C67078-S1316-A2

BUZ 71 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 VDS 50 V ID 14 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1316-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 14 Unit A ID IDpuls 56 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14 1 mJ ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.6 µH, Tj = 25 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 3.1 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ 71 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.08 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.1 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 9 A Semiconductor Group 2 07/96 BUZ 71 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 4 7.7 450 220 85 - S pF 600 350 150 ns 20 30 VDS≥ 2 * ID * RDS(on)max, ID = 9 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time tr 40 60 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 55 70 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf 40 55 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 71 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1.5 60 0.1 14 56 V 1.8 ns µC Values typ. max. Unit TC = 25 °C Inverse diode direct current,pulsed ISM - TC = 25 °C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 28 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 71 Not for new design Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 15 A 45 W Ptot 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 °C 160 ID 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 t = 21.0µs p Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 A /ID = ) on S( RD K/W 100 µs ID 10 1 VD S ZthJC 1 ms 10 0 10 ms 10 -1 D = 0.50 0.20 10 0 0.10 DC 10 -2 single pulse 0.05 0.02 0.01 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 71 Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 32 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.32 Ptot = 40W l kj i h VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 A Ω RDS (on) 0.24 a b c d e f g ID 24 g c d 20 f e f 0.20 16 e g h i 0.16 h i j 12 dj k l 0.12 8 c 0.08 k 4 a b 0.04 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0 0.0 1.0 2.0 3.0 4.0 V 6.0 0.00 0 4 8 12 16 20 24 A 30 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 18 A parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 10 S ID 14 12 gfs 8 7 6 10 5 8 4 6 3 4 2 0 0 2 1 0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12 VGS A ID 16 Semiconductor Group 6 07/96 BUZ 71 Not for new design Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 9 A, VGS = 10 V 0.32 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V Ω RDS (on) 0.24 VGS(th) 98% 4.0 3.6 3.2 typ 0.20 2.8 2.4 0.16 2% 98% 0.12 2.0 1.6 1.2 0.8 typ 0.08 0.04 0.00 -60 -20 20 60 100 °C 160 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C 10 0 A IF 10 1 Ciss Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 71 Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 14 A, VDD = 25 V RGS = 25 Ω, L = 30.6 µH 6.5 mJ 5.5 V Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 22 A 16 EAS 5.0 4.5 4.0 3.5 VGS 12 0,2 VDS max 0,8 VDS max 10 8 3.0 2.5 2.0 1.5 1.0 0.5 0.0 20 40 60 80 100 120 °C 160 0 0 4 8 12 16 20 24 nC 30 4 6 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 71 Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96