2SK2192

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2192 (F12W50VX2) 500V 12A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: MTO-3P Case E-pack (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. APPLICATION ●Switching power supply of AC 100V input ●High voltage power supply ●Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage Gate-Source Voltage VGSS ID Continuous Drain Current（DC） IDP Continuous Drain Current（Peak) IS Continuous Source Current（DC） Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25℃ ＴＯＲ （ Recommended torque : 0.5N･m ） Mounting Torque Ratings -55～150 150 500 ±30 12 36 12 80 12 0.8 Unit ℃ V A W A N・ m Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage θjc Theｒmal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2192 ( F12W50VX2 ) Min. 500 Typ. Max. 250 ±0.1 3.0 2.5 7.6 0.55 3.0 Unit V μA ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V ID = 6A, VDS = 10V ID = 6A, VGS = 10V ID = 1mA, VDS = 10V IS = 6A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 12A VDS = 10V, VGS = 0V, f = 1MHZ ID = 6A, VGS = 10V, RL = 25Ω 42 1200 90 270 90 190 S 0.7 Ω 3.5 V 1.5 1.56 ℃/Ｗ nC pF 130 280 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2192 25 Tc = − 55 °C Transfer Characteristics 25 °C 20 Drain Current ID [A] 100 °C 15 150 °C 10 5 VDS = 25V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2192 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 1 ID = 6A 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [°C] 2SK2192 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [°C] 2SK2192 100 Safe Operating Area 10 100 µs R DS(ON) limit 1 1ms 200 µs Drain Current ID [A] 10ms DC 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2192 Transient Thermal Impedance 100 10 1 Transient Thermal Impedance θjc(t) [°C/W] 0.1 0.01 10-5 10-3 10-4 10-2 10-1 100 101 102 Time t [s] 2SK2192 Capacitance Ciss 1000 Capacitance Ciss Coss Crss [pF] Coss 100 Crss Tc=25 °C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2192 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [°C] 2SK2192 500 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 400V 200V 300 100V 10 VDS 200 VGS 5 100 ID = 12A 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400