PC354N

PC354N Series PC354N Series Mini-flat Package, AC Input Photocoupler ■ Description ■ Agency approvals/Compliance PC354N Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat package. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V(∗) and CTR is 20% to 400% at input current of ±1mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC354) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Hybrid substrates that require high density mounting. 2. Programmable controllers ■ Features 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. AC input type 4. High collector-emitter voltage (VCEO : 80V(∗)) 5. High isolation voltage between input and output (Viso(rms) : 3.75kV) (*) Up to Date code "P9" (September 2002) VCEO : 35V. From the production Date code "J5" (May 1997) to "P9" (September 2002), however the products were screened by BVCEO≥70V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00601EN Date Sep. 30. 2003 © SHARP Corporation PC354N Series ■ Internal Connection Diagram 1 4 1 2 3 3 2 4 Anode Anode/Cathode Cathode/Anode Emitter Collector ■ Outline Dimensions (Unit : mm) 3.6±0.3 2.54±0.25 4 3 Date code Primary side mark 354 4.4±0.2 SHARP mark "S" Rank mark Factory identification mark 1 2 ±0.1 0.4 5.3±0.3 Epoxy resin 0.1±0.1 2.6±0.2 0.2±0.05 45˚ 0.5+0.4 −0.2 6˚ 7.0+0.2 −0.7 Product mass : approx. 0.1g Sheet No.: D2-A00601EN 2 PC354N Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. Rank mark Refer to the Model Line-up table Sheet No.: D2-A00601EN 3 PC354N Series ■ Absolute Maximum Ratings Output Input Parameter Symbol IF Forward current *1 Peak forward current IFM P Power dissipation Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Operating temperature Topr Storage temperature Tstg *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating ±50 ±1 70 *4 80 6 50 150 170 −30 to +100 −40 to +125 3.75 260 (Ta=25˚C) Unit mA A mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s *4 Up to Date code "P9" (September 2002) VCEO : 35V. ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF Ct Terminal capacitance Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Conditions IF=±20mA V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=±1mA, VCE=5V IF=±20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω MIN. − − − *5 80 6 0.2 − 5×1010 − − − TYP. 1.2 30 − − − − 0.1 1×1011 0.6 4 3 MAX. 1.4 250 100 − − 4.0 0.2 − 1.0 18 18 (Ta=25˚C) Unit V pF nA V V mA V Ω pF µs µs *5 From the production Date code "J5" (May 1997) to "P9" (September 2002), however the products were screened by BVCEO≥70V. Sheet No.: D2-A00601EN 4 PC354N Series ■ Model Line-up Package Model No. Taping 3 000 pcs/reel 750 pcs/reel PC354N PC354N1 PC354NT PC354N1T Rank mark IC [mA] (IF=±1mA, VCE=5V, Ta=25˚C) A or no mark A 0.2 to 4.0 0.5 to 1.5 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A00601EN 5 PC354N Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 70 Diode power dissipation P (mW) Forward current IF (mA) 60 50 40 30 20 10 0 −30 0 25 50 75 100 Ambient temperature Ta(˚C) 70 60 40 20 100 300 Total power dissipation Ptot (mW) 150 100 50 0 −30 0 25 50 75 100 Ambient temperature Ta (˚C) 200 170 150 100 50 500 Pulse width≤100µs Ta=25˚C Forward current IF (mA) 1 000 500 200 100 50 25˚C 0˚C 50 −25˚C 20 10 5 2 10 1 5 10− 2 2 Duty ratio 10− 1 2 5 1 50˚C 100 20 5 100 Ta=75˚C 200 2 000 5 10− 3 2 0 25 50 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage 10 000 5 000 250 0 −30 125 Fig.5 Peak Forward Current vs. Duty Ratio 5 0 50 55 Ambient temperature Ta (˚C) Fig.4 Total Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) 80 0 −30 125 Fig.3 Collector Power Dissipation vs. Ambient Temperature Peak forward current IFM (mA) 100 0 0.5 1.0 1.5 2.0 2.5 Forward voltage VF (V) 3.0 3.5 Sheet No.: D2-A00601EN 6 PC354N Series Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 50 500 Ta=25˚C 40 400 Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25˚C 300 200 IF=30mA 20mA 30 PC (MAX.) 10mA 20 5mA 10 100 1mA 0 0.1 1 10 Forward current IF (mA) 0 100 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 1 2 3 4 5 6 7 8 Collector-emitter voltage VCE (V) 9 10 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.16 IF=5mA VCE=5V Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 150 0 100 50 IF=20mA IC=1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 −30 0 20 40 60 80 Ambient temperature Ta (˚C) 0 −30 100 Fig.11 Collector Dark Current vs. Ambient Temperature 500 VCE=2V 200 IC=2mA Ta=25˚C 100 VCE=50V 10−6 5 −7 10 5 10−8 5 10−9 5 50 tr 20 tf 10 5 2 1 td ts 0.5 10−10 5 10−11 −30 100 Fig.12 Response Time vs. Load Resistance Response time (µs) Collector dark current ICEO (A) 10−5 5 0 20 40 60 80 Ambient temperature Ta (˚C) 0 20 40 60 80 Ambient temperature Ta (˚C) 0.2 0.1 0.01 100 0.1 1 10 Load resistance RL (kΩ) 50 Sheet No.: D2-A00601EN 7 PC354N Series Fig.13 Test Circuit for Response Time Fig.14 Collector-emitter Saturation Voltage vs. Forward Current 5.6 VCC Ta=25˚C Input RD RL Collector-emitter saturation voltage VCE (sat) (V) Input Output Output 10% 90% VCE td ts tr tf Please refer to the conditions in Fig.12 IC=0.5mA 4.2 1mA 3mA 5mA 7mA 2.8 1.4 0 0 1 2 3 4 5 6 7 8 Forward current IF (mA) 9 10 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A00601EN 8 PC354N Series ■ Design Considerations ● Design guide While operating at IF