Q62702-S499

BSS 100 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S206 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.22 TA = 33 °C DC drain current, pulsed IDpuls 0.9 TA = 25 °C Power dissipation Ptot 0.63 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 100 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 1.5 0.1 2 1 1 3.5 5 2 1 60 10 10 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 6 10 VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 20 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.22 A VGS = 4.5 V, ID = 0.22 A Semiconductor Group 2 12/05/1997 BSS 100 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.08 0.22 65 10 4 - S pF 85 15 6 ns 5 8 VDS≥ 2 * ID * RDS(on)max, ID = 0.22 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Rise time tr 5 8 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Turn-off delay time td(off) 10 13 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Fall time tf 12 16 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 100 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.9 0.22 0.9 V 1.3 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.44 A Semiconductor Group 4 12/05/1997 BSS 100 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.24 A 0.20 0.70 W 0.60 Ptot 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 ID 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.15 0.10 0.05 0.00 0 0.04 0.02 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 1 V(BR)DSS 14 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 100 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0.50 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 19 Ptot = 1W j lki h g f e VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 Ω 16 a b c d ID 0.40 0.35 0.30 0.25 0.20 RDS (on) 14 12 10 8 6 4 i k e f g j h c d e f dg h i c j k l 0.15 0.10 b 0.05 a 2 VGS [V] = a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0.00 0.0 1.0 2.0 3.0 4.0 5.0 V 6.5 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 A 0.50 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 1.0 A Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.40 S ID 0.8 0.7 0.6 0.5 0.4 0.3 gfs 0.30 0.25 0.20 0.15 0.10 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 V 10 0.05 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VGS A ID 0.8 Semiconductor Group 6 12/05/1997 BSS 100 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.22 A, VGS = 10 V 15 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 13 RDS (on) 12 11 10 9 8 7 6 5 4 3 2 1 0 -60 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 1.6 typ typ 1.2 2% 0.8 0.4 -20 20 60 100 °C 160 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 0 pF C 10 2 A IF 10 - 1 Ciss 10 1 Coss 10 - 2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) Crss 10 0 0 5 10 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997