Q67000-S200

BSP 298 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 298 Type BSP 298 VDS 400 V ID 0.5 A RDS(on) 3Ω Package SOT-223 Marking BSP 298 Ordering Code Q67000-S200 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values 0.5 Unit A ID IDpuls 2 TA = 26 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 130 mJ ID = 1.35 A, VDD = 50 V, RGS = 25 Ω L = 125 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.8 V W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 298 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 400 3 0.1 10 10 2.2 4 V VGS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 3 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.5 A Semiconductor Group 2 Sep-12-1996 BSP 298 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.5 1.2 300 50 20 - S pF 400 75 30 ns 10 15 VDS≥ 2 * ID * RDS(on)max, ID = 0.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rise time tr 25 40 VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Turn-off delay time td(off) 30 40 VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Fall time tf 20 30 VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 298 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A 0.95 300 2.5 0.5 2 V 1.2 ns µC Values typ. max. Unit ISM VSD trr Qrr TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 1 A, Tj = 25 °C Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 Sep-12-1996 BSP 298 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.55 A 2.0 W Ptot 1.6 1.4 1.2 ID 0.45 0.40 0.35 0.30 1.0 0.25 0.8 0.20 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 0.15 0.10 0.05 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 0.05 0.02 0.01 10 -2 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 298 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C l Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 10 1.2 A 1.0 Ptot = 2W j f i h e d g c k b VGS [V] a 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Ω RDS (on) 8 7 6 5 4 3 2 l a ID 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 a b c d e f g h i j k l b j h ic e d fg k 1 0 V 10 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0.00 0.10 0.20 0.30 0.40 A 0.60 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 2.6 A 2.2 2.6 S 2.2 ID 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V 10 gfs 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.4 0.8 1.2 1.6 A ID 2.2 VGS Semiconductor Group 6 Sep-12-1996 BSP 298 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.5 A, VGS = 10 V 7.5 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 6.5 98% RDS (on) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -20 20 60 100 °C 160 VGS(th) 3.6 3.2 2.8 typ 98% 2.4 2.0 2% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 nF C 10 0 A IF 10 0 Ciss 10 -1 10 -1 Tj = 25 °C typ Coss Tj = 150 °C typ Tj = 25 °C (98%) Crss 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 Tj = 150 °C (98%) 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 298 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 1.35 A, VDD = 50 V RGS = 25 Ω, L = 125 mH 140 mJ 120 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 EAS 110 100 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 °C 160 380 370 360 -60 -20 20 60 100 °C 160 Tj Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Semiconductor Group 8 Sep-12-1996 BSP 298 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996