S10VT80

SHINDENGEN 3 Phase Bridge Diode Diode Module S10VT80 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate OUTLINE DIMENSIONS Case : 2F SVT Case : (Unit : mm) (VTA type) APPLICATION ●Big Power Supply ●Air conditioner ●Factory Automation, Inverter RATINGS ●　Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load, With heatsink, Tc=137℃ IO Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque Ratings -40～150 150 800 10 150 80 2 0.8 Unit ℃ ℃ V A A A2s kV N･m IFSM 2 50Hz sine wave, Non-repetitive 1cycle peak value, Rating of per diode, Tj=25℃ I t 1ms≦t＜10ms　Ｔc=25℃ Vdis Terminals to case, AC 1 minute TOR （Recommended torque : 0.6N･m） ●　Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions Forward Voltage VF IF=3.5A, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance Ratings Max.1.05 Max.10 Unit V μA IR θjc VR=VRM, Pulse measurement, Rating of per diode junction to case 　 Max.0.65 ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S10VTx Forward Voltage 10 Forward Current IF [A] Tc=150 °C [TYP] Tc=25 °C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage VF [V] S10VTx 40 35 Forward Power Dissipation SIN Forward Power Dissipation PF [W] 30 25 20 15 10 5 0 0 5 10 15 20 Average Rectified Forward Current IO [A] Tj = 150 °C Sine wave S10VTx 25 Derating Curve + - Average Rectified Forward Current IO [A] 20 Heatsink Tc SIN 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = VRM Sine wave R-load with heatsink S10VTx 300 Peak Surge Forward Capability IFSM 10ms 10ms 250 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25 °C before surge current is applied, per diode 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles]