BC846PN

BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one package 4 5 6 2 Tape loading orientation 3 VPS05604 1 PIN Configuration Type BC 846PN Marking Ordering Code 1Os Q62702-C2537 Package NPN-Transistor 1 = E 2 = B 6 = C SOT-363 PNP-Transistor 4 = E 5 = B 3 = C Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 65 80 80 5 100 200 250 150 -65...+150 ≤275 ≤140 K/W mW °C V V mA Unit V VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg RthJA RthJS 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BC 846PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics per Transistor Collector-emitter breakdown voltage Symbol min. Values typ. max. 15 5 nA µA 200 250 290 90 200 700 900 660 450 mV 300 650 V 580 750 820 V V Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE 65 80 80 5 - I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Collector-emitter breakdown voltage I C = 10 µA, VBE = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 °C DC current gain 1) I C = 10 µA, VCE = 5 V I C = 2 mA, V CE = 5 V Collector-emitter saturation voltage1) VCEsat I C = 10 mA, I B = 0.5 mA I C = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) VBEsat - I C = 10 mA, I B = 0.5 mA I C = 100 mA, IB = 5 mA Base-emitter voltage 1) VBE(ON) I C = 2 mA, V CE = 5 V I C = 10 mA, VCE = 5 V 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BC 846PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter AC Characteristics per Transistor Transition frequency Symbol min. Values typ. 250 2 10 4.5 2 330 30 max. kΩ 10-4 µs MHz pF Unit fT Ccb Ceb h11e h12e h21e h22e - I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BC 846PN Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 300 mW TS P tot 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C Kei 150 n TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01 BC 846PN Collector-base capacität CCB = f (V CBO) Emitter-base capacität CEB = f (VEBO) BC 846...850 EHP00361 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz EHP00363 C CB0 ( C EB0 ) 12 pF 10 fT 5 8 C EB 10 2 6 4 5 C CB 2 0 10 -1 5 10 0 V VCB0 10 1 (VEB0 ) 10 1 10 -1 5 10 0 5 10 1 mA 10 2 ΙC Collector cutoff current I CBO = f (T A) Collector-emitter saturation voltage VCB = 30V 10 4 nA EHP00381 IC = f (VCEsat), h FE = 20 10 2 EHP00367 Ι CB0 10 3 5 10 5 10 1 5 10 5 10 -1 0 2 ΙC mA 100 C 25 C -50 C max 10 1 5 typ 10 5 0 0 50 100 C 150 10 -1 0 0.1 0.2 0.3 0.4 TA V 0.5 VCEsat Semiconductor Group Semiconductor Group 55 Sep-07-1998 1998-11-01 BC 846PN DC current gain h FE = f (I C) Base-emitter saturation voltage VCE = 5V 10 3 EHP00365 IC = f (VBEsat), hFE = 20 10 2 EHP00364 h FE 5 100 C 25 C Ι C mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 0 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 ΙC V BEsat h parameter he = f (I C) normalized h parameter he = f (VCE) normalized VCE = 5V 10 2 EHP00368 IC = 2mA 2.0 EHP00369 he 5 he h 11e 1.5 Ι C = 2 mA h 21 e h 11 e 10 1 5 VCE = 5 V h 12e 1.0 h 12 e h 22 e 10 0 h 21e 5 0.5 h 22e 10 -1 0 10 -1 5 10 0 mA 10 1 0 10 20 V 30 ΙC Semiconductor Group Semiconductor Group 66 VCE Sep-07-1998 1998-11-01