PC367N

PC367N Series PC367N Series Mini-flat Package High CMR, Low Input Current Type Photocoupler ■ Description ■ Agency approvals/Compliance PC367N contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin mini-flat. Low input current type. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V (*) and CTR is 100% to 500% at input current of 0.5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC367) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers 2. Facsimiles 3. Telephones ■ Features 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. Low input current type (IF=0.5mA) 4. High collector-emitter voltage (VCEO : 80V(∗)) 5. High noise immunity due to high common mode rejection voltage (CMR : MIN. 10kV/µs) 6. High isolation voltage between input and output (Viso(rms) : 3.75kV) (*) Up to Date code "P9" (September 2002) VCEO : 70V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00501EN Date Sep. 30. 2003 © SHARP Corporation PC367N Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) 3.6±0.3 2.54±0.25 4 3 Anode mark 367 4.4±0.2 Date code SHARP mark "s" Rank mark 1 2 0.4±0.1 Factory identification mark 5.3±0.3 Epoxy resin 0.1±0.1 2.6±0.2 0.2±0.05 45˚ 0.5+0.4 −0.2 6˚ 7.0+0.2 −0.7 Product mass : approx. 0.1g Sheet No.: D2-A00501EN 2 PC367N Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please Contact the local SHARP sales reprsentative to see the actual status of the production. Rank mark Refer to the Model Line-up table Sheet No.: D2-A00501EN 3 PC367N Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol (Ta=25˚C) Rating Unit 10 mA 200 mA V 6 15 mW *4 80 V 6 V 50 mA 150 mW 170 mW −30 to +100 ˚C −40 to +125 ˚C 3.75 kV 260 ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s *4 Up to Date code "P9" (September 2002) VCEO : 70V ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf tr Rise time Response time tf Fall time Common mode rejection voltage CMR Conditions IF=10mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω Ta=25˚C, RL=470Ω, VCM=1.5kV(peak) IF=0mA, VCC=9V, Vnp=100mV MIN. − − − − *5 80 6 0.5 − 5×1010 − − − TYP. 1.2 − 30 − − − − − 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − 2.5 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs 10 − − kV/µs *5 Up to Date code "P9" (September 2002) BVCEO≥70V. Sheet No.: D2-A00501EN 4 PC367N Series ■ Model Line-up Package Model No. Taping 3 000pcs/reel 750pcs/reel PC367N PC367NT PC367N1 PC367N1T PC367N2 PC367N2T Rank mark IC [mA] (IF=0.5mA, VCE=5V, Ta=25˚C) with or without A B 0.5 to 2.5 0.75 to 1.5 1.0 to 2.0 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A00501EN 5 PC367N Series Fig.1 Test Circuit for Common Mode Rejection Voltae (dV/dt) VCC RL VCM VO 1) Vnp Vcp  VCM : High wave  pulse   RL=470Ω  VCC=9V VCM VO Fig.3 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P (mW) Forward current IF (mA) Fig.2 Forward Current vs. Ambient Temperature 10 5 0 −30 (Vcp Nearly = dV/dt×Cf×RL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. 0 25 50 75 100 15 10 5 0 −30 125 0 200 150 100 50 0 25 50 75 50 75 100 125 Fig.5 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.4 Collector Power Dissipation vs. Ambient Temperature 0 −30 25 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) 0 25 50 75 100 125 Ambient temperature Ta (˚C) Sheet No.: D2-A00501EN 6 PC367N Series Fig.7 Forward Current vs. Forward Voltage Fig.6 Peak Forward Current vs. Duty Ratio 100 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 2 000 500 200 100 50 10 Ta=25˚C Ta=100˚C Ta=0˚C Ta=75˚C 1 Ta=−25˚C Ta=50˚C 20 10 −3 5 10 2 −2 5 10 2 0.1 −1 5 10 2 5 1 0 0.5 Duty ratio Fig.8 Current Transfer Ratio vs. Forward Current 700 Collector current IC (mA) Current transfer ratio CTR (%) 25 300 200 PC (MAX.) IF=5mA 20 IF=3mA 15 IF=2mA 10 IF=1mA 5 100 IF=0.5mA 0 1 0 10 2 4 6 8 10 Collector-emitter voltage VCE (V) Forward current IF (mA) Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature VCE=5V IF=0.5mA Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) Ta=25˚C IF=7mA 400 140 2.0 30 500 160 1.5 Fig.9 Collector Current vs. Collector-emitter Voltage VCE=5V Ta=25˚C 600 0 0.1 1.0 Forward voltage VF (V) 120 100 80 60 40 20 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) 0.16 IF=10mA IC=1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Sheet No.: D2-A00501EN 7 PC367N Series Fig.12 Collector Dark Current vs. Ambient Temperature 100 VCE=50V VCE=2V, IC=2mA 10−6 10−7 Responce time (µs) Collector dark current ICEO (A) 10−5 Fig.13 Response Time vs. Load Resistance (Active region) 10−8 10−9 tr tf 10 td ts 10−10 10−11 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 1 0.1 1 Ambient temperature Ta (˚C) Load resistance RL (kΩ) Fig.15 Test Circuit for Response Time Fig.14 Response Time vs. Load Resistance (Saturation region) 1 000 Vcc=5V, IF=1mA, Ta=25˚C VCC RL RD tf Responce time (µs) 10 Output Input Output Input ts 10% 100 VCE ts tf td tr 10 tr Please refer to the conditions in Fig.13 and Fig.14 td 1 90% 100 10 1 Load resistance RL (kΩ) Fig.16 Frequency Response Fig.17 Collector-emitter Saturation Voltage vs. Forward Current VCE=2V IC=2mA Ta=25˚C Voltage gain AV (dB) 0 −5 Collector-emitter saturation voltage VCE (sat) (V) 5 RL=10kΩ 1kΩ −10 100Ω −15 −20 −25 0.1 1 10 100 1 000 5 IC=7mA 4 IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 1 0 0 Frequency f (kHz) Ta=25˚C IC=5mA 2 4 6 8 10 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A00501EN 8 PC367N Series ■ Design Considerations ● Design guide While operating at IF