IS456
IS456
s Features
1. High speed response ( t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package
High Speed Response Type OPIC Light Detector
s Outline Dimensions
0.4 - 0.3 0.1 2.5 ± 0.2
+
( Unit : mm )
3.81 ± 0.3
± 0.1
1 Detector center 2 2.75 ±0.2 4.4± 0.1 0.25
0.7 4
3
s Applications
1. Laser beam printers
s Absolute Maximum Ratings
Parameter *1 Supply voltage High level output voltage Low level output current Operating temperature Storage temperature *2 Soldering temperature Power dissipation R O terminal power dissipation *3 Incident light intensity *3 Radiant intensity Symbol V CC V OH I OL T opr T stg T sol P P RO PI Ee
( Ta= 25˚C)
Rating - 0.5 to + 7 7 20 - 25 to + 80 - 40 to + 85 260 150 24 5 60 Unit V V mA ˚C ˚C ˚C mW mW mW WB
( R0.2 )
2.7 -
+ 0.5 0
2.7 0.1
+ 0.5 0
5.0 ± 0.1
1.5
4.4±
0.5 - 0.3 0.2
1.07
5.0 ± 0.1 10˚ 10˚
0.15 - 0.3 0
Internal connection diagram
+
0.8 - 0.2 0.4
+
+
10˚
10˚
4 Gain resistor (Ro) ( Outer mounting ) 1 1 2 3 4 RO VO GND V CC
*1 For 1 minute *2 For 3 seconds at the position shown in the following drawing. *3 Maximum allowable incident light intensity and radiant intensity of laser beam ( λ = 780nm ) to the device.
Soldering area Soldering area
VREF
2 3
*“ OPIC” ( Optical IC ) is a trademark of the SHARP Corporation. An OPIC consists of a light-detecting element and signalprocessing circuit integrated onto a single chip.
s Electro-optical Characteristics
Parameter High level output voltage Low level output voltage High level supply current Low level supply current *4 “ High→Low ” threshold illuminance 1 *4 “ High→Low ” threshold illuminance 2 “ High→Low ” threshold incident light intensity
“ High→Low” propagation delay time “ Low→High” propagation delay time
( VCC = 5V, Ta= 25˚C )
Symbol V OH V OL I CCH I CCL E VHL1 E VHL2 P IHL t PHL t PLH tr tf CL =15pF, Duty=1: 1 P I=0.2mW, λ =780nm R O=5.1kΩ , R L =510Ω Conditions R O=51kΩ , E V=0 I OL =10mA, E V =1 000lx R O=51kΩ , E V =0 R O=51kΩ , E V =1 000lx R O=51kΩ R O=5.1kΩ R O=5.1kΩ , l =780nm MIN. 4.9 330 TYP. 0.4 2.6 3.8 470 5 800 100 230 230 60 20 MAX. 0.6 4.5 6.6 600 400 400 200 100 Unit V V mA mA lx lx µW ns ns ns ns
Response time
Rise time Fall time
*4 E
VHL
1, E
VHL
2 represent illuminance by CIE standard light source A( tungsten lamp ) when output goes from high to low.
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
IS456 s Recommended Operating Conditions
Parameter Operating supply voltage Operating temperature Incident light intentity ( λ = 780nm ) Symbol V cc T opr PI MIN. 4.5 0 MAX. 5.5 60 2.5 Unit V ˚C mW
In order to stabilize power supply line, connect a by-pass capacitor of 0.1µ F between Vcc and GND near the device.
Fig. 1 Total Power Dissipation vs. Ambient Temperature
250
Fig. 2 Low Level Output Voltage vs. Low Level Output Current
10 5 Low level output voltage V OL ( V ) V CC = 5V T a = 25˚C
Total power dissipation P ( mW )
200
2 1 0.5
150
100
50
0.2
0 - 25
1 0 25 50 75 100 1 2 5 10 20 50 100 Ambient temperature T a ( ˚C ) Low level output Current I OL ( mA )
Fig. 3 Low Level Output Voltage vs. Ambient Temperature
0.6 V CC = 5V 0.5 Low level output voltage VOL ( mA ) IOL= 20mA 10mA 0.4
Fig. 4 Supply Current vs. Supply Voltage
6 T a = 25˚C 5 Supply current I CC ( mA ) ICCL
4 ICCH
0.3
3
0.2
2
0.1
1
0 - 25
0 0 25 50 75 100 3 4 5 6 7 8 Ambient temperature Ta ( ˚C ) Supply voltage V CC ( V )
IS456
Fig. 5 Supply Current vs. Ambient Temperature
6 V CC = 5.0V “ High→Low” threshold incident light intensity P IHL ( µ W )
Fig. 6 “ High → Low ” Threshold Incident Light Intensity vs. Gain Resistanse
2000 1000 500 200 100 50 20 10 0 V CC = 5V T a = 25˚C
Supply current I CC ( mA )
4
I CCL
2
I CCH
0 - 25 0 25 50 75 100 Ambient temperature T a ( ˚C )
1
2
3
4
5
6
7
Gain resistance R O ( k Ω )
Fig. 7 “ High → Low ” Threshold Incident Light Intensity vs. Ambient Temperature
140 “ High→Low” threshold incident light intensity P IHL ( µ W ) V CC = 5.0V R O = 5.1kΩ
Fig. 8 “ High → Low ” Threshold Incident Light Intensity vs. Supply Voltage
200 T a = 25˚C R O = 5.1kΩ “ High→Low” threshold incident light intensity P IHL ( µ W ) 150
120
100
100
50
80 0 - 25 0 25 50 75 80 0 3 4 5 6 7 8
Ambient temperature T a ( ˚C )
Supply voltage V CC ( V)
Fig. 9 Propagation Delay Time vs. Incident Light Intensity
250 V CC = 5.0V R L= 510Ω T a = 25˚C RO : Dotted line
Fig.10 Propagation Delay Time vs. Gain Resistance
500 ( ns ) VCC = 5V, P I = 0.6mW RL= 510kΩ , T a = 25˚C 400 t PLH
( ns )
200
PHL
,t
PLH
PLH
150 t PHL 100 t PLH
,t 300 Propagation delay time t 200
Propagation delay time t
PHL
50
RO
100
t PHL
0 0
0.2
0.5
1.0
1.5
2.0
2.5
0 0
1
Incident light intensity P I ( mW )
2 3 4 Gain resistance R O ( kΩ)
5
6
IS456
Fig.11 Propagation Delay Time vs. Ambient Temperature
400 ( ns ) V CC = 5V, R O = 5.1KΩ R L = 510Ω t PLH Rise time, fall time t r , t f ( ns ) 300
Fig.12 Rise Time, Fall Time vs. Load Resistance
300 T a = 25˚C V CC = 5V tr 200
250
Propagation delay time t PLH , t
PHL
t PHL 200 t PLH
t PHL
150
100
100
50 tf 0 0
0 - 25
0
25
50
75
100
1
2
3
4
5
6
Ambient temperature Ta ( ˚C )
Load resistance R L ( K Ω )
Fig.13 Rise Time, Fall Time vs. Ambient Temperature
100 V CC = 5V, R O = 5.1KΩ RL = 510Ω 80 Rise time, fall time t r , t f ( ns )
Fig.14 Spectral Sensitivity
100 T a = 25˚C 80 Relative sensitivity ( % )
tr
60
60
40 tf 20
40
20
0 - 25
0
25
50
75
100
0 300 400
500
600
700
800
900
1000
1100
Ambient temperature Ta ( ˚C )
Wavelength λ ( nm )
IS456
Test Circuit for Response Time
Constant current 5.1 kΩ Laser diode Vref 0.1 µ F Output CL VCC = 5V 510 Ω
0.2mW 0.1mW Incident light intensity 0mW tPHL tPLH 90 % Output tf tr 1.5V 10 %
q Please refer to the chapter “Precautions for Use.”
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