BUZ103SL

BUZ 103 SL SPP28N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 28 A RDS(on) 0.05 Ω Package Ordering Code BUZ 103 SL TO-220 AB Q67040-S4008-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 28 20 Pulsed drain current TC = 25 °C IDpuls 112 E AS Avalanche energy, single pulse ID = 28 A, V DD = 25 V, RGS = 25 Ω L = 357 µH, Tj = 25 °C mJ 140 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 28 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 28 7.5 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 14 75 V W Semiconductor Group 1 30/Jan/1998 BUZ 103 SL SPP28N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤2 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 50 µA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 4.5 V, ID = 20 A V GS = 10 V, ID = 20 A Ω 0.04 0.025 0.05 0.03 Semiconductor Group 2 30/Jan/1998 BUZ 103 SL SPP28N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 20 A gfs S 10 pF 770 960 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 230 300 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 130 165 ns Turn-on delay time V DD = 30 V, VGS = 4.5 V, ID = 28 A RG = 6.8 Ω tr 10 15 Rise time V DD = 30 V, VGS = 4.5 V, ID = 28 A RG = 6.8 Ω td(off) 75 115 Turn-off delay time V DD = 30 V, VGS = 4.5 V, ID = 28 A RG = 6.8 Ω tf 30 45 Fall time V DD = 30 V, VGS = 4.5 V, ID = 28 A RG = 6.8 Ω Qg(th) 20 30 nC Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Qg(5) 1 1.5 Gate charge at 5.0 V V DD = 40 V, ID = 28 A, VGS =0 to 5 V Qg(total) 20 30 Gate charge total V DD = 40 V, ID = 28 A, VGS =0 to 10 V V (plateau) 32 50 V Gate plateau voltage V DD = 40 V, ID = 28 A - 4 - Semiconductor Group 3 30/Jan/1998 BUZ 103 SL SPP28N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 28 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 112 V Inverse diode forward voltage V GS = 0 V, IF = 56 A trr 1.1 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 60 90 µC Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.15 0.25 Semiconductor Group 4 30/Jan/1998 BUZ 103 SL SPP28N05L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 4 V 30 A 80 W Ptot ID 26 24 22 20 60 50 18 16 14 40 30 12 10 20 8 6 10 0 0 20 40 60 80 100 120 140 °C 180 4 2 0 0 20 40 60 80 100 120 140 °C 180 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID t = 15.0µs p ZthJC 10 2 V DS 10 0 /I D 10 -1 DS (o n) = 100 µs D = 0.50 10 -2 R 0.20 0.10 0.05 10 1 1 ms 10 -3 10 ms 0.02 single pulse 0.01 10 0 0 10 DC 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 30/Jan/1998 BUZ 103 SL SPP28N05L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 65 A 55 ID 50 45 40 35 30 25 20 15 10 5 0 a b c d e Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.16 Ptot = 75W l kj h i g VGS [V] a 2.5 Ω RDS (on) 0.12 a b c d e fb c d e f g h i j k l 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 0.10 0.08 0.06 f hi j g k 0.04 0.02 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 i h 6.5 7.0 j 8.0 k 10.0 0.00 V 5.0 0 10 20 30 40 A 55 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 60 A 50 I D 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 30/Jan/1998 BUZ 103 SL SPP28N05L Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 20 A, VGS = 4.5 V 0.16 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS,ID = 50µA 3.0 V 2.6 VGS(th) Ω RDS (on) 0.12 2.4 2.2 2.0 0.10 1.8 1.6 98% 1.4 1.2 1.0 max 0.08 0.06 typ 0.04 0.8 0.6 0.02 0.00 -60 -20 20 60 100 °C 180 0.4 0.2 0.0 -60 -20 20 60 100 140 V Tj typ min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 A C pF IF 10 2 10 3 Ciss 10 1 Tj = 25 °C typ Tj = 175 °C typ Coss Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 Crss 5 10 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 30/Jan/1998 BUZ 103 SL SPP28N05L Avalanche energy EAS = ƒ(Tj) parameter: ID = 28 A, VDD = 25 V RGS = 25 Ω, L = 357 µH 150 mJ 130 EAS 120 110 100 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 °C 180 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 28 A 16 V VGS 12 10 8 0,2 VDS max 6 0,8 VDS max 4 2 0 0 5 10 15 20 25 30 35 40 nC 50 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 30/Jan/1998