PC12311NSZ

PC1231xNSZ Series PC1231xNSZ Series DIP 4pin Reinforced Insulation Type, High CMR, Low Input Current Photocoupler ■ Description ■ Agency approvals/Compliance PC1231xNSZ Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. CTR is 50% to 400% at input current of 0.5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC1231) 2. Approved by BSI, BS-EN60065, file No. 7087, BSEN60950, file No. 7409, (as model No. PC1231) 3. Package resin : UL flammability grade (94V-0) 4. Approved by SEMCO, EN60065, EN60950, file No. 9933036 (as model No. PC1231) 5. Approved by DEMCO, EN60065, EN60950, file No. 99-03814 (as model No. PC1231) 6. Approved by NEMKO, EN60065, EN60950, file No. P99102251 (as model No. PC1231) 7. Approved by FIMKO, EN60065, EN60950, file No. 13986 (as model No. PC1231) 8. Recognized by CSA file No. CA095323 (as model No. PC1231) 9. Approved by VDE, VDE0884 (as an option) file No. 83601, No. 134349 or No. 40005304(as model No. PC1231) ■ Features 1. 4pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. Low input current type (IF=0.5mA) 4. High resistance to noise due to high common rejection voltage (CMR : MIN. 10kV/µs) 5. Reinforced insulation type (Isolation distance : MIN. 0.4mm) 6. Long creepage distance type (wide lead-form type only : MIN. 8mm) 7. High isolation voltage between input and output (Viso(rms) : 5.0kV) ■ Applications 1. Primary to secondary isolation in switch mode power supply 2. Noise suppression in switching circuit 3. Signal transmission between circuits of different potentials and impedances 4. Over voltage detection Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02902EN Date Oct. 31. 2003 © SHARP Corporation PC1231xNSZ Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) Rank mark 1.2±0.3 Date code 3 4 1 2 3 1 4 2 2.54±0.25 SHARP mark "S" 7.62±0.3 2.7 ±0.1 0.26 3.5±0.5 Epoxy resin 3.4±0.5 3.5±0.5 3.4±0.5 ±0.5 Epoxy resin 4.58±0.3 0.5TYP. 4.58±0.3 7.62±0.3 VDE0884 Indenfication mark 0.26±0.1 0.5±0.1 ±0.1 0.5 θ θ θ θ : 0 to 13˚ θ : 0 to 13˚ 3. Wide Through-Hole Lead-Form [ex. PC1231xNFZ] ±0.2 1 2 3 1 3 ±0.1 4 1.0 ±0.3 ±0.3 4 4.58 0.6 ±0.3 4.58 2 ±0.25 1.0 6.5±0.3 3 2.54 1 2 3 1 Date code 1 ±0.3 4 ±0.1 2 1.2 ±0.2 0.6 SHARP mark "S" ±0.3 6.5 VDE0884 Indenfication mark ±0.3 7.62 4.58 ±0.3 ±0.3 4.58 2.7MIN. 3.5 3.5 ±0.5 ±0.5 7.62 2.7MIN. ±0.3 Date code 1 Factory identification mark Rank mark Anode mark ±0.25 Factory identification mark Rank mark Anode mark 1.2 4. Wide Through-Hole Lead-Form [ex. PC1231xYFZ] 2.54 θ Epoxy resin Epoxy resin ±0.1 ±0.1 0.26 0.26 ±0.5 10.16 0.5TYP. 6.5±0.3 2.7 6.5±0.3 3 ±0.5 2 Date code 1 4.58±0.3 4 1 2 3 1 Factory identification mark 2.54±0.25 0.6±0.2 Factory identification mark 1 Rank mark Anode mark 0.6±0.2 Anode mark 1.2±0.3 2. Through-Hole [ex. PC1231xYSZ] 4.58±0.3 1. Through-Hole [ex. PC1231xNSZ] ±0.5 ±0.1 10.16 0.5 ±0.1 0.5 Product mass : approx. 0.18g Sheet No.: D2-A02902EN 2 PC1231xNSZ Series (Unit : mm) 1 2 3 1 1.2±0.3 2 4 SHARP mark "S" 0.26 1.0+0.4 −0 Epoxy resin 7. Wide SMT Gullwing Lead-Form [ex. PC1231xNUP] 8. Wide SMT Gullwing Lead-Form [ex. PC1231xYUP] Rank mark Factory identification mark 10.16 1 2 3 1 3 0.6 2.54±0.25 4 6.5±0.3 SHARP mark "S" VDE0884 Indenfication mark 0.5±0.1 ±0.25 4.58±0.3 3.5±0.5 0.25±0.25 3.5±0.5 0.26±0.1 0.25 ±0.25 ±0.5 4 7.62±0.3 Epoxy resin 0.75 2 4.58±0.3 7.62±0.3 Date code 1 0.26±0.1 3 1.0 6.5±0.3 ±0.2 1.2±0.3 4.58±0.3 1 2 3 1 ±0.1 1.0±0.1 4 2.54±0.25 0.6±0.2 1.2±0.3 Date code 1 Factory identification mark Anode mark 4.58±0.3 Rank mark Anode mark ±0.25 2.54±0.25 1.0+0.4 −0 10.0+0 −0.5 10.0+0 −0.5 2 4.58±0.3 0.35±0.25 ±0.1 2.54±0.25 1.0+0.4 −0 VDE0884 Indenfication mark 7.62±0.3 3.5±0.5 0.35±0.25 4.58±0.3 Epoxy resin 3 6.5±0.3 7.62±0.3 0.26±0.1 4 1 3.5±0.5 6.5±0.3 1.0+0.4 −0 Date code 2.54±0.25 3 Factory identification mark 4.58±0.3 1 2 3 1 2 4.58±0.3 4 1 0.6±0.2 Rank mark Anode mark Factory identification mark Date code 0.6±0.2 1.2±0.3 Rank mark Anode mark 6. SMT Gullwing Lead-Form [ex. PC1231xYIP] 2.54±0.25 5. SMT Gullwing Lead-Form [ex. PC1231xNIP] Epoxy resin 0.75 0.75±0.25 12.0MAX 10.16±0.5 0.5±0.1 0.75±0.25 12.0MAX Product mass : approx. 0.18g Sheet No.: D2-A02902EN 3 PC1231xNSZ Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. Rank mark Refer to the Model Line-up table Sheet No.: D2-A02902EN 4 PC1231xNSZ Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation *2 Isolation voltage Viso (rms) Topr Operating temperature Tstg Storage temperature *3 Soldering temperature Tsol Rating 10 200 6 15 70 6 50 150 170 5.0 −30 to +100 −55 to +125 260 (Ta=25˚C) Unit mA mA V mW V V mA mW mW kV ˚C ˚C ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Common mode CMR rejection voltage Conditions IF=10mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω VCM=1.5kV(peak), IF=0 RL=470Ω, VCC=9V, Vnp=100mV MIN. − − − − 70 6 0.25 − 5×1010 − − − TYP. 1.2 − 30 − − − − − 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − 2.0 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs 10 − − kV/µs Sheet No.: D2-A02902EN 5 PC1231xNSZ Series ■ Model Line-up Lead Form Trough-Hole Wide Trough-Hole SMT Gullwing Wide SMT Gullwing IC [mA] Rank mark Sleeve Taping (I =0.5mA, VCE=5V, Ta=25˚C) Package F 100pcs/sleeve 2000pcs/reel VDE0884 − Approved − Approved − Approved − Approved − 0.25 to 2.0 PC12310NSZ PC12310YSZ PC12310NFZ PC12310YFZ PC12310NIP PC12310YIP PC12310NUP PC12310YUP with or without Model No. 0.5 to 1.25 PC12311NSZ PC12311YSZ PC12311NFZ PC12311YFZ PC12311NIP PC12311YIP PC12311NUP PC12311YUP A Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A02902EN 6 PC1231xNSZ Series Fig.1 Test Circuit for Common Mode Rejection Voltage (dV/dt) VCM RL 1) VCC Vnp  VCM : High wave  pulse   RL=470Ω  VCC=9V VCM VO (Vcp Nearly = dV/dt×Cf×RL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. Fig.3 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P (mW) Forward current IF (mA) Fig.2 Forward Current vs. Ambient Temperature 10 5 0 −30 0 25 50 75 100 Vnp Vcp 15 10 5 0 −30 125 0 200 150 100 50 0 25 50 75 50 75 100 125 Fig.5 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.4 Collector Power Dissipation vs. Ambient Temperature 0 −30 25 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) 0 25 50 75 100 125 Ambient temperature Ta (˚C) Sheet No.: D2-A02902EN 7 PC1231xNSZ Series Fig.7 Forward Current vs. Forward Voltage Fig.6 Peak Forward Current vs. Duty Ratio 100 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 2 000 500 200 100 50 10 Ta=25˚C Ta=100˚C Ta=0˚C Ta=75˚C 1 Ta=−25˚C Ta=50˚C 20 10 −3 5 10 2 −2 5 10 2 −1 5 10 0.1 2 1 5 0 0.5 Duty ratio 1.0 1.5 2.0 Forward voltage VF (V) Fig.8 Current Transfer Ratio vs. Forward Current Fig.9 Collector Current vs. Collector-emitter Voltage 40 500 Ta=25˚C PC (MAX.) 400 Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25˚C 300 200 30 IF=7mA 20 IF=5mA IF=3mA 10 IF=2mA 100 IF=1mA 0 0.1 0 1 0 10 2 4 6 8 10 Collector-emitter voltage VCE (V) Forward current IF (mA) Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 150 Relative current transfer ratio (%) IF=0.5mA VCE=5V IF=0.5mA 100 50 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) 0.16 IF=10mA IC=1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Sheet No.: D2-A02902EN 8 PC1231xNSZ Series Fig.12 Collector Dark Current vs. Ambient Temperature 100 VCE=50V VCE=2V, IC=2mA 10−6 10−7 Responce time (µs) Collector dark current ICEO (A) 10−5 Fig.13 Response Time vs. Load Resistance 10−8 10−9 tr 10 tf td ts 10−10 10−11 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 1 0.1 1 Ambient temperature Ta (˚C) Fig.14 Test Circuit for Response Time Fig.15 Frequency Response 5 VCC RL Output Input Output Input VCE=2V IC=2mA Ta=25˚C 0 10% Voltage gain AV (dB) RD 10 Load resistance RL (kΩ) VCE ts tf td tr 90% Please refer to the conditions in Fig.13. −5 RL=10kΩ 1kΩ −10 100Ω −15 −20 −25 0.1 1 10 100 1 000 Frequency f (kHz) Collector-emitter saturation voltage VCE (sat) (V) Fig.16 Collector-emitter Saturation Voltage vs. Forward Current 5 IC=7mA Ta=25˚C IC=5mA 4 IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 1 0 0 2 4 6 8 10 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02902EN 9 PC1231xNSZ Series ■ Design Considerations ● Design guide While operating at IF