Q62702G62

CGY 184 GaAs MMIC Preliminary Data l l l l l l Power amplifier for PCN applications 2.5 W (34dBm) output power at 3.5 V Overall power added efficiency 43 % Fully integrated 4 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CGY 184 CGY 184 Q62702G62 MW 16 Maximum ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation duty cycle 12.5%, ton=0.577ms Total power dissipation (Tc Tc: Temperature on case Thermal Resistance Characteristics Junction-Case 2) 1) 2) Symbol VD max. Value 9 4 150 -55...+150 tbd 8.5 Unit V A °C °C W W ID TCh Tstg PPulse Ptot  ƒ& Symbol max. Value ≤8.5 Unit K/W RthJC Dimensions see page 14 see also page 9 Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 Functional block diagram Vc on (2 ) VD1(4) VD2(7) VD3(8) Vneg(15) control circuit Pout/VD4 (9,10,11 Pin(3) GND1(5) GND2(6) GND3(17) Pin # 1 2 3 4 5 6 7 8 9,10,11 12 13 14 15 16 (17) n. c. Vcon PIN VD1 Gnd1 Gnd2 VD2 VD3 POUT/VD4 n. c. n. c. n. c. Vneg n. c. GND3 Configuration Control voltage for power ramping RF-input Drain voltage 1st stage Ground pin 1st stage Ground pin 2nd stage Drain voltage 2nd stage Drain voltage 3rd stage Drain voltage 4th stage and RF-output Block capacitor negativ voltage generator Ground (backside of MW16 housing) Siemens Aktiengesellschaft Semiconductor Group 2 2 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 Electrical characteristics (TA = 25°C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.5V, Vaux=3.5V, Vcontrol=2.5V, unless otherwise specified; pulsed with a duty cycle of 12.5%, ton=577usec) Characteristics Supply current VD=3.5V; Pin=0dBm Supply current neg. voltage gener. Vaux=3.5V Control Current Shut-off current ( Vc=0V, VD=3.5V, no RF- drive ) Small signal gain Pin =-10dBm Power gain VD=3.5V; Pin=0dBm Output Power VD=3.5V; Pin=0dBm Power gain VD=3.5V; Pin=0dBm, T=85°C Output Power VD=3.5V; Pin=0dBm, T=85°C Overall Power added Efficiency VD=3.5V; ; VC=2.5V; Pin=0dBm Dynamic range (Pout,max-Pout,min) VC= 0.5....2.5V Harmonics VC=2.2V, Pin=0dBm RX-Noise Power VC=2.2V; Pin=0dBm ; fRX=1.805....1.88GHz Input VSWR VD=3.5V 2f0 3f 0 Symbol min typ 1.67 10 2 40 40 34 34 33.7 33.7 43 80 -60 -40 -80 max 3 Unit A mA mA µA dB dB dBm dB dBm % dB dBc dBm/ 100kHz - IDD Iaux IC ID G G Po G Po - 1.8 : 1 - Siemens Aktiengesellschaft Semiconductor Group 3 3 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 DC-ID(Vneg) characteristics – typical values of stage 1 and 2, VD=3V 0,35 High current Medium current Low current 0,25 0,3 ID [A] 0,2 0,15 0,1 0,05 0 -5 -4,5 -4 -3,5 -3 -2,5 Vneg [V] -2 -1,5 -1 -0,5 0 DC-Output characteristics – typical values of stage 1 and 2 0,25 Ptot=223.7m W Vneg=-0.25 0,2 -0.50 V -0.75 V 0,15 ID [A] -1.00 V -1.25 V 0,1 -1.50 V -1.75 V 0,05 -2.00 V -2.25 V 0 0 0,5 1 1,5 2 2,5 3 3,5 VD [V] 4 4,5 5 5,5 6 6,5 Pin 2( Vcon ) has to be open during measuring DC-characteristics Siemens Aktiengesellschaft Semiconductor Group 4 4 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 DC-ID(Vneg) characteristics – typical values of stage 3, VD=3V 2 High current Medium current Low current 1,4 1,2 1 0,8 0,6 0,4 0,2 0 -5 -4,5 -4 -3,5 -3 -2,5 Vneg [V] -2 -1,5 -1 -0,5 0 1,8 1,6 ID [A] DC-Output characteristics – typical values of stage 3 1,4 Vneg=-0.25 1,2 Ptot=1.34 W -0.50 V 1 -0.75 V -1.00 V -1.25 V -1.50 V 0,8 ID [A] 0,6 0,4 -1.75 V -2.00 V 0,2 -2.25 V 0 0 0,5 1 1,5 2 2,5 3 3,5 VD [V] 4 4,5 5 5,5 6 6,5 Pin 2( Vcon ) has to be open during measuring DC-characteristics Siemens Aktiengesellschaft Semiconductor Group 5 5 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 DC-ID(Vneg) characteristics – typical values of stage 4, VD=3V High current Medium current Low current 10 9,5 9 8,5 8 7,5 7 6,5 6 5,5 5 4,5 4 3,5 3 2,5 2 1,5 1 0,5 0 -3 -2,5 Vneg [V] -2 -1,5 -1 -0,5 0 ID [A] -5 -4,5 -4 -3,5 DC-Output characteristics – typical values of stage 4 7 Vneg=-0.25 6 Ptot=6.7 W -0.50 V 5 -0.75 V -1.00 V -1.25 V 4 ID [A] 3 -1.50 V 2 -1.75 V -2.00 V 1 -2.25 V 0 0 0,5 1 1,5 2 2,5 3 3,5 VD [V] 4 4,5 5 5,5 6 6,5 Pin 2( Vcon ) has to be open during measuring DC-characteristics Siemens Aktiengesellschaft Semiconductor Group 6 6 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 Pout and PAE vs. Pin ( VD=Vaux =3.5V, VCon =2.2V, CLK=10MHz/3.5V/0V, f=1.75GHz, duty cycle 10%,on =0.33ms ) t 36 34 32 30 Pout [dBm] PAE [%] 45 40 35 30 Po ut 28 [d B 26 m] 24 22 20 18 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 P A E 20 [% 25 15 10 5 0 -4 -3 -2 -1 0 1 2 3 4 Pin [dBm] Pout and PAE vs. Vcon 40 30 20 Po 10 ut 0 [d B m] -10 -20 -30 -40 -50 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 1,1 1,2 1,3 Vcon [V] 1,4 1,5 1,6 1,7 1,8 1,9 2 2,1 2,2 2,3 2,4 Pout [dBm] PAE [%] ( VD=Vaux=3.5V, CLK=10MHz/3.5V/0V,f=1.75GHz,P in=0dBm, duty cycle 10%, ton=0.33ms ) 45 40 35 30 PA 25 E [%] 20 15 10 5 0 Siemens Aktiengesellschaft Semiconductor Group 7 7 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 Output power at different temperatures ( VD=VAUX=3.5V, VCon=2.2V, CLK=0V/3.5V/10MHz, f=1.75GHz, P =0dBm, duty cycle 10%, ton=0.33ms ) in 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 -15 T=-20°C T=25°C T=85°C -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin [dBm] Power added efficiency at different temperatures ( VD=VAUX=3.5V, VCon=2.2V, CLK=0V/3.5V/10MHz, f=1.75GHz, P =0dBm, duty cycle 10%, ton=0.33ms ) in 45 40 35 30 25 20 15 T=-20°C T=25°C T=85°C 10 5 0 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin [dBm] Siemens Aktiengesellschaft Semiconductor Group 8 8 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 CGY184 P out vs. V C ( VD =VAUX =3.5V, CLK=3.5V/0V/13MHz, f=1.75GHz, duty cycle 10%, t 40 30 20 10 0 -10 T=25°C T=-20°C T=85°C -30 -40 -50 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 on =0.33ms ) -20 VCon [V] AM – PM Conversion: ( Conditions: VD=VAUX=3.5V, f=1.75GHz, CLK=10MHz/3.5V/0V, Pout controlled by VCon ) VCon [V] 2,2 2,1 2 1,9 1,8 1,7 1,6 1,5 1,4 1,3 1,2 1,1 1 0,9 Siemens Aktiengesellschaft Semiconductor Group ∆ϕ [deg/dB] 2,8 3 2,7 2,6 2,5 2,4 1,5 0,5 -0,3 -0,2 -0,2 0,4 -0,2 0,3 9 9 Pout [dBm] 34,53 34,53 34,37 34,2 33,87 33,37 32,37 30,2 26,7 21,2 12,87 3,37 -11,63 -24,8 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 AM - PM - conversion ∆ϕ vs. Pout (V D=V AUX=3.5V, CLK=10MHz/3.5V/0V,P in=0dBm, f=1.75GHz, duty cycle 10%, T=25°C) 3,5 3 2,5 2 [d eg 1,5 ∆ϕ 1 0,5 0 -0,5 35 30 25 20 15 10 5 Pout [dBm] 0 -5 -10 -15 -20 -25 Ptotmax in mW 10000 9000 8000 Power Dissipation in mW 82 7000 6000 5000 4000 3000 2000 1000 0 0 20 40 60 80 100 120 140 160 Ptot max = f ( Tc ) Pt t Tem perature Tc in °C Siemens Aktiengesellschaft Semiconductor Group 10 10 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 Thermal Resistance and Temperature Considerations: Because the MW16 heat sink is not easily accessible to a temperature measurment the thermal resistance is defined as RthJC using the case temperature TC l Calculation of Junction Temperature TJ : TJ = TC + RthJC * Ptot l Measurment of Case Temperature TC : Tc should be measured in operation at the upper side of the case where the temperature is highest. Small thermoelements ≤ 1mm (thin wires, thermopaste) and thermopapers with low heat dissipation are well suited. Thermoelement for Tcase Case ( C ) Junction ( J ) PCB s oldered Heatsink Ambient ( A ) Siemens Aktiengesellschaft Semiconductor Group 11 11 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 CGY184 application board: BC848B 680R 1n 1 0u H 3k9 1n 1n 33p 4 7n 5p 15p 330p 33nH 1p 1n Layout size is 32mm x 19mm Connections: l Vd 2.7 to 6VDC, pulsed (PCN: 12,5% duty cycle, ton=0.577ms) l Vaux 2.7 to 6VDC l Vcontrol 0.2 to 2.2VDC (0.2V: min Pout, 2.2V: max Pout) l CLK 5 MHz to 15 MHz (with a 10uH inductor) or 150 kHz to 250 kHz (with a 100uH inductor instaed of the 10uH) (rectangular signal, 50% duty, 0 Volt to Vd voltage level) Power on sequence: 1. continuous clock (CLK) on 2. turn on Vaux ==> check negative voltage at pin#16 (-4......-10V) 3. turn on Vcon (may be at the same time as 2) turn on Drainvoltage Vd turn on Input Power Operation without using the negative voltage generator: If you don’t want to use the internal negative voltage generator, you can also apply -4....-6 V at pin#15 (Vneg-Pin). In this case the passive devices at the pins 1, 14 and 16 are not necessary (1 inductor and 3 capacitors). Siemens Aktiengesellschaft Semiconductor Group 12 12 B S4-0 W A 04 1n 2.2nH 33p 120 p 4,7 µ 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 Vaux L11 R11 C14 (Vneg) Vcon C9 Vcon Vneg D1.2 C13 D1.1 C12 T1 R12 CLK C11 RF IN C8 C10 RFin VD1 GND1 GND2 VD2 VD3 CGY184 RFout RFout RFout L2 RF OUT C4 C3 L1 C5 C7 C6 C2 C1 Vd Part List: CGY184 L1 L2 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 * 33nH* 2.2nH** 4.7µF 120pF 5pF 1pF 33pF 1nF 330pF 15pF 1nF 33pF Negative Voltage Generator D1 T1 L11 C11 C12 C13 C14 R11 R12 BAS40-04W BC848B 10uH*** 1nF 1nF 47nF 1nF 3.8kOhm 680Ohm 33nH SMD-Inductor for drain3: Part Number BV1250 distribution by Horst David GmbH, 85375 Neufarn, Germany Phone-No ..8165/9548-0 , Fax-No ..8165/9548-28 ** Toko Type LL1608-FH Chip Induktor *** Chip-Induktor Simid02 (Siemens-Matsushita Ordering-Code: B82422-A1103-K100 ) Siemens Aktiengesellschaft Semiconductor Group 13 13 23.07.97 1998-11-01 HL HF PE GaAs CGY 184 Semiconductor Device Outline MW16 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer Siemens Aktiengesellschaft Semiconductor Group 14 14 23.07.97 1998-11-01 HL HF PE GaAs