PC8171xNSZ Series
PC8171xNSZ
Series
DIP 4pin High CMR,
Low Input Current
Photocoupler
■ Description
■ Agency approvals/Compliance
PC8171xNSZ Series contains an IRED optically
coupled to a phototransistor.
It is packaged in a 4pin DIP, available in SMT gullwing lead-form option.
Input-output isolation voltage(rms) is 5.0kV.
Collector-emitter voltage is 80V(*), CTR is 100% to
600% at input current of 0.5mA and CMR is MIN.
10kV/µs.
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No. PC8171)
2. Package resin : UL flammability grade (94V-0)
■ Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
■ Features
1. 4pin DIP package
2. Double transfer mold package (Ideal for Flow Soldering)
3. Low input current type (IF=0.5mA)
4. High collector-emitter voltage(VCEO : 80V(*))
5. High noise immunity due to high common rejection
voltage (CMR : MIN. 10kV/µs)
6. High isolation voltage between input and output
(Viso(rms) : 5.0 kV)
(*)Up to Date code"P7"(July 2002)VCEO : 70V.
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A03301EN
Date Sep. 30. 2003
© SHARP Corporation
PC8171xNSZ Series
■ Internal Connection Diagram
1
1
4
2
3
2
3
4
Anode
Cathode
Emitter
Collector
■ Outline Dimensions
(Unit : mm)
8 1 7 1
1.2±0.3
7.62±0.3
0.26
3.5±0.5
3.0±0.5
2.7±0.5
±0.1
4.58±0.5
7.62±0.3
Epoxy resin
4
6.5±0.5
0.5TYP.
6.5±0.5
Date code
1
2
2.54±0.25
3
Factory identification mark
1.0+0.4
−0
3
4.58±0.5
Epoxy resin
1.0+0.4
−0
3.5±0.5
8 1 7 1
2
Rank mark
0.35±0.25
4
1
4.58±0.5
Date code
0.6±0.2
Anode mark
Factory identification mark
4.58±0.5
Rank mark
0.6±0.2
1.2±0.3
Anode mark
2. SMT Gullwing Lead-Form [ex. PC8171xNIP]
2.54±0.25
1. Through-Hole [ex. PC8171xNSZ]
2.54±0.25
10.0+0
−0.5
±0.1
0.5
θ
θ : 0 to 13˚
θ
Product mass : approx. 0.21g
Sheet No.: D2-A03301EN
2
PC8171xNSZ Series
Date code (2 digit)
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
··
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
Mark
P
R
S
T
U
V
W
X
A
B
C
··
·
repeats in a 20 year cycle
Factory identification mark
Factory identification Mark
Country of origin
no mark
Japan
Indonesia
Philippines
China
* This factory making is for identification purpose only.
Please contact the local SHARP sales representative to see
the actual status of the production.
Rank mark
Refer to the Model Line-up table
Sheet No.: D2-A03301EN
3
PC8171xNSZ Series
■ Absolute Maximum Ratings
Output
Input
Parameter
Symbol
Forward current
IF
*1
Peak forward current
IFM
Reverse voltage
VR
Power dissipation
P
Collector-emitter voltage VCEO
Emitter-collector voltage VECO
IC
Collector current
Collector power dissipation
PC
Ptot
Total power dissipation
*2
Isolation voltage
Viso (rms)
Topr
Operating temperature
Tstg
Storage temperature
*3
Soldering temperature
Tsol
Rating
10
200
6
15
*4
80
6
50
150
170
5.0
−30 to +100
−55 to +125
260
(Ta=25˚C)
Unit
mA
mA
V
mW
V
V
mA
mW
mW
kV
˚C
˚C
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
*4 Up to Data code"P7"(July 2002)VCEO : 70V.
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Parameter
Symbol
Forward voltage
VF
IR
Reverse Current
Terminal capacitance
Ct
Collector dark current
ICEO
Collector-emitter breakdown voltage BVCEO
Emitter-collector breakdown voltage BVECO
Collector current
IC
Collector-emitter saturation voltage VCE (sat)
Isolation resistance
RISO
Floating capacitance
Cf
Rise time
tr
Response time
Fall time
tf
Common mode rejection voltage
CMR
Conditions
IF=10mA
VR=4V
V=0, f=1kHz
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IF=0.5mA, VCE=5V
IF=10mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=2mA, RL=100Ω
Ta=25˚C, RL=470Ω, VCM=1.5kV(peak)
IF=0, VCC=9V, Vnp=100mV
MIN.
−
−
−
−
*5
80
6
0.5
−
5×1010
−
−
−
10
TYP.
1.2
−
30
−
−
−
−
−
1×1011
0.6
4
3
MAX.
1.4
10
250
100
−
−
3.0
0.2
−
1.0
18
18
(Ta=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
−
−
kV/µs
*5 Up to Data code"P7"(July 2002)BVCEO ≥ 70V.
Sheet No.: D2-A03301EN
4
PC8171xNSZ Series
■ Model Line-up
Lead Form Through-Hole SMT Gullwing
Sleeve
Taping
Package
100pcs/sleeve 2000pcs/reel
PC81710NSZ
PC81711NSZ
PC81712NSZ
Model No. PC81713NSZ
PC81715NSZ
PC81716NSZ
PC81718NSZ
PC81710NIP
PC81711NIP
PC81712NIP
PC81713NIP
PC81715NIP
PC81716NIP
PC81718NIP
Rank mark
IC [mA]
(IF=0.5mA, VCE=5V, Ta=25˚C)
with or without
A
B
C
A or B
B or C
A, B or C
0.5 to 3.0
0.6 to 1.5
0.8 to 2.0
1.0 to 2.5
0.6 to 2.0
0.8 to 2.5
0.6 to 2.5
Please contact a local SHARP sales representative to inquire about production status and Lead-Free options.
Sheet No.: D2-A03301EN
5
PC8171xNSZ Series
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/dt)
VCM
RL
1)
VCC
Vnp
VCM : High wave
VO
pulse
(Vcp Nearly = dV/dt×Cf×RL)
RL=470Ω
1) Vcp : Voltage which is generated by displacement current in floating
VCC=9V
capacitance between primary and secondary side.
VCM
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
Diode power dissipation P (mW)
Forward current IF (mA)
Fig.2 Forward Current vs. Ambient
Temperature
10
5
0
−30
0
Vnp
Vcp
25
50
75
100
15
10
5
0
−30
125
0
200
150
100
50
0
25
50
75
50
75
100
125
Fig.5 Total Power Dissipation vs. Ambient
Temperature
Total power dissipation Ptot (mW)
Collector power dissipation PC (mW)
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
0
−30
25
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
100
200
170
150
100
50
0
−30
125
Ambient temperature Ta (˚C)
0
25
50
75
100
125
Ambient temperature Ta (˚C)
Sheet No.: D2-A03301EN
6
PC8171xNSZ Series
Fig.7 Forward Current vs. Forward Voltage
Fig.6 Peak Forward Current vs. Duty Ratio
100
Pulse width≤100µs
Ta=25˚C
1 000
Forward current IF (mA)
Peak forward current IFM (mA)
2 000
500
200
100
50
10
Ta=25˚C
Ta=100˚C
Ta=0˚C
Ta=75˚C
1
Ta=−25˚C
Ta=50˚C
20
10
−3
5 10
2
−2
5 10
2
0.1
−1
5 10
2
1
5
0
0.5
Duty ratio
Fig.8 Current Transfer Ratio vs. Forward
Current
800
Ta=25˚C
PC (MAX.)
600
500
400
300
200
30
IF=7mA
IF=5mA
20
IF=3mA
IF=2mA
10
IF=1mA
100
0
0.1
IF=0.5mA
0
1
0
10
2
4
6
8
10
Collector-emitter voltage VCE (V)
Forward current IF (mA)
Fig.10 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.11 Collector - emitter Saturation Voltage
vs. Ambient Temperature
Collector-emitter saturation voltage VCE (sat) (V)
150
Relative current transfer ratio (%)
2.0
40
Collector current IC (mA)
Current transfer ratio CTR (%)
1.5
Fig.9 Collector Current vs. Collector-emitter
Voltage
VCE=5V
Ta=25˚C
700
1.0
Forward voltage VF (V)
VCE=5V
IF=0.5mA
100
50
0
−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (˚C)
0.16
IF=10mA
IC=1mA
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (˚C)
Sheet No.: D2-A03301EN
7
PC8171xNSZ Series
Fig.12 Collector Dark Current vs. Ambient
Temperature
100
VCE=50V
VCE=2V, IC=2mA
10−6
10−7
Responce time (µs)
Collector dark current ICEO (A)
10−5
Fig.13 Response Time vs. Load Resistance
(active region)
10−8
10−9
tr
tf
10
td
ts
10−10
10−11
−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100
1
0.1
1
Ambient temperature Ta (˚C)
Load resistance RL (kΩ)
Fig.14 Response Time vs. Load Resistance
(saturation region)
1 000
Fig.15 Test Circuit for Response Time
Vcc=5V, IF=1mA, Ta=25˚C
VCC
RL
RD
tf
Responce time (µs)
10
Output Input
Output
Input
ts
100
10%
VCE
ts
tf
td
tr
10
90%
Please refer to the conditions in Fig.13 and Fig.14.
tr
td
1
100
10
1
Load resistance RL (kΩ)
Fig.16 Frequency Response
Fig.17 Collector-emitter Saturation Voltage
vs. Forward Current
VCE=2V
IC=2mA
Ta=25˚C
Voltage gain AV (dB)
0
−5
Collector-emitter saturation voltage VCE (sat) (V)
5
RL=10kΩ
1kΩ
−10
100Ω
−15
−20
−25
0.1
1
10
100
1 000
5
IC=7mA
4
IC=3mA
IC=2mA
3
IC=1mA
IC=0.5mA
2
1
0
0
Frequency f (kHz)
Ta=25˚C
IC=5mA
2
4
6
8
10
Forward current IF (mA)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A03301EN
8
PC8171xNSZ Series
■ Design Considerations
● Design guide
While operating at IF
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