SIDELED®
LS A670, LO A670, LY A670 LG A670, LP A670
Besondere Merkmale
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Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung für alle SMT-Bestück- und Reflow-Löttechniken geeignet gegurtet (12-mm-Filmgurt) Störimpulsfest nach DIN 40839
VPL06880
Features
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color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and reflow soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-11-12
LS A670, LO A670, LY A670 LG A670, LP A670
Typ
Emissionsfarbe Color of Emission
Type
Farbe der Lichtaustrittsfläche Color of the Light Emitting Area colorless clear
Lichtstärke
Lichtstrom
Bestellnummer
Luminous Intensity IF = 10 mA IV (mcd) 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 1.0 1.6 2.5 4.0 1.6 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... 20.0 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0
Luminous Flux IF = 10 mA ΦV (mlm) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 8 (typ.) 12 (typ.) 18 (typ.) -
Ordering Code
LS A670-HL LS A670-J LS A670-K LS A670-L LS A670-JM LO A670-HK LO A670-J LO A670-K LO A670-L LO A670-JM LY A670-HK LY A670-J LY A670-K LY A670-L LY A670-JM LG A670-HK LG A670-J LG A670-K LG A670-L LG A670-JM LP A670-FJ LP A670-G LP A670-H LP A670-J LP A670-GK
super-red
Q62703-Q3908 Q62703-Q2833 Q62703-Q2834 Q62703-Q3840 Q62703-Q2835 Q62703-Q2547 Q62703-Q2837 Q62703-Q3204 Q62703-Q2836 Q62703-Q2838 Q62703-Q2552 Q62703-Q2839 Q62703-Q2840 Q62703-Q3920 Q62703-Q2841 Q62703-Q2543 Q62703-Q2842 Q62703-Q2843 Q62703-Q3192 Q62703-Q2844 Q62703-Q2549 Q62703-Q2845 Q62703-Q2846 Q62703-Q3214 Q62703-Q2847
orange
colorless clear
yellow
colorless clear
green
colorless clear
pure green
colorless clear
... 8.0 ... 3.2 ... 5.0 ... 8.0 ... 12.5
Streuung der Lichtstärke in einer Verpackungseinheit IV min/ IV min ≤ 2.0. Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.
Semiconductor Group
2
1998-11-12
LS A670, LO A670, LY A670 LG A670, LP A670
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlaßstrom Forward current Stoßstrom Surge current t ≤ 10 µs, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgröße je ≥ 16 mm2) mounted on PC board*) (pad size ≥ 16 mm2each) *) PC-board: FR4 Symbol Symbol Werte Values – 55 ... + 100 – 55 ... + 100 + 100 30 0.5 Einheit Unit ˚C ˚C ˚C mA A
Top Tstg Tj IF IFM
VR Ptot Rth JA
5 100 430
V mW K/W
Semiconductor Group
3
1998-11-12
LS A670, LO A670, LY A670 LG A670, LP A670
Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlänge Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaßspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazität Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 µs, RL = 50 Ω (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol LS LO 610 Werte Values LY 586 LG 565 LP 557 nm 635 Einheit Unit
λpeak
λdom
628
605
590
570
560
nm
∆λ
45
40
45
25
22
nm
2ϕ
120 2.0 2.6
120 2.0 2.6
120 2.0 2.6
120 2.0 2.6
120 2.0 2.6
Grad deg. V V
VF VF IR IR C0
0.01 0.01 0.01 0.01 0.01 µA 10 10 10 10 10 µA 12 8 10 15 15 pF
(typ.) (typ.)
tr tf
300 150
300 150
300 150
450 200
450 200
ns ns
Semiconductor Group
4
1998-11-12
LS A670, LO A670, LY A670 LG A670, LP A670
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 10 mA Relative spectral emission V(λ) = spektrale Augenempfindlichkeit Standard eye response curve
100 % Ι rel 80
OHL01698
Vλ
60
red
pure-green green
orange
20
0 400
blue
450
500
550
yellow
40
600
super-red
650
hyper-red
nm
700
λ
Abstrahlcharakteristik Irel = f (ϕ) Radiation characteristic
40˚ 30˚ 20˚ 10˚ 0˚
OHL01660
ϕ
1.0
50˚
0.8
0.6 60˚ 0.4 70˚ 0.2 80˚ 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0
Semiconductor Group
5
1998-11-12
LS A670, LO A670, LY A670 LG A670, LP A670
Durchlaßstrom IF = f (VF) Forward current TA = 25 ˚C
10 2
OHL02145
Relative Lichtstärke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 ˚C
10 1 ΙV Ι V (10 mA) 10 0
OHL02146
Ι F mA
10 1 5
5
10 -1 5
pure-green 10 0 5 super-red orange/yellow green 1.4 1.8 2.2 2.6 3.0 V 3.4
10 -2 5
green red yellow super-red orange pure-green
-1
10 -1 1.0
10 -3 10
5 10
0
5
10
1
mA 10
2
VF
ΙF
Zulässige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 ˚C
10 3
OHL01686
Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA)
60 mA 50
OHL01661
ΙF
mA
tP D=
tP
T T
ΙF
ΙF
D = 0.005 0.01 0.02 0.05 0.1
10 2 0.2
40
30
5
0.5 DC
20
10
10 1 -5 10
10 -4
10 -3
10 -2
10 -1
10 0 s 10 1 tp
0
0
20
40
60
80 ˚C 100 TA
Semiconductor Group
6
1998-11-12
LS A670, LO A670, LY A670 LG A670, LP A670
Wellenlänge der Strahlung λpeak = f (TA) Wavelength at peak emission IF = 10 mA
690
OHL02104
Dominantwellenlänge λdom = f (TA) Dominant wavelength IF = 10 mA
690
OHL02105
λ peak
nm 650 super-red 630 orange 610 590 570 550 yellow
λ dom
nm 650 630 610 590 570 550 super-red
orange yellow green pure-green 0 20 40 60 80 ˚C 100
green pure-green 0 20 40 60 80 ˚C 100
TA
TA
Durchlaßspannung VF = f (TA) Forward voltage IF = 10 mA
2.4
OHL02106
Relative Lichtstärke IV / IV(25 ˚C ) = f (TA) Relative luminous intensity IF = 10 mA
2.0 ΙV Ι V (25 ˚C) 1.6
OHL02150
VF
V 2.2
2.0 green super-red orange yellow
1.2
yellow green
1.8
0.8
pure-green
orange super-red pure-green
1.6
0.4
1.4
0
20
40
60
80 ˚C 100
0.0
0
20
40
60
80 ˚C 100
TA
TA
Semiconductor Group
7
1998-11-12
LS A670, LO A670, LY A670 LG A670, LP A670
Maßzeichnung Package Outlines
(Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified)
(2.4)
2.8 2.4
4.2 3.8 0.7
Cathode Cathode marking
2.54 spacing (1.4)
1.1 0.9 Anode
(0.3)
(2.85)
(2.9)
(R1)
3.8 3.4
4.2 3.8
Kathodenkennung: Cathode mark:
abgeschrägte Ecke bevelled edge
Semiconductor Group
8
1998-11-12
GPL06880
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