ............................................................................. 2000V CDM ............................................................................ 1000V OVERSTRESS CAUTION Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Functional operation of the device at any conditions beyond those indicated in the Recommended Operating Conditions section is not implied. ESD SENSITIVITY CAUTION This integrated circuit can be damaged if ESD protections are not considered carefully. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because even small parametric changes could cause the device not to meet the published specifications. DISCLAIMER SG Micro Corp reserves the right to make any change in circuit design, or specifications without prior notice. RECOMMENDED OPERATING CONDITIONS Input Voltage Range, VIN......................................4.5V to 22V Output Voltage, VBAT ............................................. 18V (MAX) Output Current Range (RSR = 10mΩ), IOUT............. 0.6A to 4A Maximum Differential Voltage SRP-SRN, ACP-ACN ................................ -200mV to 200mV Operating Temperature Range ...................... -40℃ to +85℃ SG Micro Corp www.sg-micro.com JULY 2022 3 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector PIN CONFIGURATION (TOP VIEW) SW SW 1 24 PVCC 2 23 PGND PVCC 3 22 PGND AVCC 4 21 BTST ACN 5 20 REGN ACP 6 19 nBATDRV CMSRC 7 18 OVPSET ACDRV 8 17 ACSET STAT 9 16 SRP TS 10 15 SRN TTC 11 14 CELL/FB AGND EP 12 13 VREF ISET TQFN-5.5×3.5-24L PIN DESCRIPTION PIN NAME TYPE FUNCTION 1, 24 SW P Switching Node. Connect SW pin to the output inductor and also to a bootstrap capacitor from BTST pin. 2, 3 PVCC P Charger Input Voltage. Decouple with at least 10μF ceramic capacitor from PVCC pin to PGND as close to IC as possible. 4 AVCC P IC Supply Power. Place an RC filter (10Ω-1μF) with ceramic capacitor from input power to AVCC pin to AGND and place capacitor close to the IC. For 5V input, a minimum 5Ω resistor is recommended. The device under-voltage lockout (UVLO) is sensed on AVCC pin (typically 3.3V rising with 0.21V hysteresis). 5 ACN I Input Current Sense Resistor Negative Input. Connect a 100nF ceramic capacitor from ACN to ACP for differential-mode filtering. Connect a 100nF ceramic capacitor from ACN to AGND for common-mode filtering. 6 ACP I/P Input Current Sense Resistor Positive Input. Connect a 100nF ceramic capacitor from ACN to ACP for differential-mode filtering. Connect an optional 100nF ceramic capacitor from ACP to AGND for common-mode filtering. 7 CMSRC O Common Source of the ACFET and RBFET. Connect with a 4.02kΩ resistor to the common source of the input MOSFET ACFET (Q1) and RBFET (Q2) to control the turn-on speed and limit inrush current. An external minimum 500kΩ resistor between ACDRV pin and CMSRC pin is essential. O Gate Driver Output for Input Switches. A 4.02kΩ resistor is placed to the common gate of the external N-channel ACFET and RBFET power MOSFETs. Connect both FETs as common source. It has break-before-make logic with respect to the nBATDRV and acts asymmetrical, allowing quick turn-off and slow turn-on. O Open-Drain Charge Status Output Pin with 10kΩ External Pull-Up to the Power Rail. It can be connected to LED to show the charging status or it can directly communicate with the host. The STAT pin acts as follows: During charge: low (LED ON). Charge completed, charger in sleep mode or charge disabled: high (LED OFF). Charge suspend (in response to a fault): 0.5Hz, including battery detection, charge suspend, input over-voltage, battery over-voltage, and timer fault. (LED BLINKS). 8 9 ACDRV STAT SG Micro Corp www.sg-micro.com JULY 2022 4 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector PIN DESCRIPTION (continued) PIN NAME TYPE 10 TS I 11 TTC I 12 VREF P 3.3V Voltage Reference Output Internally Powered from AVCC Pin. Connect a 1μF ceramic capacitor to AGND as close to IC as possible. It is usually connected to the resistor divider of ISET, ACSET and TS pins. It can also be connected to STAT and CELL pins as pull-up rail. I Program Pin for Charge Current Settings. The voltage on this pin and the charge shunt resistor RSR determine the fast charge current. VISET voltage can be set by a resistor divider (VREF-ISET-AGND). VISET ICHG = 20 × RSR The pre-charge and termination currents are equal and determined by ICHG as a ratio of 10%. The charger disables when ISET voltage is pulled below 30mV and enables if it exceeds 120mV. 13 ISET FB (SGM41527) Temperature Sense Voltage Input. Connect to a negative temperature coefficient (NTC) thermistor that can sense the battery temperature. The actual hot and cold temperature can be set by a resistor divider from VREF to TS to AGND. It is recommended to use a 103AT type thermistor for battery pack temperature sensing. Safety Timer (Fast Charge) and Termination Control. Pre-charge timer is fixed inside the device (30min typically). Fast charge safety timer is determined by the capacitor from this pin to AGND (5.6min/nF). Safety timer is disabled by pulling this pin low or high, but charge termination is disabled only when it is pulled low. Cell Selection Pin for SGM41526. Set it low for 4-cell battery, floating for 2-cell, and set it high for 3-cell battery. Cell voltage regulation is fixed at 4.2V per cell. CELL (SGM41526) 14 FUNCTION I Feedback Pin for Regulating the Charge Voltage in SGM41527 in the Constant-Voltage Mode. A resistor divider from battery terminal (VBAT) to FB (VFB) to AGND sets the charge voltage. And the internal voltage reference is 2.1V. 15 SRN I Charge Current Sense Resistor, Negative Input. A shunt resistor is connected between SRN pin and SRP pin to sense charge current. Connect a 100nF ceramic capacitor between SRN pin and SRP pin for differential-mode filtering. Connect an optional 100nF capacitor between SRN and AGND for common-mode filtering. 16 SRP I/P Charge Current Sense Resistor, Positive Input. Connect a 100nF ceramic capacitor between SRN pin and SRP pin for differential-mode filtering. Connect another 100nF ceramic capacitor between SRP pin and AGND for common-mode filtering. I Program Pin to Set Input Current Limit for Dynamic Power Management. A voltage divider from VREF to ACSET to AGND can be used to set this parameter along with the input shunt resistor RAC: V IDPM = ACSET 20 × R AC I Program Pin for Input Over-Voltage Detection. The input voltage can be sensed by a resistor voltage divider from input to OVPSET to AGND so that the ACOV and ACUV can be realized by setting proper resistor. An input over-voltage (ACOV) is detected if OVPSET voltage exceeds the internal 1.6V reference. A voltage below 0.494V indicates an input under-voltage (ACUV). If either of the two cases happens, both of the ACFET and RBFET will be turned off. If it is in charging process, the charge will terminate. Then the LED that is connected to STAT pin will blink at 0.5Hz to indicate a fault. 17 18 ACSET OVPSET 19 nBATDRV O Gate Driver Output for External P-Type Power MOSFET (Battery Discharge Path). Use a 1kΩ resistor to connect this pin to the gate of the BATFET (Q3) to control the turn-on speed. The source of the BATFET connects to the system and the drain connects to the battery positive terminal. In order to decrease inrush current, the internal gate driver is designed with quick turn-off and slow turn-on functions. This gate driver has break-before-make logic with respect to the ACDRV gate driver (input switch). 20 REGN P 5V Internal Supply for the PWM Low-side Switch Driver. Decouple with a 1μF ceramic capacitor from REGN pin to PGND pin close to the IC. Anode of integrated bootstrap diode is connected to this pin. 21 BTST P High-side Power MOSFET Driver Power Supply. Connect a 47nF bootstrap capacitor from SW to BTST. 22, 23 PGND P Device Power Ground. On the PCB layout, connect this pin directly to ground points of the input and output capacitors of the charger. PGND connects to AGND only through in one point on thermal pad under the IC. EP AGND P Exposed Pad Beneath the IC. Always solder thermal pad to the board. Use vias to transfer heat to the back side and other layers of PCB. Thermal pad acts as AGND and only connects to PGND at one single point. NOTE: 1. I = Input, O = Output, P = Power. SG Micro Corp www.sg-micro.com JULY 2022 5 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector ELECTRICAL CHARACTERISTICS (TJ = -40℃ to +85℃, 4.5V ≤ VPVCC, VAVCC ≤ 22V (referred to AGND), typical values at TJ = +25℃, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 22 V µA Operating Conditions AVCC Input Voltage Operating Range during Charging VAVCC_OP 4.5 Quiescent Currents Battery Discharge Current (Sum of Currents into AVCC, PVCC, ACP, ACN) Adapter Supply Current (Sum of Currents into AVCC, ACP, ACN) IBAT IAC VAVCC > VUVLO, VSRN > VAVCC (Sleep), TJ = 0℃ to +85℃ 7.4 BTST, SW, SRP, SRN, VAVCC > VUVLO, VAVCC > VSRN, VISET < 30mV, VBAT = 12.6V, charge disabled 18 30 BTST, SW, SRP, SRN, VAVCC > VUVLO, VAVCC > VSRN, VISET > 120mV, VBAT = 12.6V, charge done 18 30 VAVCC > VUVLO, VAVCC > VSRN, VISET < 30mV, VBAT = 12.6V, charge disabled 1.3 2.0 VAVCC > VUVLO, VAVCC > VSRN, VISET > 120mV, charge enabled, no switching 1.4 2.0 VAVCC > VUVLO, VAVCC > VSRN, VISET > 120mV, charge enabled, switching 15 mA (1) Charge Voltage Regulation CELL floating, 2-cell, measured on SRN 8.4 SRN Regulation Voltage (SGM41526) VBAT_REG CELL to VREF, 3-cell, measured on SRN 12.6 CELL to AGND, 4-cell, measured on SRN 16.8 SRN Regulation Voltage (SGM41527) VFB_REG Measure on FB 2.1 Charge Voltage Regulation Initial Accuracy V V -0.4 0.4 % 0.12 0.8 V Current Regulation - Fast Charge ISET Voltage Range VISET RSENSE = 10mΩ Charge Current Set Factor (Amps of Charge Current per Volt on ISET Pin) KISET RSENSE = 10mΩ Charge Current Regulation Initial Accuracy (with Schottky Diode on SW) 5 A/V VSRP-SRN = 40mV 39.0 41.0 43.1 VSRP-SRN = 20mV 19.1 20.7 22.4 VSRP-SRN = 5mV 3.8 5.4 7.1 30 Charge Disable Threshold VISET_CD VISET falling Charge Enable Threshold VISET_CE VISET rising Leakage Current into ISET IISET VISET = 2V KDPM RSENSE = 10mΩ 50 100 mV mV 120 mV 100 nA Input Current Regulation Input DPM Current Set Factor (Amps of Input Current per Voltage on ACSET) Input DPM Current Regulation Initial Accuracy (with Schottky Diode on SW) Leakage Current into ACSET Pin SG Micro Corp www.sg-micro.com IACSET 5 A/V VACP-ACN = 80mV 78.3 81.6 84.8 VACP-ACN = 40mV 37.3 41.0 44.7 VACP-ACN = 20mV 17.6 20.7 23.8 VACP-ACN = 5mV 4.2 5.5 6.9 VACP-ACN = 2.5mV 1.5 3.0 4.5 VACSET = 2V 100 mV nA JULY 2022 6 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector ELECTRICAL CHARACTERISTICS (continued) (TJ = -40℃ to +85℃, 4.5V ≤ VPVCC, VAVCC ≤ 22V (referred to AGND), typical values at TJ = +25℃, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Current Regulation - Pre-Charge Pre-Charge Current Set Factor KIPRECHG Pre-Charge Current Regulation Initial Accuracy Percentage of fast charge current 10 (2) % VSRP-SRN = 4mV 3.4 4.6 5.7 VSRP-SRN = 2mV 1.3 2.5 3.8 mV Charge Termination Termination Current Set Factor KTERM Termination Current Regulation Initial Accuracy Deglitch Time for Termination (Both Edges) Termination Qualification Time Termination Qualification Current Percentage of fast charge current 10 (2) % VSRP-SRN = 4mV 2.9 3.9 4.8 VSRP-SRN = 2mV 0.9 1.8 2.7 tTERM_DEG tQUAL VSRN > VRECH and ICHG < ITERM IQUAL Discharge current once termination is detected mV 100 ms 250 ms 2 mA Input Under-Voltage Lockout Comparator (UVLO) AC Under-Voltage Rising Threshold AC Under-Voltage Hysteresis, Falling VUVLO Measure on AVCC 2.9 3.3 3.8 V VUVLO_HYS Measure on AVCC 210 VSLEEP VAVCC - VSRN falling 90 VSLEEP_HYS VAVCC - VSRN rising 210 mV tSLEEP_FALL_CD VAVCC - VSRN falling 1 ms tSLEEP_FALL_FETOFF VAVCC - VSRN falling 5 ms mV Sleep Comparator (Reverse Discharging Protection) Sleep Mode Threshold Sleep Mode Hysteresis Sleep Deglitch to Disable Charge Sleep Deglitch to Turn Off Input FETs Deglitch to Enter Sleep Mode, Disable VREF and Enter Low Quiescent Mode Deglitch to Exit SLEEP Mode, and Enable VREF 280 mV tSLEEP_FALL VAVCC - VSRN falling 100 ms tSLEEP_PWRUP VAVCC - VSRN rising 30 ms ACN-SRN Comparator Threshold to Turn On BATFET VACN-SRN VACN-SRN falling 180 Hysteresis to Turn Off BATFET VACN-SRN_HYS VACN-SRN rising 110 mV Deglitch to Turn On BATFET tBATFETOFF_DEG VACN-SRN falling 2 ms Deglitch to Turn Off BATFET tBATFETON_DEG 50 µs VACN-SRN rising 400 mV Battery LOWV Comparator Pre-Charge to Fast Charge Transition Fast Charge to Pre-Charge Hysteresis VLOWV VLOWV_HYS CELL floating, 2-cell Measure on SRN CELL to VREF, 3-cell (SGM41526) CELL to AGND, 4-cell 5.7 5.8 8.4 8.7 9.1 11.1 11.7 12.2 Measure on FB (SGM41527) 1.42 1.46 1.50 CELL floating, 2-cell Measure on SRN CELL to VREF, 3-cell (SGM41526) CELL to AGND, 4-cell 800 6.1 V 400 600 mV Measure on FB (SGM41527) 100 VLOWV Rising Deglitch tPRE2FAS Delay to start fast charge current 25 ms VLOWV Falling Deglitch tFAST2PRE Delay to start pre-charge current 25 ms SG Micro Corp www.sg-micro.com JULY 2022 7 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector ELECTRICAL CHARACTERISTICS (continued) (TJ = -40℃ to +85℃, 4.5V ≤ VPVCC, VAVCC ≤ 22V (referred to AGND), typical values at TJ = +25℃, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX CELL floating, 2-cell 110 200 290 CELL to VREF, 3-cell 190 300 430 CELL to AGND, 4-cell 280 400 540 UNITS Recharge Comparator Recharge Threshold, below Regulation Voltage Limit, VBAT_REG - VSRN (SGM41526), or VFB_REG - VFB (SGM41527) VRECHG Measure on SRN (SGM41526) mV Measure on FB (SGM41527) 70 VRECHG Rising Deglitch tRECH_RISE_DEG VFB decreasing below VRECHG 10 ms VRECHG Falling Deglitch tRECH_FALL_DEG VFB increasing above VRECHG 10 ms Battery Over-Voltage Comparator Over-Voltage Rising Threshold VOV_RISE As percentage of VBAT_REG (SGM41526) or VFB_REG (SGM41527) 104 % Over-Voltage Falling Threshold VOV_FALL As percentage of VSRN (SGM41526) or VFB_REG (SGM41527) 102 % Input Over-Voltage Comparator (ACOV) AC Over-Voltage Rising Threshold to Turn Off ACFET AC Over-Voltage Falling Hysteresis AC Over-Voltage Rising Deglitch to Turn Off ACFET and Disable Charge AC Over-Voltage Falling Deglitch to Turn On ACFET VACOV OVPSET rising 1.53 1.6 1.69 V VACOV_HYS OVPSET falling 40 mV tACOV_RISE_DEG OVPSET rising 1 µs tACOV_FALL_DEG OVPSET falling 30 ms Input Under-Voltage Comparator (ACUV) AC Under-Voltage Falling Threshold to Turn Off ACFET VACUV OVPSET falling VACUV_HYS OVPSET rising 80 mV tACOV_FALL_DEG OVPSET falling 1 µs tACOV_RISE_DEG OVPSET rising 30 ms VISET > 120mV, charging 120 ℃ TSHUT Temperature rising 150 ℃ TSHUT_HYS Temperature falling 20 ℃ Thermal Shutdown Rising Deglitch TSHUT_RISE_DEG Temperature rising 100 µs Thermal Shutdown Falling Deglitch TSHUT_FALL_DEG Temperature falling 10 ms AC Under-Voltage Rising Hysteresis AC Under-Voltage Falling Deglitch to Turn Off ACFET and Disable Charge AC Under-Voltage Rising Deglitch to Turn On ACFET 0.44 0.494 0.55 V Thermal Regulation Junction Temperature Regulation Accuracy TA_REG Thermal Shutdown Comparator Thermal Shutdown Rising Temperature Thermal Shutdown Hysteresis Thermistor Comparator Cold Temperature Threshold, TS Pin Voltage Rising Threshold Cold Temperature Hysteresis, TS Pin Voltage Falling Hot Temperature TS Pin Voltage Rising Threshold Cut-Off Temperature TS Pin Voltage Falling Threshold Deglitch Time for Temperature out of Range Detection Deglitch Time for Temperature in Valid Range Detection SG Micro Corp www.sg-micro.com VLTF Charger suspends charge, as percentage of VVREF 72.1 73.6 75.2 % 0.68 1.45 % VLTF_HYS As percentage of VVREF VHTF As percentage of VVREF 45.8 47.3 48.8 % VTCO As percentage of VVREF 43.2 44.6 45.7 % tTS_CHG_SUS tTS_CHG_RESUME VTS > VLTF, or VTS < VTCO, or VTS < VHTF 20 ms VTS < VLTF - VLTF_HYS or VTS > VTCO, or VTS > VHTF 400 ms JULY 2022 8 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector ELECTRICAL CHARACTERISTICS (continued) (TJ = -40℃ to +85℃, 4.5V ≤ VPVCC, VAVCC ≤ 22V (referred to AGND), typical values at TJ = +25℃, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Charge Over-Current Comparator (Cycle-by-Cycle) Charge Over-Current Rising Threshold, VSRP > 2.2V VOCP_CHRG Current as percentage of fast charge current 180 % Charge Over-Current Limit Min, VSRP < 2.2V VOCP_MIN Measure VSRP-SRN 46 mV Charge Over-Current Limit Max, VSRP > 2.2V VOCP_MAX Measure VSRP-SRN 77 mV Measure on HSFET 10 A HSFET Over-Current Comparator (Cycle-by-Cycle) Current Limit on HSFET IOCP_HSFET Charge Under-Current Comparator (Cycle-by-Cycle) Charge Under-Current Falling Threshold VUCP Measure on VSRP-SRN 1 5 12 mV Battery Short Comparator Battery Short Falling Threshold VBATSHT Measure on SRN 2 V Battery Short Rising Hysteresis VBATSHT_HYS Measure on SRN 200 mV Deglitch on Both Edges tBATSHT_DEG 1 µs Charge Current during BAT_SHORT VBATSHT Percentage of fast charge current 10 (2) % VREF Regulator VREF Regulator Voltage VREF Current Limit VVREF_REG IVREF_LIM VAVCC > VUVLO, no load 3.24 VVREF = 0V, VAVCC > VUVLO 20 VAVCC > 10V, VISET > 120mV 4.8 IREGN_LIM VREGN = 0V, VAVCC > 10V, VISET > 120mV 20 Pre-Charge Safety Timer tPRECHRG Pre-charge time before fault occurs Fast Charge Timer Range tFASTCHRG TCHG = CTTC × KTTC 3.3 3.36 V 80 mA 5.2 V 100 mA REGN Regulator REGN Regulator Voltage REGN Current Limit VREGN_REG 5.0 TTC Input Fast Charge Timer Accuracy Timer Multiplier TTC Low Threshold TTC Source/Sink Current 1800 1 10 -10 KTTC VTTC_LOW TTC falling ITTC 45 s 10 hr % 5.6 min/nF 0.33 V 50 55 µA TTC Oscillator High Threshold VTTC_OSC_HI 1.5 V TTC Oscillator Low Threshold VTTC_OSC_LO 1.0 V Battery Switch (BATFET) Driver BATFET Turn-Off Resistance RDS_BAT_OFF VAVCC > 5V 200 Ω BATFET Turn-On Resistance RDS_BAT_ON VAVCC > 5V 10 kΩ BATFET Drive Voltage VBATDRV_REG VBATDRV_REG = VACN - VBATDRV when VAVCC > 5V and BATFET is on 6.4 V BATFET Power-Up Delay to Turn Off BATFET after Adapter is Detected tBATFET_DEG 5.1 30 ms 160 µA AC Switch (ACFET) Driver ACDRV Charge Pump Current Limit IACFET Gate Drive Voltage on ACFET VACDRV_REG Maximum Load between ACDRV and CMSRC RACDRV_LOAD SG Micro Corp www.sg-micro.com VACDRV - VCMSRC = 5V VACDRV - VCMSRC when VAVCC > VUVLO 5.4 20 5.6 V kΩ JULY 2022 9 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector ELECTRICAL CHARACTERISTICS (continued) (TJ = -40℃ to +85℃, 4.5V ≤ VPVCC, VAVCC ≤ 22V (referred to AGND), typical values at TJ = +25℃, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS tDRV_DEAD Dead time when switching between ACFET and BATFET 10 µs tWAKE Max time charge is enabled 500 ms Wake Current IWAKE RSENSE = 10mΩ Discharge Timer tDISCH Max time discharge current is applied Discharge Current Fault Current after a Time-Out Fault AC/BAT Switch Driver Timing Driver Dead Time Battery Detection Wake Timer Wake Threshold with Respect to VREG to Detect Absent during Wake Discharge Threshold to Detect Battery Absent during Discharge 100 250 400 mA 1 s IDISCH 9.5 mA IFAULT 2 mA VWAKE Measure on SRN (SGM41526) 100 mV/cell VDISCH Measure on SRN (SGM41526) 2.9 V/cell 1600 kHz Dead time when switching between LSFET and HSFET no load 30 ns VBTST - VSW = 4.5V 29 55 mΩ 33 65 mΩ Internal PWM PWM Switching Frequency Driver Dead Time fSW (1) tSW_DEAD High-side MOSFET On-Resistance RDS_HI Low-side MOSFET On-Resistance RDS_LO Bootstrap Refresh Comparator Threshold Voltage VBTST_REFRESH VBTST - VSW when low-side refresh pulse is requested, VAVCC = 4.5V 2.8 VBTST - VSW when low-side refresh pulse is requested, VAVCC > 6V 2.8 V Internal Soft-Start (8 Steps to Regulation Current ICHG) Soft-Start Steps Soft-Start Step Time SS_STEP 8 step tSS_STEP 1.6 tCE_DELAY 1.5 s 0.85 V 3 ms Charger Section Power-Up Sequencing Delay from ISET above 120mV to Start Charging Battery Integrated BTST Diode Forward Bias Voltage VF IF = 120mA at +25℃ Reverse Breakdown Voltage VR IR = 2μA at +25℃ 21 V Logic IO Pin Characteristics (STAT, CELL) STAT Output Low Saturation Voltage CELL Pin Input Low Threshold, 4-Cell (SGM41526) CELL Pin Input Mid Threshold, 2-Cell (SGM41526) CELL Pin Input High Threshold, 3-Cell VOUT_LO Sink current = 5mA VCELL_LO CELL pin voltage falling edge VCELL_MID CELL pin middle level voltage VCELL_HI CELL pin voltage rising edge 0.6 0.3 0.7 V 2.5 2.7 V V V NOTES: 1. Specified by design. 2. The minimum current is 250mA on 10mΩ sense resistor. SG Micro Corp www.sg-micro.com JULY 2022 10 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector TYPICAL PERFORMANCE CHARACTERISTICS Efficiency vs. Charge Current 100 95 95 90 90 Efficiency (%) Efficiency (%) Efficiency vs. Charge Current 100 85 80 75 0 1000 2000 3000 80 75 VIN = 15V, 3 Cells, VBAT = 11.4V VIN = 15V, 2 Cells, VBAT = 7.6V 70 85 4000 70 Charge Current (mA) 2000 3000 VIN = 15V, 2 Cells, VBAT = 7.6V VSW 10V/div 2A/div VACDRV STAT ICHG Time (20ms/div) Time (5ms/div) Charge Enable by ISET Charge Disable by ISET Time (200ms/div) SG Micro Corp www.sg-micro.com VSW IL 2A/div IL VIN = 15V, 2 Cells, VBAT = 7.6V 10V/div 5V/div 20V/div 2A/div VREGN STAT VISET 500mV/div VISET 500mV/div VIN = 15V, 2 Cells, VBAT = 7.6V 4000 5V/div VVREF 1000 Current Soft-Start 10V/div 2V/div 10V/div VAVCC 0 Charge Current (mA) Power-Up VIN = 15V, 2 Cells, VBAT = 0V, VISET = 0V VIN = 5V, 1 Cell, VBAT = 3.8V VIN = 9V, 1 Cell, VBAT = 3.8V Time (2µs/div) JULY 2022 11 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector TYPICAL PERFORMANCE CHARACTERISTICS (continued) Continuous Conduction Mode Switching Discontinuous Conduction Mode Switching VIN = 15V, 2 Cells, VBAT = 7.6V, ICHG = 2A Time (200ns/div) Time (200ns/div) BATFET to ACFET Transition During Power-Up VBATDRV ISYS ICHG Time (10ms/div) Time (100µs/div) Battery-to-Ground Short Protection VSRN 2A/div 10V/div VSYS IIN 2A/div VACDRV VIN = 20V, 1 Cell, VBAT = 3.8V 2A/div VAVCC System Load Transient (Input Current DPM) 10V/div 10V/div 10V/div VIN = 15V, 2 Cells, VBAT = 0V 1A/div IL 10V/div VSW 1A/div IL 10V/div VSW VIN = 15V, 2 Cells, VBAT = 9V, ICHG = 0.15A Battery-to-Ground Short Transition VIN = 15V, 3 Cells, VBAT = 11.4V VSRN VIN = 15V, 3 Cells, VBAT = 11.4V SG Micro Corp www.sg-micro.com VSW IL 2A/div 2A/div Time (2ms/div) 10V/div 10V/div IL 5V/div 5V/div VSW Time (10µs/div) JULY 2022 12 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector TYPICAL PERFORMANCE CHARACTERISTICS (continued) Battery Insertion and Removal 5V/div VSRN VIN = 15V, 3 Cells, VBAT = 11.4V 10V/div VSW 1A/div IL Time (500ms/div) SG Micro Corp www.sg-micro.com JULY 2022 13 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector FUNCTIONAL BLOCK DIAGRAM VREF Thermal PAD 12 AVCC 4 3.3V VSRN + 90mV CE VREF LDO + REGN LDO ACN 6 + 20× Refresh + 5 20 × IAC Fast/PreCHRG Sele ction LOWV SRP 16 SRN 15 EA & PWM Control IBAT_REG Driver + + 20× Thermal Regula tion SGM415 26 + OCP 1.36V 2.03V 3 PVCC 1 SW 24 SW 22 PGND 23 PGND SLE EP BAT_SHORT RECHG 10 TS Timer Fau lt + + + + 8 ACDRV 7 CMSRC 19 nBA TDRV 10% × V ISET 2V VREF Battery Detection Charge Control Log ic SUSPE ND ACUV VISET + 20 × ICH G VSRN ACOV 1.6V OTP UVLO + Safety Timer TTC 11 UCP Charge Termination + LOWV STAT PVCC BAT_OVP 2.184V SGM415 27 0.494V 2 2.1V + OVP SET 18 BTST 20 × ICH G SRN CELL (SGM415 26) 14 FB (SGM415 27) 21 + ACSET 17 ISET 13 REGN UVLO SLE EP ACP 20 + + + CE 120mV 9 VSRN + 180mV VACN SGM41526 SGM41527 ACDRV Charg e Pump SLE EP + ACN-SRN UVLO ACOV System Power Selector Control ACUV Figure 2. Functional Block Diagram SG Micro Corp www.sg-micro.com JULY 2022 14 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector DETAILED DESCRIPTION The SGM41526 and SGM41527 are Li-Ion and Li-polymer fixed-frequency synchronous PWM battery chargers with integrated switching power MOSFETs. Using external switches, power path management is provided along with accurate regulation of the input current, charge current and battery voltage. The internal block diagram is given in Figure 2. Battery Voltage Regulation An accurate PWM voltage regulator is used for charge voltage regulation. For the SGM41526, the number of battery cells depends on the CELL pin. Two (CELL = floating), three (CELL = VREF) or four (CELL = AGND) cells can be connected in series with a fixed nominal voltage of 4.2V per cell. Table 1 shows the charge regulation voltage in each case. Table 1. Defining Number of Battery Cells for SGM41526 CELL Pin Voltage Charge Regulation Voltage Floating 8.4V (2 Cells) VREF 12.6V (3 Cells) AGND 16.8V (4 Cells) For the SGM41527, the regulation voltage is adjustable. The FB voltage is compared to an internal 2.1V voltage reference like a conventional voltage regulator. The regulation voltage can be adjusted by using an external resistor divider on the battery voltage (output voltage). Connect the center point of the resistor divider to the FB pin. The battery regulation voltage (VBAT) in the SGM41527 is calculated by Equation 1:  R  VBAT= 2.1V ×  1 + 1  R 2   (1) where • R1 is connected between the battery positive terminal and FB. • R2 is connected between FB and AGND. Battery Current Regulation The maximum charging current for fast charge is set by the ISET input. Connect battery current sense resistor (RSR) between SRP and SRN. The equation for charge current is given by: adjustable charge current is 4A, and with a 20mΩ resistor, it is 2A. If VISET = 0.5V and RSR = 10mΩ, the fast charge current is ICHG = 2.5A. Pulling the ISET voltage down to ground (below 30mV) disables the charger. To enable the charger, the ISET voltage should exceed 120mV. The minimum charge current is limited by the 120mV threshold level. For example, when RSR = 10mΩ, the minimum fast charge current is no less than 600mA. As a protective feature, if the device junction temperature exceeds +120 ℃ , the charge current folds back and is internally reduced to keep the junction temperature below +120℃. Pre-Charge Phase If the battery voltage is lower than VLOWV when the device is powered up, the charge will start with a small pre-charge current to safely recover the battery from deep discharge state. If the battery voltage still does not exceed the VLOWV threshold after 30 minutes, charging will stop, and fault status will be declared by the status pins. VLOWV is typically 2.9V/cell for SGM41526 and 1.46V on FB pin for SGM41527. The pre-charge current is determined by the fast charge current as a ratio of 10%: IPRECHARGE = VISET 200 × RSR (3) The deglitch time of fast charge and pre-charge transition is 25ms. Typical Charge Cycle Figure 3 shows a complete charge cycle profile (battery voltage and current versus time) with all the three phases followed by a typical discharge and auto recharge. The charge is started assuming that the battery is in a deep discharge state (low battery voltage). After termination and stopping the charge, the battery is normally discharged by system loads. When the voltage falls below the recharge threshold, another cycle is initiated from fast charge, to bring the battery back to the full charge state. A new charging cycle begins when any of the following conditions is met: (2) • The SRN pin voltage falls below the recharge threshold (VRECH). • A power-on-reset (POR). • Disable and enable charge by pulling ISET pin below 30mV and then above 120mV, respectively. The maximum of the full-scale SRP-SRN differential voltage is 40mV, and it determines the maximum charge current selected by ISET. The maximum valid input voltage of ISET is 0.8V. For example, with a 10mΩ sense resistor, the maximum Depending on the battery voltage, the charge is started with the proper phase. Charge sequence details will be explained in the next sections. ICHG = SG Micro Corp www.sg-micro.com VISET 20 × RSR JULY 2022 15 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector DETAILED DESCRIPTION (continued) VREG Pre-Charge Current Regulation Phase Fast Charge Current Regulation Phase (CC) Fast Charge Voltage Regulation Phase (CV) Termination Discharge Termination Discharge Auto Recharge ICHG VRECH Charge Current Battery Voltage VLOWV 10%ICHG Pre-Charge Timer Fast Charge Safety Timer Auto Recharge One Complete Charge Cycle Figure 3. Typical Charge and Discharge Profile Regulation of the Input Current The input current is used to power the system and to charge the battery. System current may vary from zero to maximum load. With dynamic power management (DPM) capability, the adapter does not need to be designed for maximum power demand for both charge and system at the same time. Otherwise it will lead to a bulky AC adapter and relatively higher cost. With DPM, the charge current is reduced when the system has high demand for power, such that the input current is regulated to a predefined maximum. Therefore, the AC adapter can be designed for lower power that results in smaller adapter size and cost. Input current regulation level of DPM is programmed by the voltage on ACSET pin and the input shunt resistor RAC, as given in Equation 4: IDPM = VACSET 20 × R AC (4) The sense voltage across RAC (typically 10mΩ) is sent to ACP and ACN pins. The regulation accuracy can be improved with larger sense resistor but at the cost of lower efficiency. Termination, Recharge and Timers In the constant voltage charging phase, the device also detects the charging current and battery voltage. The charge SG Micro Corp www.sg-micro.com cycle will be terminated if the battery is fully charged that is detected when charge voltage exceeds recharge threshold (VRECH) and charge current falls below termination current threshold (ITERM). Charge voltage is sensed on the SRN pin of the SGM41526 and on the FB pin of the SGM41527. Recharge voltage threshold (VRECH) is a little bit lower than the regulation voltage and the termination current threshold (ITERM) is equal to 10% of the programmed fast charge current as given in Equation 5: ITERM = VISET 200 × RSR (5) For battery safety, prolonged charging must be avoided, so time limits are considered for charge phases. For pre-charge phase, a fixed 30-minute safety timer is employed. For the fast charge phase, an adjustable timer is used. This timer can be programmed by a capacitor (CTTC) connected between the TTC and AGND pins based on Equation 6: tTTC (min) = CTTC (nF) × KTTC (min/nF) (6) where KTTC is a constant typically equal to 5.6min/nF. Connecting TCC pin to AGND disables both termination and fast charge timers. Connecting TCC pin to VREF disables the safety timer only and termination timer remains functioning. JULY 2022 16 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector DETAILED DESCRIPTION (continued) Device Power-Up The device power pin (AVCC) can be supplied by the battery or the adapter. If AVCC voltage falls below UVLO threshold, the device remains disabled. If AVCC voltage exceeds UVLO threshold, the device is enabled and another comparator (charger sleep comparator) checks the AVCC voltage to identify the power source. If the adapter is detected and the AVCC voltage exceeds the SRN voltage (battery voltage), the charger exits the sleep mode and can be enabled for charging. If the AVCC voltage is lower than SRN, the charger enters the low quiescent current sleep mode to minimize power taken from the battery. In the sleep mode, the STAT pin goes to high-impedance state and VREF output is turned off. AVCC Input Under-Voltage Lockout (UVLO) Usually the system cannot properly operate if AVCC voltage is too low (under-voltage). Therefore the device is enabled until AVCC voltage exceeds a minimum level (UVLO). All circuits on the IC are disabled if AVCC falls below UVLO threshold, regardless of the source of power. Input Over-Voltage/Under-Voltage Protection The SGM41526 and SGM41527 provide over-voltage (OV) and under-voltage (UV) protections to avoid system damage due to high or low input supply voltage. The input is qualified if input voltage is within the UV and OV window. The ACOV and ACUV comparators monitor the OVPSET voltage. If it exceeds 1.6V (for OV) or falls below 0.494V (for UV), the charge will be disabled and both input switches (Q1 and Q2) will be turned off to disconnect the system from the power supply. A resistor divider from input source can be used to define the input qualification window. Unlike UVLO that acts on AVCC (powered from input supply or battery), the OV and UV protections act only on the input power supply. Charge Enable and Disable If all following conditions are fulfilled, a charge will be started: • VISET > 120mV (enable charge). • VAVCC > VUVLO (device not in UVLO). • VAVCC > VSRN (charger not in sleep mode). • 0.494V < VOVPSET < 1.6V (qualified power input). • Not in Thermal Shutdown (TSHUT). • No TS fault (battery temperature not too hot or cold). • Detect battery presence. • ACFET is turned on. • TTC or pre-charge timers are not expired. SG Micro Corp www.sg-micro.com • REGN and VREF pins are at their normal voltage levels without overloading. The device remains charging until the battery is fully charged (normal termination), unless the charge is disabled when VISET < 30mV or when any of the above conditions is not fulfilled during the charge. Power Path Selection The SGM41526 and SGM41527 can automatically select the input adapter or battery as power source for the system. By default, the system is powered from the battery during device power-up or in sleep mode. The device can exit sleep mode if a qualified adapter is plugged in. Then the BATFET is turned off and the back-to-back MOSFET pair on the power input is turned on with a protective break-before-make logic so that system is connected to adaptor. The ACFET turns on after 10μs dead time when BATFET is turned off, so that it avoids direct input to battery short that can cause over-current through the selector switches. Both gates of the back-to-back MOSFET pair on the power input are driven by the ACDRV pin. The sources are connected together to the CMSRC pin (Figure 1). The drain of the RBFET (Q2) is connected to the ACP pin. Q2 is for reverse discharge protection to avoid current flow from the battery to the input source. Low RDS(ON) switches are recommended for Q1 and Q2 to minimize conduction losses and heat generation. ACFET (Q1) can control the connection of adapter to system and battery. This switch also limits the inrush current rise/fall rate (di/dt) when input adapter is connected to the system by controlling the turn-on time. The BATFET (P-channel, Q3) controls the connection of battery and system. Its gate is driven by nBATDRV pin and its source is connected to system. The ACFET remains off, as long as a qualified voltage is not detected, by applying zero gate-source voltage. ACFET separates the adapter from system. If the device is not in UVLO and system voltage is at most 0.18V above the battery, the BATFET remains on by applying -5.9V to the gate-source through the nBATDRV pin (gate voltage clamps to ground if the system voltage is less than 5.9V). The conditions can be represented as: • VAVCC > VUVLO (not in UVLO). • VACN < VSRN + 180mV. The source pin of the BATFET is connected to the system, ACN pin and PVCC. JULY 2022 17 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector DETAILED DESCRIPTION (continued) If the input voltage is qualified and AVCC voltage is at least 0.21V above SRN (battery), the device can exit the sleep mode and transfer the system from battery to adapter. With the break-before-make logic, there is a 10μs dead time between input MOSFET pair and BATFET. At first the BATFET is turned off to disconnect battery from system by pulling up the nBATDRV voltage to ACN pin. Then the ACFET is turned on with a 5.6V gate drive voltage between the ACDRV and CMSRC pins, which is provided by an internal charge pump. The conditions for connecting the adapter to the system can be represented as follows: • VACUV < VOVPSET < VACOV. • VAVCC > VSRN + 210mV. When any of above conditions is no longer valid, ACFET is turned off and the device enters the sleep mode. BATFET remains off until the system voltage falls close to SRN (battery voltage). Then the BATFET turns on and connects the battery and system. An internal regulator drives nBATDRV pin to ACN - 5.9V to turn on BATFET. Asymmetrical gate driving is used for fast turn-off and slow turn-on of the ACFET and BATFET. This will allow smooth transitions and soft connection of the system to the supply line. Turn-on delay can be increased by adding capacitance between the gate and source of the switches. Charge Converter The charge converter in SGM41526/7 is a 1.6MHz PWM step-down regulator. The fixed switching frequency makes the filter design simple under all input/output or temperature conditions. Pulse skipping occurs if the duty cycle is approximately 97%. A type III compensation network is designed inside so that the use of low ESR ceramic capacitors on the output is allowed. The compensated error amplifier output is compared with 1.6MHz sawtooth ramp voltage to generate PWM wave. The sawtooth amplitude is proportionally adjusted to the AVCC voltage (input feedforward) to compensate the impact of the input voltage variations on the loop gain and simplify the loop compensation. SG Micro Corp www.sg-micro.com Internal Charge Current Soft-Start The charge current automatically soft starts when fast charge mode begins to limit the stress on the converter components due to the current overshoots. During the soft-start, a total of 8 current levels are available for the programmed regulation current with an evenly spaced step. Each step lasts almost 1.6ms, for a typical soft-tart rise time of 12.8ms. This function is designed inside the device and no external components are required. Charge Over-Current Protection The high-side MOSFET current in the converter is always monitored by a sense FET and if it exceeds the MOSFET current limit (typically 10A), the high-side MOSFET is turned off until the next cycle. There is another over-current protection for charge current. When it exceeds 180% of the programmed value, the high-side MOSFET is also turned off until the current falls below the threshold. Charge Negative Current Protection When the battery is charged, the inductor current reduces and may become negative. This negative current means that the battery feeds energy to input through converter (it is called Boost effect). The Boost effect can cause over-voltage on the input circuit and AVCC, which can damage the input components, device itself and the system. To prevent the boosting and negative charge current, the low-side switch should be turned off before the current drops to zero. The device senses the charge current by the voltage of the SRP-SRN, and if it falls below 5mV, the low-side switch is turned off for the rest of the switching cycle. This leads to discontinuous conduction mode (DCM) operation of the converter. Keeping low-side switch off limits the charging of bootstrap capacitor that feeds the high-side switch gate driver. A comparator always checks the high-side driver supply voltage, and if it falls below 2.8V the low-side switch is turned on for a short period to refresh and recharge the bootstrap capacitor voltage. This protection overrides the negative charge current protection. JULY 2022 18 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector DETAILED DESCRIPTION (continued) Battery Detection SRN voltage falls below recharge threshold. If the battery voltage does not fall below the battery LOWV threshold in 1s, the battery is detected as present so the 9.5mA sink is turned off and the charge starts. During the 1s period, the 9.5mA discharge current is disabled as long as the battery voltage falls below battery LOWV threshold. Then the converter generates a small charge current to charge the SRN pin. The charge current is 250mA typically with 10mΩ sense resistor. Now, if 0.5s timer times out and the battery voltage exceeds the recharge threshold, the detection is no-battery and the process will restart from beginning to detect insertion of the battery. If after the 0.5s period, the voltage does not exceed the recharge voltage threshold, the battery is detected as present and the proper charging phase will start. Battery presence detection is important and specially needed for the applications with removable batteries. The SGM41526 and SGM41527 use a reliable detection method for battery absence, battery insertion and battery removal. This detection procedure runs during power-up or when the battery voltage is lower than the recharge threshold. A low voltage on SRN pin (that connects to battery) can be detected due to battery discharge or battery removal. The detection process is designed such that the large capacitors on the charger output are not detected as battery. The detection flow chart is given in Figure 4. Battery detection starts by applying a 9.5mA sink current though the SRN pin to the battery at power-up or when the POR or Recharge Apply 9.5mA discharge current, start 1s timer VFB < VLhWV NO 1s timer expired YES YES Disable 9.5mA discharge current Battery Present, Begin Charge NO Enable 250mA charge current, start 0.5s timer 0.5s timer expired VFB > VRECH NO Battery Present, Begin Charge YES Disable 250mA charge current Battery Absent Figure 4. SGM41526 and SGM41527 Battery Detection Flow Chart Battery Absent Battery Absent VBAT_REG VRECH Battery Present VLOWV Figure 5. Timing of the Battery Insertion Detection SG Micro Corp www.sg-micro.com JULY 2022 19 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector DETAILED DESCRIPTION (continued) Note that the total output capacitance that appears parallel to the battery should not be too large such that with the applied sink or charge currents and timing the no-battery voltage changes fast and passes the detection thresholds within 1s or 0.5s periods. Equations 7 and 8 can be used to calculate the maximum output capacitances: CMAX = CMAX = IDISCH × tDISCH ( 4.1V - 2.9V ) × NCell (for SGM41526) IDISCH × tDISCH (for SGM41527)  R  ( 2.03V - 1.46V ) ×  1 + 1   R2  (7) (8) where CMAX = maximum output capacitance. IDISCH = discharge current. tDISCH = discharge time. NCell = number of cells in the battery. R1 and R2: FB pin feedback resistors from the battery. 9.5mA × 1s = 2.8mF 500kΩ   0.57V ×  1 +  100kΩ   Battery Short Protection During charge, if the battery voltage sensed on the SRN pin falls below 2V threshold, the battery is considered in short condition. The charge will quickly stop for a 1ms period followed by a soft-start toward the pre-charge current level to prevent over-current and saturation of the inductor. In battery short condition, the charger operates in nonsynchronous mode. Battery voltage is continuously monitored for over-voltage protection. If the sensed voltage exceeds 104% of the regulation voltage, the converter high-side switch remains off. This protection reacts in one cycle. The over-voltage may occur due to a battery disconnection or load removal. The stored energy in the output capacitors is discharged by sinking a total of 6mA current through SRP and SRN pins to SG Micro Corp www.sg-micro.com Battery temperature is continuously monitored by measuring the voltage between the TS pin and AGND that is sensed by a NTC (negative temperature coefficient) thermistor attached to the battery pack. A resistor divider from VREF is used to adjust the temperature limits. The voltage of TS pin is compared with internal thresholds and charge process will not begin until the TS pin voltage (which indicates battery temperature) is within the VLTF to VHTF window. If during charge the battery get too hot or too cold and temperature goes out of the allowed range, the charge will suspend by turning off PWM switches. The charge resumes automatically if the temperature returns to the allowed window. VREF VLTF VLTFH (9) Therefore, the total capacitance on the battery node should be less than 2800μF. Battery Over-Voltage Protection Battery Temperature Qualification Figure 6 illustrates the temperature qualification function and the thresholds for the charge initiation, suspension and recovery. Example: For a 3-cell Li+ charger (12.6V battery voltage regulation), with R1 = 500kΩ, R2 = 100kΩ, IDISCH = 9.5mA and tDISCH = 1s, the maximum allowed capacitance is: CMAX = AGND. The charge will be disabled if the over-voltage condition is not cleared for more than 30ms. Temperature Range to Initiate Charge Temperature Range during a Charge Cycle Charge Suspended Charge Suspended Charge at full C Charge at full C Charge Suspended Charge Suspended VHTF AGND VREF VLTF VLTFH VTCO AGND Figure 6. Battery Temperature Qualification Function and Thresholds on the Sensed TS Pin Voltage The TS pin resistor divider (Figure 7) can be calculated based on the hot and cold temperature levels recommended for the battery by Equation 10 and Equation 11: RT2  1 1  VVREF × RTHCOLD × RTHHOT ×   V V TCO   LTF = V  V  RTHHOT ×  VREF - 1 - RTHCOLD ×  VREF - 1  VLTF   VTCO  RT1 VVREF -1 VLTF = 1 1 + RT2 RTHCOLD (10) (11) JULY 2022 20 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector DETAILED DESCRIPTION (continued) Using a 103AT type NTC thermistor in the battery pack and selecting TCOLD = 0℃ and THOT = 45℃ range for Li-Ion or Li-polymer battery, and recalling the NTC resistances at temperature limits from datasheet: RTHCOLD = 27.28kΩ (103AT NTC resistance at 0℃) RTHHOT = 4.911kΩ (103AT NTC resistance at 45℃) The resistors can be calculated as: RT1 = 5.29kΩ RT2 = 32.12kΩ The actual temperature range can be calculated based on the selected standard resistor values and NTC actual characteristics. VREF SGM41526/7 If a charge timer fault occurs, the device recovery process will depend on the battery voltage as follows. Case 1: If VBAT exceeds the recharge threshold when the time-out fault occurs, the charge will be suspended firstly. When the battery voltage falls below recharge threshold, the battery detection begins again, and then the timer fault is cleared. The fault will also clear by a power-on-reset (POR) or by pulling the ISET voltage below 30mV. Case 2: If VBAT falls below the recharge threshold when the timer fault occurs, a small charge current is applied to detect the battery removal at first. The small charge current is not removed until VBAT exceeds the recharge threshold. Then the small charge current is disabled. The rest of recovery process is as explained in case 1. Design of the Inductor, Capacitor and Sense Resistor RT1 For the charger internal compensation, the best stability is achieved if the LC filter resonant frequency (fO) given in Equation 12 is approximately between 15kHz and 25kHz: TS RT2 Recovery from Timer Fault RTH 103AT fO = 1 (12) 2π LC Some typical LC values for various charge currents are given in Table 2. Figure 7. Battery Pack Temperature Sensing Network MOSFET and Inductor Protection in Short Circuit Condition The SGM41526 and SGM41527 provide cycle-by-cycle short circuit protection by monitoring the voltage drop across RDS(ON) of the MOSFETs. If a short is detected, the charger will be latched off, which means the Buck converter is disabled but the ACFET will not be turned off, and system is still connected to the adaptor. Latch-off state can only be removed by unplugging and re-plugging the input power (adapter). The LED connected to STAT pin blinks at this condition. Thermal Regulation and Shutdown The low thermal impedance of the TQFN package provides good cooling for the silicon. When the junction temperature exceeds +120℃, the thermal regulation is triggered. Then the device will decrease charge current to reduce internal heat generation. Moreover, if the junction temperature exceeds the shutdown level (TSHUT = +150℃), charger is turned off and will not resume until TJ falls below +130℃. SG Micro Corp www.sg-micro.com Table 2. LC Typical Values vs. Designed Charge Current Charge Current 1A 2A 3A 4A Output Inductor L 6.8µH 3.3µH 3.3µH 2.2µH Output Capacitor C 10µF 20µF 20µF 30µF STAT Charge Status Output STAT is an open-drain output that indicates the charger status as explained in Table 3. This pin can be used for driving LEDs or informing the host about charge status. Table 3. STAT Output Pin States Charge State STAT Transistor Charge in Progress (including Recharging) ON Charge Completed, Sleep Mode, Charge Disabled OFF Charge Suspend, Input Over-Voltage, Battery Over-Voltage, Timer Fault, Battery Absent BLINK JULY 2022 21 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector DETAILED DESCRIPTION (continued) The SGM41526 and SGM41527 are stand-alone switching chargers and power path selectors. They operate from a qualified adapter or DC supply system. This device is capable of providing dynamic power management (DPM mode) to reduce the input loading by sharing the load with the battery on the peak system demands. Because of DPM capability, the adaptor size and power rating can be reduced effectively for the systems with highly dynamic loads. The gate drive pins for power path selector switches (ACDRV and CMSRC) control the input NMOS pair, ACFET (Q1) and RBFET (Q2). The nBATDRV pin controls the gate of the battery connection PMOS switch (Q3). If the input (adapter) is qualified, system will be connected to the input by turning Q1 and Q2 on. Otherwise, Q3 will be turned on then the system is powered from battery. Moreover, the battery cannot feed back to the input with power path selection control. DPM capability is included in the SGM41526 and SGM41527 to limit maximum power taken from the input (adapter) by reducing the charge current when the system power demand is high. Input current is accurately sensed to monitor power usage. Without DPM, the adapter must be designed to provide maximum charge power plus maximum system power. However, with DPM, the adapter can be designed for significantly lower power rating that reduces the size and cost of the adapter. SG Micro Corp www.sg-micro.com The SGM41526 and SGM41527 can operate independently. However, some pin settings can be adjusted by an external controller (like ISET or ACSET). This allows the implementation of ″battery learn mode″ for applications with dynamic charging conditions. Figure 8 shows the typical efficiency of a 4A charger for a 2-cell application. 100 VIN = 15V, 2 Cells VBAT = 7.6V 95 Efficiency (%) Device Functional Modes 90 85 80 75 70 0 1000 2000 3000 4000 Charge Current (mA) Figure 8. Typical Charge Efficiency JULY 2022 22 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector APPLICATION INFORMATION Design Requirements SGM41526 and SGM41527 can be used in portable applications with up to 4-cell Li-Ion or Li-polymer batteries. The SGM41526 accurately regulates the battery voltage at a fixed 4.2V/cell value (minimum 2 cells) and with low leakage from battery. Number of cells is programmable by CELL pin. For the applications that need custom battery regulation voltage or use only one cell, the SGM41527 can be used. In this variant, the battery regulation voltage is adjustable through the FB pin similar to a conventional voltage regulator. Figure 9 shows a typical application circuit of the SGM41526 with a 2-cell battery (8.4V). As an example to explain the design procedure, suppose that a charger is needed with the parameters listed in Table 4. Table 4. Design Requirements For power input, an adapter or power supply from 4.5V to 22V is needed generally. The minimum voltage range depends on the number of battery cells. Typically, the adapter current rating should be 500mA and higher. 12V Adapter Input IIN Q1 VIN RIN 2Ω CIN 2.2μF C13 4.7nF 18V (MAX) Charge Current 4A (MAX) VSYS R7 100kΩ SGM41526 R1 10Ω AVCC VREF R2 232kΩ Q3 L 3.3μH ISET ACSET Floating R10 1.5kΩ D3 CELL Thermal STAT Pad (AGND) RSR 10mΩ C5 0.047μF C8 0.1μF BTST PGND TTC VBAT C9 10μF C10 10μF IBAT C6 1μF C7 0.1μF SRP SRN TS System R14 1kΩ D4 REGN IOUT C4 10μF SW OVPSET R3 32.4kΩ R5 22.1kΩ 600mA (MIN) Battery Voltage ACDRV VREF C2 1μF Input Current DPM Limit The maximum battery voltage shows that a 4-cell battery is considered in the design. C1 1μF R4 100kΩ 4.5V to 22V C12 0.1μF R12 ACN PVCC ACP 4.02kΩ CMSRC nBATDRV R6 1MΩ D2 Input Voltage Range C11 0.1μF R15 C14 47nF 499kΩ R11 4.02kΩ VBAT Example Value RAC 10mΩ Q2 D1 Parameter VREF RT 103AT R8 5.23kΩ C3 0.1μF R9 30.1kΩ NOTE: 12V input, 2-cell battery 8.4V, 2A charge current, 0.2A pre-charge/termination current, 3A DPM current, 17.6V input OVP, 0℃ to 45℃ TS. Figure 9. Typical SGM41526 Schematic for a 2-Cell Battery Application SG Micro Corp www.sg-micro.com JULY 2022 23 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector APPLICATION INFORMATION (continued) Inductor Selection Small inductors and capacitors can be used in this design due to the high switching frequency of the device (fSW = 1.6MHz). The inductor should not saturate at the highest current that occurs at maximum charge current plus half peak value of the ripple current as given in Equation 13: ISAT ≥ ICHG + (1/2)IRIPPLE (13) where ICHG is the charging current, and IRIPPLE is the ripple current magnitude (peak-to-peak of the AC component). Except for light loads, the inductor current is continuous and the IRIPPLE is determined by the following equation: IRIPPLE = VIN × D (1- D ) fS × L (14) where VIN is the input voltage, D = VOUT/VIN is duty cycle, and L is the inductance value. Usually the highest ripple current is generated when duty cycle is equal to or near 0.5. Inductor current ripple is typically chosen to be 20% to 40% of the full load DC current to get a reasonable compromise between inductor size and AC losses. Higher ripple results in smaller inductor but with lower efficiency. The highest input voltage and charge current ranges should be considered for inductor design. Consider 30% ripple for this design (IRIPPLE ≤ 0.3ICHG): 0.3 × 4A ≥ 22V × 0.5 × (1- 0.5 ) 1.6MHz × L (15) Or L ≥ 2.9μH. The initial tolerance of the commercial inductors is usually quite large (typically 10% - 20% and in some cases as high as 30%). The inductance also drops with higher currents (typically in the order of 20% at maximum current). Therefore, a good margin must be considered for selection of the inductor value by consideration of the initial tolerance, thermal and maximum current drops from the inductor datasheet. For this example, a 3.3μH inductor is considered. L = 3.3μH (nominal value of the inductor) The minimum inductor saturation current from Equation 13 is:  1 ISAT ≥ 4A +   × 0.3 × 4A → ISAT ≥ 4.6A 2 Inductor core type and form factor can be designed based on the required size, loss, magnetic noise coupling, cost, stock availability and reliability considerations. SG Micro Corp www.sg-micro.com Input Path Capacitors The input capacitors carry two types of AC currents: (1) the converter switching ripple currents and (2) the high frequency (HF) transient currents of the switching. High frequency decoupling capacitors are necessary to prevent voltage ringing due to HF currents. Usually some bulk capacitance is needed to avoid large input rail voltage ripples. Typically, a ceramic capacitor placed close to the switching leg (PVCC and PGND) is sufficient to circulate the switching frequency and high frequency AC currents. This capacitor needs to have low ESR and ESL. The capacitor self-resonance frequency should be selected well above switching frequency. Otherwise, it will not be able to bypass HF switching transient currents and large ringing noise may be seen on the PVCC. A combination of smaller size and larger size capacitors may be used for better noise suppression. Stable ceramic capacitors such as X5R or X7R are recommended. All capacitors should be able to carry the peak RMS current of the ripples. Input capacitor ripple current (ICIN) can be calculated from Equation 16: ICIN = ICHG × D × (1- D ) (16) The highest ripple occurs at D = 0.5 and the worst case RMS ripple current is 0.5ICHG (2A for this example). Due to the capacitance drop at higher DC voltage bias and aging, a good margin should be considered for selection of the capacitor voltage rating. For a 20V maximum input, a 25V capacitor works. However, a 35V or higher voltage capacitor is recommended. For a high current (3A ~ 4A) charger, a minimum of 20μF input capacitance is recommended. For lower currents (1A or less), 10μF capacitance is sufficient. Output Capacitor Selection Applying a charge current with high ripple will deteriorate the battery lifetime and generate extra loss and heat. Therefore, it is important to bypass the inductor ripple using output capacitors and to keep the voltage ripple low, allowing only the DC current to flow and charge the battery. The output capacitors should have enough RMS current rating to carry the worst-case current ripples. The output RMS current (ICOUT) can be calculated as: ICOUT= IRIPPLE 2× 3 ≈ 0.29 × IRIPPLE (17) The output ripple is given by Equation 18:  V  V ∆VO =OUT 2  1- OUT  8LCfS  VIN  (18) JULY 2022 24 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector APPLICATION INFORMATION (continued) The ripple can be reduced by decreasing the cut-off frequency of the LC filter ( fr = 1 2π LC ). The SGM41526 and SGM41527 internal loop compensator is designed for a cut-off frequency of 15kHz to 25kHz. Therefore, in order to achieve good loop stability, select the output capacitor such that LC filter cut-off frequency is in the specified range. Stable ceramic capacitors (like X5R or X7R) are recommended with enough margin for the rated voltage (25V or higher). Selecting COUT = 20μF (two parallel 10μF) will result in fr = 19.6kHz with the selected L = 3.3μH inductor. equivalent ESR for damping of hot plug-in spikes. Ri and Ra should have sufficient package size and power rating to dissipate inrush current losses without overheating. A final test is recommended to assure all requirements are satisfied in the worst conditions and to make the necessary adjustments. D1 Adapter Input Input Filter Design Most portable applications must be able to handle hot adapter plug-in and removal. The parasitic line inductance of the adapter and the input capacitors of the charger form a second-order LC circuit that may create a transient over-voltage on the AVCC and damage the device. So careful design of the input filter with proper damping is important to assure the voltage peaks are well below the device limit. A common method is using a high ESR electrolytic input capacitor to damp the over-voltage spike. A TVS Zener diode with high current capability may also be used on the AVCC pin to clamp the transient peaks. If a more flexible and compact solution is needed, the input filter shown in Figure 10 can be used. In this network, RiCi filter damps the hot-plug oscillations and limits the over-voltage spikes to a safe level. D1 provides reverse voltage protection if a reverse polarity adapter is mistakenly connected or when the battery is also feeding AVCC. Ca is the decoupling capacitor of the AVCC that is placed right beside the AVCC and AGND pins. RaCa filter provides more damping and reduction of the dv/dt and magnitude of voltage spike. Ra also serves as a current limiter. Ca is typically less than the Ci, so Ri dominates in the total Q1 ADAPTER RIN 2Ω CIN 2.2μF Ca 0.1μF ~ 1μF AGND Low RDS(ON), N-type MOSFETs are used for ACFET(Q1) and RBFET(Q2) as shown in Figure 11. Due to the relatively large amount of capacitance on the system power rail, PVCC and charger output, a large inrush current can flow in the switches if it is not managed properly. Slow turn-on of Q1 can reduce the inrush current. MOSFETs with relatively large drain-gate and gate-source parasitic capacitances (CGD and CGS) have slower turn-on time. External capacitors may be used if Q1 turn-on is not slow enough. As an example, external CGD = 4.7nF and CGS = 47nF can be used across Q1. Current and power rating of these switches should be selected with good margin compared to the maximum current from the adapter. RSNS SYS C4 1μF R12 4.02kΩ R11 4.02kΩ Ci 2.2μF AVCC Selecting Input Switch Pair (ACFET and RBFET) RGS 499kΩ CGD Ra 4.7Ω ~ 30Ω (1206) Figure 10. Input Filter Q2 CGS Ri 2Ω (2010) CSY S 40μF PVCC CMSRC ACDRV Figure 11. External Capacitors to Slowdown Q1 Turn-On and Limit Inrush Current SG Micro Corp www.sg-micro.com JULY 2022 25 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector APPLICATION INFORMATION (continued) Design Examples IIN 20V Adapter Input RAC 20mΩ RevFET Q4 VIN C11 0.1μF R12 4.02kΩ VSYS C12 0.1μF SGM41526 R11 5Ω AVCC C1 1μF BTST VREF R2 100kΩ ACSET R5A 32.4kΩ R10 1.5kΩ D3 Thermal Pad STAT (AGND) C9 10μF C8 0.1μF C10 10μF IBAT C6 1μF PGND C7 0.1μF SRP SRN CELL VBAT D2 Optional ISET R3 32.4kΩ RSR 10mΩ C5 0.047μF D1 REGN VREF ILIM_500mA SW OVPSET R7 78.7kΩ R5B 8.06kΩ L 3.3μH ACDRV R6 1MΩ C2 1μF System C4 10μF PVCC ACN ACP CMSRC nBATDRV R11 4.02kΩ R4 100kΩ IOUT RT 103AT VREF R8 6.81kΩ TS R9 133kΩ TTC NOTE: Adapter input 20V OVP 22V, up to 4A charge current, 0.4A pre-charge current, 2A adapter current or 500mA USB current, 5℃ to 40℃ TS, system connected before sense resistor. Figure 12. Typical Application Schematic with 4-Cell Unremovable Battery (OVP 20V) 15V Adapter Input Q1 VIN IIN RIN 2Ω CIN 2.2μF RAC 10mΩ Q2 C11 C12 0.1μF 0.1μF R12 ACN PVCC ACP 4.02kΩ CMSRC nBATDRV R13 C14 47nF 499kΩ C13 4.7nF R11 4.02kΩ R7 49.9kΩ Battery Learn VREF Learn R15 FB + 599kΩ OVPSET C5 0.047μF BTST SGM41527 PGND D1 RSR 10mΩ C8 0.1μF VBAT C9 20μF C10 10μF R1 499kΩ C6 1μF IBAT R2 100kΩ C7 0.1μF SRP D2 R17 10Ω VREF R4 100kΩ AVCC C1 1μF SRN VREF R18 100kΩ ISET R19 32.4kΩ C2 1μF Q3 L 2.2μH SW REGN R16 499kΩ VBAT R14 1kΩ D4 R10 49.9kΩ System C4 10μF ACDRV R6 499kΩ IOUT VSYS R3 1.5kΩ D3 Thermal Pad STAT (AGND) R8 5.23kΩ TS ACSET R5 32.4kΩ VREF FB TTC C3 0.1μF RT 103AT R9 30.1kΩ NOTE: 15V input, 3-cell battery 12.6V, 4A charge current, 0.4A precharge/termination current, 4A DPM current, 0℃ to 45℃ TS. Figure 13. A Typical 3-Cell Application Schematic with Battery Learn Function SG Micro Corp www.sg-micro.com JULY 2022 26 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector APPLICATION INFORMATION (continued) 5V Adapter Input IIN VSYS VIN IOUT System C4 10μF ACN ACP CMSRC SW OVPSET R7 100kΩ SGM41527 R11 5Ω REGN VREF R5B 12.1kΩ PGND ISET SRP SRN R5A 12.1kΩ FB ILIM_500mA TS ACSET R10 1.5kΩ D3 STAT C5 0.047μF D1 BTST AVCC C1 1μF R4 Selectable 100kΩ Current Limit C2 1μF L 3.3μH ACDRV R6 400kΩ VREF PVCC nBATDRV Thermal Pad (AGND) TTC RSR 20mΩ C8 0.1μF D2 VBAT C9 10μF C10 10μF R1 100kΩ C6 1μF IBAT R2 100kΩ C7 0.1μF VREF R8 5.23kΩ RT 103AT R9 30.1kΩ NOTE: USB with 8V input OVP, 900mA or 500mA selectable charge current limit, 0℃ to 45℃ TS, system connected after sense resistor. Figure 14. Typical Application Schematic with Single-Cell Unremovable Battery Layout Guidelines A good PCB layout is critical for proper operation of the switching circuits. A list of important considerations for SGM41526 and SGM41527 layout design are provided here: 1. The switching node (SW) creates very high frequency noises several times higher than fSW (1.6MHz) due to sharp rise and fall times of the voltage and current in the switches. To reduce the ringing issues and noise generation, it is important to minimize impedance and loop area of the AC current paths. A graphical guideline for the current loops and their frequency content is provided in Figure 15. 2. Input and other decoupling capacitors must be placed as close to the device pin and ground as possible with the shortest copper trace and on the same layer of PCB. 3. Surface area of the SW node should be minimized to reduce capacitive HF noise coupling. Use a short and wide track connection to the inductor on the same layer of PCB. Keep sensitive and high impedance traces away from switching node and trace. 4. Place the charge current-sense resistor right next to the inductor and use the same layer of PCB for routing them to the device amplifier input while keeping them close together and away from high current paths. Figure 16 shows the proper Kelvin connection of shunt resistors for accurate current sensing. Use decoupling SG Micro Corp www.sg-micro.com capacitors at the point of connection to the device (between sense traces and between one of them and AGND). 5. Output capacitors should be placed right next to the sense resistor. 6. Keep input and output capacitor ground returns tied together and on the same layer before connecting them to the device PGND. Having all of them connected in a small geometric area right beside the device is highly recommended. 7. Keep AGND separated from PGND and connect them only in a single point under the device body and connect it to the thermal pad. Use AGND copper pour only under the device. A 0Ω resistor can be used for single point connection of AGND and PGND. Make connections to AGND with star geometry. 8. For proper cooling of the device, use several thermal vias connecting the thermal pad pour to the GND plane on the opposite side and other layers of the PCB. Use enough solder for thermal pad connections. Open via holes allow solder to penetrate to the other side and provide low thermal resistance. Apply solder to the opposite side thermal ground for better connection to the vias and better thermal cooling. Thermal ground should not be connected to PGND planes. 9. Remember that vias add some parasitic impedance (resistive/inductive) to the trace. So, it is generally recommended to avoid vias in the sensitive or high frequency paths. JULY 2022 27 SGM41526 SGM41527 1.6MHz Synchronous Li-Ion/Li-Polymer Stand-Alone Battery Chargers with Automatic Power Path Selector APPLICATION INFORMATION (continued) L SW DC IN HF Noise Coupling Current Path for Ripple Current (Switching Frequency and the Low Order Harmonics) Current Path Containing Very High Frequency and Switching Frequency CIN (IAC ≈ 0) BAT C PGND Keep these PGND points close together Figure 15. Graphical Representation of the Switching and Transient Current Loops, and Capacitive Noise Coupling from SW Node Current Direction RSNS Current Sensing Direction To SRP and SRN Pin Figure 16. Sensing Resistor PCB Layout REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (JULY 2022) to REV.A Page Changed from product preview to production data .................................................................................................................................................All SG Micro Corp www.sg-micro.com JULY 2022 28 PACKAGE INFORMATION PACKAGE OUTLINE DIMENSIONS TQFN-5.5×3.5-24L e1 k D N1 N24 N2 N23 D1 E1 E e N12 N13 b b1 L TOP VIEW BOTTOM VIEW 4.1 2.7 0.70 2.05 A SIDE VIEW A1 A2 4.7 4.05 0.5 0.25 1.5 6.1 0.20 RECOMMENDED LAND PATTERN (Unit: mm) Symbol Dimensions In Millimeters MIN MAX Dimensions In Inches MIN MAX A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A2 0.203 REF 0.008 REF D 3.400 3.600 0.134 0.142 D1 1.950 2.150 0.077 0.085 E 5.400 5.600 0.213 0.220 E1 3.950 4.150 0.156 0.163 k 0.325 REF 0.013 REF b 0.200 0.300 0.008 0.012 b1 0.150 0.250 0.006 0.010 L 0.300 0.500 0.012 0.020 e 0.500 BSC 0.020 BSC e1 1.500 BSC 0.059 BSC SG Micro Corp www.sg-micro.com TX00122.000 PACKAGE INFORMATION TAPE AND REEL INFORMATION REEL DIMENSIONS TAPE DIMENSIONS P2 W P0 Q1 Q2 Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 Q3 Q4 B0 Reel Diameter A0 P1 K0 Reel Width (W1) DIRECTION OF FEED NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF TAPE AND REEL Reel Diameter Reel Width W1 (mm) A0 (mm) B0 (mm) K0 (mm) P0 (mm) P1 (mm) P2 (mm) W (mm) Pin1 Quadrant TQFN-5.5×3.5-24L 13″ 12.4 3.80 5.80 1.00 4.0 8.0 2.0 12.0 Q1 SG Micro Corp www.sg-micro.com TX10000.000 DD0001 Package Type PACKAGE INFORMATION CARTON BOX DIMENSIONS NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF CARTON BOX Length (mm) Width (mm) Height (mm) Pizza/Carton 13″ 386 280 370 5 SG Micro Corp www.sg-micro.com DD0002 Reel Type TX20000.000
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