PC851XI

PC851X Series PC851X Series DIP 4pin High Collector-emitter Voltage Photocoupler ■ Description ■ Agency approvals/Compliance PC851X Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin DIP, available in SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. Collector-emitter voltage is 350V. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC851) 2. Package resin : UL flammability grade (94V-0) ■ Applications ■ Features 1. Telephone line interface/isolation 2. Interface to power supply circuit 3. Controller for SSRs, DC moters 1. 4pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 350V) 4. High isolation voltage between input and output (Viso(rms) : 5.0 kV) Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A03401EN Date Sep. 30. 2003 © SHARP Corporation PC851X Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) 0.26 2.7±0.5 3.0±0.5 3.5±0.5 7.62±0.3 1.0+0.4 −0 3 Epoxy resin 4.58±0.5 3.5±0.5 4.58 ±0.1 1.0+0.4 −0 2.54±0.25 10.0+0 −0.5 0.5 θ PC851 6.5±0.5 7.62 Epoxy resin 4 ±0.5 ±0.1 ±0.3 0.5TYP. 6.5±0.5 Date code 1 2 2.54±0.25 3 Factory identification mark 0.35±0.25 PC851 2 1.2±0.3 4 4.58±0.5 1 0.6±0.2 Anode mark Date code 4.58±0.3 Factory identification mark 0.6±0.2 1.2±0.3 Anode mark 2. SMT Gullwing Lead-Form [ex. PC851XI] 2.54±0.25 1. Through-Hole [ex. PC851X] θ θ : 0 to 13˚ Product mass : approx. 0.21g Sheet No.: D2-A03401EN 2 PC851X Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory making is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. Sheet No.: D2-A03401EN 3 PC851X Series ■ Model Line-up Lead Form Package Model No. Through Hole SMT Gullwing Taping Sleeve 100pcs/sleeve 2 000pcs/reel PC851X PC851XP PC851XI Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A03401EN 4 PC851X Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation *2 Isolation voltage Viso (rms) Topr Operating temperature Tstg Storage temperature *3 Soldering temperature Tsol Rating 50 1 6 70 350 6 50 150 200 5.0 −25 to +100 −55 to +125 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW kV ˚C ˚C ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse Current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf fC Cut-off frequency Rise time tr Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=200V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω, −3dB VCE=2V, IC=2mA, RL=100Ω MIN. − − − − 350 6 2.0 − 5×1010 − − − − TYP. 1.2 − 30 − − − 4.0 0.1 1×1011 0.6 50 4 5 MAX. 1.4 10 250 1 − − − 0.3 − 1.0 − 10 12 (Ta=25˚C) Unit V µA pF µA V V mA V Ω pF kHz µs µs Sheet No.: D2-A03401EN 5 PC851X Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −25 0 25 50 55 75 100 80 70 60 40 20 0 −25 125 0 25 50 55 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.3 Collector Power Dissipation vs. Ambient Temperature Fig.4 Total Power Dissipation vs. Ambient Temperature 250 Total Power dissipation Ptot (mW) Diode power dissipation P (mW) 100 80 70 60 40 20 0 −25 0 25 50 55 75 100 200 150 100 50 0 −25 125 0 Ambient temperature Ta (˚C) Fig.5 Peak Forward Current vs. Duty Ratio 75 100 125 Ta=75˚C 200 Forward current IF (mA) Peak forward current IFM (mA) 500 Pulse width≤100µs Ta=25˚C 2 000 1 000 500 200 100 50 20 50˚C 25˚C 0˚C −25˚C 100 50 20 10 5 2 10 5 50 Fig.6 Forward Current vs. Forward Voltage 10 000 5 000 25 Ambient temperature Ta (˚C) 1 5 10−3 2 5 10−2 2 5 10−1 2 5 1 0 Duty ratio 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF (V) Sheet No.: D2-A03401EN 6 PC851X Series Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 200 A 25m 100 20m 15mA 10 10mA 5mA 0 1 10 0 100 5 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 150 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.16 Collector-emitter saturation voltage VCE (sat) (V) IF=5mA VCE=5V 100 50 0 −25 0 25 50 75 IF=20mA IC=1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 −25 100 0 Ambient temperature Ta (˚C) 25 50 75 100 Ambient temperature Ta (˚C) Fig.11 Collector Dark Current vs. Ambient Temperature Fig.12 Collector-emitter Saturation Voltage vs. Forward Current 10−5 6 Collector-emitter saturation voltage VCE (sat) (V) VCE=200V 10−6 10−7 10−8 10−9 10−10 10−11 −25 10 Collector-emitter voltage VCE (V) Forward current IF (mA) Relative current transfer ratio (%) PC (MAX.) A 0 0.1 Collector dark current ICEO (A) Ta=25˚C IF=30mA 20 Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25˚C Ta=25˚C 5 7mA 4 5mA 3mA 3 1mA 2 IC=0.5mA 1 0 0 25 50 75 0 100 2 4 6 8 10 12 14 16 18 20 Forward current IF (mA) Ambient temperature Ta (˚C) Sheet No.: D2-A03401EN 7 PC851X Series Fig.13 Response Time vs. Load Resistance 500 200 100 Fig.14 Test Circuit for Response Time VCE=2V IC=2mA Ta=25˚C Output 50 Response time (µs) Input VCC Input tr 20 10 tf 2 1 RL Output VCE td 5 RD ts 10% 90% td ts tr tf Please refer to the conditions in Fig.13. 0.5 0.2 0.1 0.01 0.1 1 10 50 Load resistance RL (kΩ) Fig.15 Frequency Response VCC VCE=5V IC=2mA Ta=25˚C 0 Voltage gain Av (dB) Fig.16 Test Circuit for Frequency Response RD RL 100Ω RL=10kΩ −10 Output VCE 1kΩ Please refer to the conditions in Fig.15. −20 0.5 1 2 5 10 20 50 100 200 500 Frequency f (kHz) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A03401EN 8 PC851X Series ■ Design Considerations ● Design guide While operating at IF