Q67000-A9109

TLE 4261 5-V Low-Drop Voltage Regulator TLE 4261 Bipolar IC Features q q q q q q q q q q q q q Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity Input voltage up to 42 V Overvoltage protection up to 65 V (≤ 400 ms) Short-circuit proof External setting of reset delay Integrated watchdog circuit Wide temperature range Overtemperature protection Suitable for automotive use EMC proofed (100 V/m) P-TO220-7-1 P-TO220-7-2 Type w TLE 4261 w TLE 4261 S w TLE 4261 G Ordering Code Q67000-A9003 Q67000-A9109 Q67000-A9059 Package P-TO220-7-1 P-TO220-7-2 P-DSO-20-6 (SMD) w Please also refer to the new pin compatible device TLE 4271 P-DSO-20-6 Functional Description TLE 4261 is a 5-V low-drop voltage regulator in a P-TO220-7 or in a P-DSO package. The maximum input voltage is 42 V (65 V/≤ 400 ms). The device can produce an output current of more than 500 mA. It is short-circuit proof and incorporates temperature protection that disables the circuit at impermissibly high temperatures. Semiconductor Group 1 1998-11-01 TLE 4261 Application Description The IC regulates an input voltage VI in the range VI = 6 V to 40 V to VQrated = 5.0 V. A reset signal is generated for a maximum output voltage of VQ less than 4.75 V. The reset delay can be set externally with a capacitor. A connected microprocessor is monitored by the integrated watchdog circuit. Connecting this input to the input voltage makes the watchdog function inactive. The presence of a voltage less than 2 V on inhibit input disables the regulator. The current consumption drops to max. 50 µA. Design Notes for External Components The input capacitor CI causes a low-resistant powerline and limits the rise times of the input voltage. The IC is protected against rise times up to 100 V/µs. It is possible to damp the tuned circuit consisting of supply inductance and input capacitance with a resistor of approx. 1 Ω in series to CI. The output capacitor maintains the stability of the regulating loop. Stability is guaranteed with a rating of 22 µF at an ESR of 3 Ω max. in the operating temperature range. Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and controls the base of the series PNP transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the output voltage drops below 95.5 % of its typical value for more than 2 µs, a reset signal is triggered on pin 3 and an external capacitor is discharged on pin 5. The reset signal is not cancelled until the voltage on the capacitor has exceeded the upper switching threshold VDT. A positive-edge-triggered watchdog circuit monitors the connected microprocessor and will likewise trigger a reset if pulses are missing. The IC can be disabled by a low level on the inhibit input and the current consumption drops to < 50 µA. The IC also incorporates a number of circuits for protection against: q q q q Overload Overvoltage Overtemperature Reverse polarity Semiconductor Group 2 1998-11-01 TLE 4261 Pin Configuration (top view) TLE 4261 TLE 4261 S 1 2 345 6 7 1 2 345 6 7 VΙ INH GND Watch QRES DRES VQ AEP00592 VΙ INH GND Watch QRES DRES V Q AEP01181 Pin Definitions and Functions (TLE 4261; S) Pin 1 Symbol Function Input voltage; block a capacitor directly to ground on the IC. The capacitor rating will depend on the vehicle electrical system. Oscillation of the input voltage can be damped by a resistor of approx. 1 Ω in series with the input capacitor. Inhibit; switches off the IC when low. Reset output; open-collector output controlled by the rese delay. Ground Reset delay; wired to ground using a capacitor. Watchdog; monitors the microprocessor when active. 5-V output voltage; block to ground using a capacitor of ≥ 22 µF. ESR is ≤ 3 Ω in the operating temperature range. 3 1998-11-01 VI 2 3 4 5 6 7 INH QRES GND DRES Watch VQ Semiconductor Group TLE 4261 Pin Configuration (top view) TLE 4261 G N.C. N.C. QRES GND GND GND GND N.C. DRES N.C. 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 AEP01182 INH N.C. VΙ GND GND GND GND N.C. VQ Watch Pin Definitions and Functions (TLE 4261 G) Pin 18 Symbol Function Input voltage; block a capacitor directly to ground on the IC. The capacitor rating will depend on the vehicle electrical system. Oscillation of the input voltage can be damped by a resistor of approx. 1 Ω in series with the input capacitor. Inhibit; switches off the IC when low. Reset output; open-collector output controlled by the reset delay. Ground; internally connected with pins 14 to 17. Reset delay; wired to ground using a capacitor. Watchdog; monitors the microprocessor when active. 5-V output voltage; block to ground using a capacitor of ≥ 22 µF. ESR is ≤ 3 Ω in the operating temperature range. Not connected VI 20 3 4-7 14 - 17 9 11 12 INH QRES GND DRES Watch VQ 1, 2, 8, 10, N.C. 13, 19 Semiconductor Group 4 1998-11-01 TLE 4261 Overvoltage Monitoring Temperature Sensor Saturation Control and Protection Input 1 (18) BANDGAP Reference Control Amplifier Buffer + - 7 Output (12) RESET Generator 5 (9) 3 (3) RESET Delay RESET Output Adjustment Inhibit (4-7) (14-17) 4 GND Watchdog (20) 2 Inhibit Numbers in parentheses for TLE 4261 G (11) 6 Watchdog AEB00002 Block Diagram Semiconductor Group 5 1998-11-01 TLE 4261 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. Input Input voltage Input voltage Input current Inhibit Voltage Current Reset Output Voltage Current Ground Current Reset Delay Voltage Current Watchdog Voltage Output Differential voltage Current max. Unit Remarks VI VI II – 42 – – 45 65 1.6 V V A – t ≤ 400 ms – V2 I2 – 0.3 – 42 5 V mA – – VR IR – 0.3 – 42 – V – – limited internally IGND – 0.5 A – VD ID – 0.3 – 42 – V – – limited internally VW – 0.3 VI V – VI – VQ IQ – 5.25 – VI 1.4 V A – – Semiconductor Group 6 1998-11-01 TLE 4261 Absolute Maximum Ratings (cont’d) Tj = – 40 to 150 °C Parameter Symbol Limit Values min. Temperature Junction temperature Storage temperature Operating Range Input voltage Junction temperature Thermal Resistances System-air System-case 1) Unit Remarks max. Tj Tstg – – 50 150 150 °C °C – – VI Tj – – 40 32 150 V °C see diagram – Rth SA Rth SC – 65 (70) 1) K/W – 3 (15) 1) K/W – Figures in parenthesis refer to TLE 4261 G. Semiconductor Group 7 1998-11-01 TLE 4261 Characteristics VI = 13.5 V; Tj = 25 °C; V2 ≥ 6 V; (unless specified otherwise) Parameter Symbol Limit Values min. typ. max. Unit Test Condition Normal Operation Output voltage VQ 4.75 5.00 5.25 V 25 mA ≤ IQ ≤ 500 mA; 6 V ≤ VI ≤ 28 V; – 40 °C ≤ Tj ≤ 125 °C 25 mA ≤ IQ ≤ 150 mA 6 V ≤ VI ≤ 40 V 0 V ≤ VI ≤ 2 V; V2 = VI; – 40 °C ≤ Tj ≤ 125 °C Output voltage Output current Output current Current consumption; Iq = II – IQ Current consumption; Iq = II – IQ Current consumption; Iq = II – IQ Current consumption; Iq = II – IQ Drop voltage Drop voltage Load regulation Supply voltage regulation Supply voltage regulation VQ IQ IQ Iq Iq Iq Iq VDr VDr ∆VQ ∆VQ ∆VQ 4.85 – 500 – – – – – – – – – 5.00 – 1000 – 5.0 40 45 0.35 0.2 15 15 5 5.15 50 – 3.5 10 65 80 0.5 0.3 35 50 25 V µA mA mA mA mA mA V V mV mV mV VI = 17 V to 28 V IQ = 0; VW > 6 V 6 V ≤ VI ≤ 28 V IQ = 150 mA 6 V ≤ VI ≤ 28 V IQ = 500 mA VI < 6 V; IQ ≤ 500 mA; VI = 4.5 V; IQ = 0.5 A VI = 4.5 V; IQ = 0.15 A 25 mA ≤ IQ ≤ 500 mA 6 V ≤ VI ≤ 28 V IQ = 100 mA 6 V ≤ VI ≤ 16 V IQ = 100 mA Semiconductor Group 8 1998-11-01 TLE 4261 Characteristics (cont’d) VI = 13.5 V; Tj = 25 °C; V2 ≥ 6 V; (unless specified otherwise) Parameter Symbol Limit Values min. Ripple rejection Temperature drift of output voltage typ. 54 2× 10– 4 max. – – dB Unit Test Condition SVR αVQ – – fr = 100 Hz; Vr = 0.5 Vpp 1/°C – 40 °C ≤ Tj ≤ 150 °C Inhibit Operation Current consumption Current consumption Switching threshold for inhibit Switching threshold for inhibit I1 I2 V2 V2 – – 5.0 2.0 – – 5.5 2.7 50 100 6.0 3.7 µA µA V V V2 < 2 V; IQ = 0 V2 = 6 V IC turned ON IC turned OFF Reset Generator Switching threshold Saturation voltage, reset output Reverse current Charge current Switching threshold Delay switching threshold Saturation voltage, delay output VRT VR IR Id VST VDT VC 94 – – 95.5 0.25 – 97 0.40 1 % V µA in % of VQ IQ > 500 mA; VI = 6 V IR = 1 mA VR = 5 V VC = 1.5 V – – 18.75 25 0.9 2.25 – 1 2.50 – 31.25 µA 1.1 2.75 100 V V mV VI = 4.5 V and Id Semiconductor Group 9 1998-11-01 TLE 4261 Characteristics (cont’d) VI = 13.5 V; Tj = 25 °C; V2 ≥ 6 V; (unless specified otherwise) Parameter Symbol Limit Values min. Delay time Delay time typ. 10 2 max. – – ms µs Unit Test Condition tD tt – – CD = 100 nF – Watchdog Turn-OFF voltage Discharge current Switching voltage Pulse interval VW ICD VCD TW 5.2 5.6 2.95 – 5.6 7.5 3.05 35 6.0 9.4 3.15 – V µA V ms – VC = 1.5 V – CD = 100 nF General Data Turn-OFF voltage Turn-OFF hysteresis Leakage current Reverse output current VIOFF ∆VI 41 – – – 43 6.5 – – 45 – 50 1.5 V V µA mA IQ < 1 mA – IQS IQR VQ = 0 V; VI = 45 V VQ = 5 V; VI and V2 open Semiconductor Group 10 1998-11-01 TLE 4261 Input 6 V to 40 V 1 470 nF 2 6 7 5 22 µF 100 nF Output 100 k Ω RESET TLE 4261 3 4 4.7 k Ω From µ C AES00021 KL15 7 V to 18 V Application Circuit ΙΙ 1000 µF 1 7 Ι Q / Ι SC 22 µF 470 nF TLE 4261 VΙ + VR 4.7 k Ω VQ Ι3 2 5 4 ΙD Ι GND CD 100 nF 6 3 ΙR VR V2 VC VW VDr = VΙ -VQ AES00135 V SVR = 20 log R ∆VQ Test Circuit Semiconductor Group 11 1998-11-01 TLE 4261 ( V CD – V ST ) ( I CD + I D ) ( V DT – V ST ) t W ----------------------------------------------------------- C D ; t dw = ------------------------------- CD I D × I CD ID Time Response in Watchdog Condition V Wmin > 6 V VW V ΙOFF VΙ 3.3 V ∆V RT