SHINDENGEN
Bridge Diode
Square In-line Package
S4VB20
200V 4A
OUTLINE DIMENSIONS
Case : S4VB Unit : mm
RATINGS
● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature Maximum Reverse Voltage VRM IO 50Hz sine wave, R-load, Ta=40℃ With heatsink θfa=10℃/W Average Rectified Forward Current
50Hz sine wave, R-load, Ta=40℃ Peak Surge Forward Current Current Squared Time Mounting Torque Without heatsink
IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ I2t 1ms≦t<10ms Tc=25℃ TOR (Recommended torque : 0.5N・m)
Ratings Unit -40~150 ℃ 150 ℃ 200 V 4 A 2.6 80 A 32 A2s 0.8 N・m Ratings Unit Max.1.05 V Max.10 μA Max.4.5 ℃/W
● Electrical Characteristics (Tl=25℃) Item Symbol Conditions VF IF=2A, Forward Voltage Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance θjl junction to lead
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
S4VBx
Forward Voltage
10
Forward Current IF [A]
Tl=150°C [TYP] Tl=25 °C [TYP]
1
Pulse measurement per diode
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage VF [V]
S4VBx
12
Forward Power Dissipation
Forward Power Dissipation PF [W]
10
SIN
8
6
4
2
0
0
1
2
3
4
5
6
Average Rectified Forward Current IO [A]
Tj = 150 °C Sine wave
S4VBx
5
Derating Curve
Average Rectified Forward Current IO [A]
* θ fa = 10°C/W 4
l
3
l=25mm l=15mm
2 without heatsink
l= 5mm
1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
Sine wave R-load Free in air * with thermal compound, TOR=3kg-cm
S4VBx
100
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
80
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25 °C before surge current is applied
60
40
20
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
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