US6KB80R

CAT.No.TJ 536 SILICON BRIDGE DIODES USKB SERIES UL File No. E142422 Summary Bridge diodes are being required to take up less space accompanying the reduced size of electronic equipment. In order to respond to these needs, Shindengen has developed a new package in offering a complete lineup of bridge diodes that can be used in a wide range of power supply environments. Features Rectified forward current : 4A US4KB80R） 6A US6KB80R） 8A US8KB80R） （ ,（ ,（ , （with heat sink） 10A US10KB80R） 15A US15KB80R） 30A US30KB80R） （ , （ , （ ● L arge current capacity of 30A with compact package ● H igh I FSM a nd High Voltage ● U L approved Bridge Rectifier Diodes, registered in file number E142422 ● High-density mounting for improved space efficiency through the use of SIP Single In-Line Package） （ ● Application TV, Monitor, Switching power supply, PC, Audio, Printer CAT.No.TJ 536 RATINGS ● Absolute Maximum Ratings（Tc=25℃／Unless otherwise specified） I tem Symbol Conditions US4KB80R US6KB80R US8KB80R −55∼150 150 800 Unit Storage Temperature Operation Junction Temperature Maximun Reverse Voltage Average Rectified Forward Current Tstg Tj VRM With heatsink ℃ ℃ V 8 （Tc=108℃） 4 （Tc=125℃） 6 （Tc=116℃） Io 60Hz sine wave, Resistance load Without heatsink 2.1 （Ta=30℃） 2.1 （Ta=30℃） 2.2 （Ta=26℃） A IFSM Peak Surge Forward Current IFSM1 60Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ Non−repetitive, Tj=25℃ Tj=25℃, Per diode Terminals to cace, AC 1 minute 150 245 （tp=3ms） 175 470 （tp=1ms） 200 575 （tp=1ms） A Current Squared Time Dielectric Strength Mounting Torque ● I2t Vdis 93 112 2.0 0.8 166 （3ms≦t＜8.3ms） （1ms≦t＜8.3ms） （1ms≦t＜8.3ms） A2 s kV Nm ・ ： ・ TOR （Recommended torque 0.5N m） Electrical Characteristics（Tc=25℃／Unless otherwise specified） VF IR θ jc Pulse measurement, Per diode VR=800V, Pulse measurement, Per diode Junction to case, With heatsink Junction to lead, Without heatsink Junction to ambient, Without heatsink Forward Voltage Reverse Current MAX. 1.00 （IF=2A） MAX. 1.00 （IF=3A） MAX. 1.00 （IF=4A） V μA MAX. 10 MAX. 3.5 MAX. 3.0 MAX. 5 MAX. 2.8 Thermal Resistance θ jl θ ja ℃/W MAX. 35 US4K80R US6K80R US8K80R Type No. ● Absolute Maximum Ratings（Tc=25℃／Unless otherwise specified） Item Symbol Conditions US10KB80R US15KB80R US30KB80R −55∼150 150 800 Unit Storage Temperature Operation Junction Temperature Maximun Reverse Voltage Average Rectified Forward Current Tstg Tj VRM With heatsink ℃ ℃ V 30 （Tc=97℃） 10 （Tc=100℃） 15 （Tc=101℃） Io 60Hz sine wave, Resistance load Without heatsink 2 （Ta=28℃） 2 （Ta=30℃） 2.1 （Ta=27℃） A IFSM Peak Surge Forward Current IFSM1 60Hz sine wave, Non−repetitive 1cycle peak value, Tj=25℃ Non-repetitive, Tj=25℃ Tj=25℃, Per diode Terminals to cace, AC 1 minute 150 245 （tp=3ms） 200 330 （tp=3ms） 350 1000 （tp=1ms） A A2s kV Nm ・ Current Squared Time Dielectric Strength Mounting Torque ● I2 t Vdis 93 166 2.0 0.8 510 （3ms≦t＜8.3ms） （3ms≦t＜8.3ms） （1ms≦t＜8.3ms） ： ・ TOR （Recommended torque 0.5N m） Electrical Characteristics（Tc=25℃／Unless otherwise specified） VF IR θ jc Pulse measurement, Per diode VR=800V, Pulse measurement, Per diode Junction to case, With heatsink Junction to lead, Without heatsink Junction to ambient, Without heatsink Forward Voltage Reverse Current MAX. 1.10 （IF=5A） MAX. 1.10 （IF=7.5A） MAX. 1.10 （IF=15A） V μA MAX. 10 MAX. 2.5 MAX. 1.5 MAX. 5 MAX. 0.8 Thermal Resistance θ jl θ ja ℃/W MAX. 35 U10K80R U15K80R U30K80R Type No. CAT.No.TJ 536 US4KB80R 30 20 10 CHARACTERISTIC DIAGRAMS Forward Voltage 10 Pulse measurement per diode Forward Power Dissipation 200 Peak Surge Forward Current Capability  Forward Power Dissipation PF［W］ tp Forward Current IF［A］ 8 T D=tp/T ［ Peak Surge Forward Current I FSM A］ Io IFSM 8.3ms Tc=150℃ ［TYP］ 5 Tc= 25℃ ［TYP］ Tj=150℃ SIN 150 8.3ms 1cycle non−repetitive sine wave Tj=25℃ 6 2 1 0.5 100 4 50 2 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0 1 2 3 4 5 0 1 2 5 10 20 50 100 Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles  ［cycle］ Derating Curve Ta-Io Average Rectified Forward Current Io［A］ Sine wave R-load Free in air on glass−epoxy substrate Derating Curve Tc-Io Average Rectified Forward Current Io［A］ 7 6 5 4 3 2 1 0 0 Sine wave R-load With heatsink Tc heatsink Tc−sensing point Peak Surge Forward Current Capability 500 3 Peak Surge Forward Current I FSM1［A］ 400 300 Tj=25℃ 200 Tj=150℃ 2.5 P.C.B SIN 2 soldering land 3mm φ I （tp） FSM tp non−repetitive sine wave SIN 1.5 1 0.5 100 90 80 70 60 50 3 4 5 6 7 8.3 0 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］ US6KB80R Forward Voltage 30 20 10 Pulse measurement per diode Forward Power Dissipation 14 12 10 8 6 4 2 0 0 250 Peak Surge Forward Current Capability tp T D=tp/T ［ Peak Surge Forward Current I FSM A］  Forward Power Dissipation PF［W］ Io Forward Current IF［A］ Tc=150℃ ［TYP］ SIN 200 IFSM 8.3ms 8.3ms 1cycle non−repetitive sine wave Tj=25℃ 5 Tc= 25℃ ［TYP］ Tj=150℃ 150 2 1 0.5 100 50 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 2 3 4 5 6 7 8 0 1 2 5 10 20 50 100 Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles  ［cycle］ Derating Curve Ta-Io 3 Derating Curve Tc-Io Average Rectified Forward Current Io［A］ 10 Sine wave R-load With heatsink Tc heatsink Tc−sensing point Peak Surge Forward Current Capability 1000 Average Rectified Forward Current Io［A］ 2.5 P.C.B 8 Peak Surge Forward Current I FSM1［A］ SIN 2 soldering land 3mm φ 500 Tj=25℃ I （tp） FSM tp non−repetitive sine wave Sine wave R-load Free in air on glass−epoxy substrate 6 SIN 1.5 200 4 Tj=150℃ 1 0.5 2 100 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 50 1 2 3 4 5 6 7 8.3 Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］ CAT.No.TJ 536 US8KB80R 50 20 CHARACTERISTIC DIAGRAMS Forward Voltage 20 Pulse measurement per diode Forward Power Dissipation 300 Peak Surge Forward Current Capability  Forward Power Dissipation PF［W］ ［ Peak Surge Forward Current I FSM A］ Io tp T D=tp/T 250 8.3ms 8.3ms 1cycle non−repetitive sine wave Tj=25℃ Forward Current IF［A］ Tc=150℃ ［TYP］ Tc= 25℃ ［TYP］ 15 Tj=150℃ SIN 200 5 2 1 10 150 100 5 50 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0 2 4 6 8 10 0 1 2 5 10 IFSM 20 50 100 Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles  ［cycle］ Derating Curve Ta-Io Average Rectified Forward Current Io［A］ Sine wave R-load Free in air on glass−epoxy substrate Derating Curve Tc-Io Average Rectified Forward Current Io［A］ 14 12 Sine wave R-load With heatsink Tc Peak Surge Forward Current Capability 1000 3 heatsink Tc−sensing point 2.5 SIN 2 P.C.B Peak Surge Forward Current I FSM1［A］ 500 10 8 6 4 2 0 0 Tj=25℃ I （tp） FSM tp non−repetitive sine wave soldering land 3mm φ SIN 1.5 200 Tj=150℃ 1 100 0.5 0 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 50 1 2 3 4 5 6 7 8.3 Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］ US10KB80R Forward Voltage 50 30 Io Forward Power Dissipation 200 Peak Surge Forward Current Capability 20 25 tp T D=tp/T ［ Peak Surge Forward Current I FSM A］  Forward Power Dissipation PF［W］ IFSM 8.3ms Pulse measurement per diode 8.3ms Forward Current IF［A］ 10 Tc=150℃ ［TYP］ 5 2 1 0.5 0.2 0.1 0 Tc= 25℃ ［TYP］ 20 Tj=150℃ SIN 150 1cycle non−repetitive sine wave Tj=25℃ 15 100 10 50 5 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0 2 4 6 8 10 12 0 1 2 5 10 20 50 100 Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles  ［cycle］ Derating Curve Ta-Io Average Rectified Forward Current Io［A］ Average Rectified Forward Current Io［A］ 3 Sine wave R-load Free in air on glass−epoxy substrate Derating Curve Tc-Io 16 14 12 10 8 6 4 2 0 0 Sine wave R-load With heatsink Tc heatsink Tc−sensing point Peak Surge Forward Current Capability 500 Peak Surge Forward Current I FSM1［A］ 400 300 Tj=25℃ 200 Tj=150℃ 2.5 P.C.B I （tp） FSM tp non−repetitive sine wave SIN 2 soldering land 3mm φ SIN 1.5 1 0.5 100 90 80 70 60 50 3 4 5 6 7 8.3 0 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］ CAT.No.TJ 536 US15KB80R 50 20 CHARACTERISTIC DIAGRAMS Forward Voltage 40 Pulse measurement per diode Forward Power Dissipation 250 Io tp T D=tp/T Peak Surge Forward Current Capability  Forward Power Dissipation PF［W］ 35 30 Tj=150℃ Forward Current IF［A］ 10 5 2 1 0.5 0.2 0.1 0 Tc=150℃ ［TYP］ Tc= 25℃ ［TYP］ SIN ［ Peak Surge Forward Current I FSM A］ 200 IFSM 8.3ms 8.3ms 25 20 15 10 5 0 0 1cycle non−repetitive sine wave Tj=25℃ 150 100 50 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 5 10 15 20 0 1 2 5 10 20 50 100 Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles  ［cycle］ Derating Curve Ta-Io Average Rectified Forward Current Io［A］ Average Rectified Forward Current Io［A］ 3 Sine wave R-load Free in air Derating Curve Tc-Io 24 Sine wave R-load With heatsink Tc Tc heatsink Tc−sensing point Peak Surge Forward Current Capability 1000 2.5 P.C.B 20 Peak Surge Forward Current I FSM1［A］ 500 Tj=25℃ 200 I （tp） FSM tp non−repetitive sine wave on glass−epoxy substrate SIN 2 soldering land 3mm φ 16 SIN Tj=150℃ 1.5 12 100 1 8 50 0.5 4 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 20 3 4 5 6 7 8.3 Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］ US30KB80R Forward Voltage 100 80 Pulse measurement per diode Tc=150℃ ［TYP］ Tc= 25℃ ［TYP］ Forward Power Dissipation 500 Peak Surge Forward Current Capability ［ Peak Surge Forward Current I FSM A］  Forward Power Dissipation PF［W］ 70 tp T D=tp/T Io Forward Current IF［A］ 20 10 5 2 1 0.5 0.2 0.1 0 SIN 400 IFSM 8.3ms 50 60 Tj=150℃ 8.3ms 50 40 30 20 10 0 0 1cycle non−repetitive sine wave Tj=25℃ 300 200 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 5 10 15 20 25 30 35 40 0 1 2 5 10 20 50 100 Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles  ［cycle］ Derating Curve Ta-Io Average Rectified Forward Current Io［A］ Average Rectified Forward Current Io［A］ 3 Sine wave R-load Free in air on glass−epoxy substrate Derating Curve Tc-Io 50 Sine wave R-load With heatsink Tc heatsink Tc−sensing point Peak Surge Forward Current Capability 2000 Peak Surge Forward Current I FSM1［A］ 2.5 P.C.B 40 SIN 2 soldering land 3mm φ 1000 Tj=25℃ I （tp） FSM tp non−repetitive sine wave 30 SIN 1.5 500 Tj=150℃ 20 1 0.5 10 200 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 100 1 2 3 4 5 6 7 8.3 Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］ CAT.No.TJ 536 OUTLINE DIMENSIONS Package : D6K 22.1 −0.3 ＋ C3 − 3.45 ＋0.2 2− ＋ 0.15 US4K 80R Type No. 18.5 −0.3 ＋ 10 −0.15 ＋ R1.8 3.6 −0.2 0.1 ＋ 9771 Date code Control No. 2.05−0.2 ＋ ＋ 0.3 Polarity 2.5−0.2 2.2 ＋ 0.2 − ＋ 18.6 −0.8 2− 1 2 3 4 ＋ 1.1 −0.1 5.08 −0.3 5.08 −0.3 5.08 −0.3 ＋ ＋ ＋ ＋ 0.5 −0.1 0.05 ＋ 1 2 3 4 Unit： ■The level of quality of our products is intended for use in standard applications. OA and other office equipment, communication equipment, measuring instruments, （ home appliances, industrial equipment, etc.）In the case these products are to be used in equipment or devices in which failure or malfunction of a product may directly affect human life or health（Nuclear power control equipment, aerospace equipment, devices and systems for preserving life, transportation equipment, traffic control equipment, safety control devices, fire prevention/anti-theft equipment, combustion control equipment, etc.） always make sure to contact us in , advance. ■All specifications are subject to change without notice. ■Please contact us for the latest specifications before you order. ■Please use our products after confirming the details in the specifications and the application manuals. U.S.A Shindengen America, Inc. Head Office 161 Plaza La Vista Road, Camarillo, CA 93010 U.S.A. Phone:+1-805-445-8420 Fax:+1-805-445-8421 Chicago Office 2333 Waukegan Road, Suite 170 Bannockburn, IL. 60015 U.S.A. Phone:+1-847-444-1363 Fax:+1-847-444-0654 Europe Shindengen UK Ltd. Head Office Howard Court, 12 Tewin Road, Welwyn Garden City, Hertfordshire. AL7 1BW U.K. Phone:+44-1707-332992 Fax:+44-1707-332955 German Branch Kapell Strasse 6, D-40479, Dusseldorf, Germany Phone:+49-211-4919680 Fax:+49-211-4986499 Asia Shindengen Singapore PTE Ltd. 750D, Chai Chee Road, #05-01, Technopark@Chai Chee, Singapore 469004 Phone:+65-6445-0082 Fax:+65-6445-6089 Shindengen（H.K.）Co., Ltd. Head Office Suite 3206, 32/F, Tower 1, The Gateway, 25 Canton Road, TST, Kowloon, Hong Kong. Phone:+852-2317-1884 Fax:+852-2314-8561 Taipei Branch Room N1010, 10F, Chia-Hsin Bldg. 2 No. 96, Sec. 2, Chung Shan N. RD. Taipei, Taiwan R.O.C. Phone:+886-2-2560-3990 Fax:+886-2-2560-3991 Shanghai Liaison Office W504 Sun Plaza, No.88 Xian xia Road, Shanghai, 200336, China Phone:+86-21-6270-1173 Fax:+86-21-6270-0419 Shindengen Electric Mfg. Co., Ltd. Head Office New-Ohtemachi Bldg., 2-1 Ohtemachi 2-chome, Chiyoda-ku, Tokyo 100-0004, Japan Phone : +81-3-3279-4545, 4546, 4547 Fax : +81-3-3279-4519 Seoul Office Korea City Air-Terminal Bldg. 606, 159-6, Samsung-Dong, Kangnam-ku, Seoul, Korea Phone:+82-2-551-1431 Fax:+82-2-551-1432 【 URL 】 http://www.shindengen.co.jp ELECTRIC MFG. CO., LTD. 07600 NQ） （