BSS192

BSS 192 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSS 192 Type BSS 192 VDS -240 V ID -0.15 A RDS(on) 20 Ω Package SOT-89 Marking KB Ordering Code Q62702-S634 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -240 -240 Unit V VDS VDGR VGS ID RGS = 20 kΩ Gate source voltage Continuous drain current ± 20 A -0.15 TA = 34 °C DC drain current, pulsed IDpuls -0.6 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 18/02/1997 BSS 192 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS -240 -1.5 -0.1 -10 -10 10 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 -0.2 µA VDS = -240 V, VGS = 0 V, Tj = 25 °C VDS = -240 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -100 nA Ω 20 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -0.15 A Semiconductor Group 2 18/02/1997 BSS 192 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.06 0.12 95 20 10 - S pF 130 30 15 ns 8 12 VDS≥ 2 * ID * RDS(on)max, ID = -0.15 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Rise time tr 25 40 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Turn-off delay time td(off) 25 33 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Fall time tf 42 55 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Semiconductor Group 3 18/02/1997 BSS 192 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A -0.85 -0.15 -0.6 V -1.2 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = -0.3 A, Tj = 25 °C Semiconductor Group 4 18/02/1997 BSS 192 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V -0.16 1.2 W A 1.0 Ptot 0.9 0.8 ID -0.12 -0.10 0.7 0.6 0.5 -0.06 0.4 0.3 0.2 -0.02 0.1 0.0 0 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 °C 160 -0.04 -0.08 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -285 V -275 V(BR)DSS -270 -265 -260 -255 -250 -245 -240 -235 -230 -225 -220 -215 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 18/02/1997 BSS 192 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C -0.34 A -0.28 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 65 Ptot = 1W lk ji h g VGS [V] a -2.0 b -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 Ω 55 a b c d e f ID RDS (on) 50 45 40 35 30 25 20 15 10 VGS [V] = a b c d e f -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 g h i j -5.0 -6.0 -7.0 -8.0 k l -9.0 -10.0 -0.24 -0.20 e f c d e f g h i -0.16 -0.12 -0.08 d j k l g i k jl h c -0.04 0.00 0 -1 -2 -3 -4 -5 -6 -7 a b 5 0 -8 V -10 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 A -0.26 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max -0.40 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.20 S A ID -0.30 gfs 0.16 0.14 -0.25 0.12 0.10 0.08 0.06 -0.20 -0.15 -0.10 0.04 -0.05 0.00 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.02 0.00 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 VGS A ID -0.40 Semiconductor Group 6 18/02/1997 BSS 192 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.15 A, VGS = -10 V 50 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 Ω RDS (on) 40 35 30 25 20 15 10 5 0 -60 -20 20 60 100 °C 160 VGS(th) -3.6 -3.2 -2.8 98% -2.4 98% -2.0 -1.6 typ typ -1.2 2% -0.8 -0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs -10 0 pF C 10 2 A IF Ciss -10 -1 Coss 10 1 Crss -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 18/02/1997