SPU28N03L

SPD28N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.018 Ω • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPD28N03L SPU28N03L Package P-TO252 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4139-A2 Tape and Reel P-TO251-3-1 Q67040-S4142-A2 Tube Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 28 112 145 7.5 6 kV/µs mJ Unit A ID TC = 25 °C, 1) TC = 100 °C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 75 -55... +175 55/175/56 V W °C TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1 Semiconductor Group SPD28N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 2 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 10 100 100 nA Ω 0.023 0.013 0.028 0.018 V Unit V(BR)DSS VGS(th) I DSS 30 1.2 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 50 µA Zero gate voltage drain current VDS = 30 V, VGS = 0 V, T j = 25 °C VDS = 30 V, VGS = 0 V, T j = 150 °C Gate-source leakage current I GSS RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, ID = 28 VGS = 10 V, ID = 28 A 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 SPD28N03L Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 30 970 390 170 13 max. 1220 500 215 20 ns S pF Unit g fs Ciss Coss Crss t d(on) 10 - VDS≥2*ID*RDS(on)max , ID = 28 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω Rise time tr - 33 50 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω Turn-off delay time t d(off) - 12 18 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω Fall time tf - 22 33 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω Semiconductor Group 3 SPD28N03L Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 3 13 32 3.9 max. 4.5 20 48 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 24 V, ID = 30 A Gate to drain charge VDD = 24 V, ID = 30 A Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 30 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.1 32 0.024 30 112 1.7 50 A TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage V ns VGS = 0 V, I F = 56 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge 0.036 µC VR = 15 V, IF=l S , diF/dt = 100 A/µs Semiconductor Group 4 SPD28N03L Power Dissipation Drain current Ptot = f (TC) SPD28N03L ID = f (TC ) parameter: VGS ≥ 10 V SPD28N03L 80 W 32 A 60 24 Ptot 40 ID 100 120 140 160 °C 190 50 20 16 30 12 20 8 10 4 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 °C 10 3 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD28N03L SPD28N03L K/W A 10 0 tp = 28.0 µs Z thJC 100 µs 10 2 ID = V DS /I 10 -1 D DS ( D = 0.50 10 1 ms -2 R on ) 0.20 0.10 0.05 10 1 10 ms 10 -3 single pulse 0.02 0.01 DC 10 0 -1 10 10 -4 -7 10 10 0 10 1 V 10 2 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Semiconductor Group 5 tp SPD28N03L Typ. output characteristics I D = f (VDS) parameter: tp = 80 µs SPD28N03L Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD28N03L 75 A Ptot = 75W 0.10 Ω l kji hg f VGS [V] a 2.5 b c 3.0 c d e 60 55 50 e 0.08 RDS(on) 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 d e f g 0.07 0.06 0.05 0.04 0.03 f ID 45 40 35 d h i j k 30 25 20 15 c l 0.02 10 5 a b 0.01 V VGS [V] = c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 6.5 j 7.0 k l 8.0 10.0 g h j ik l 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 VDS 0.00 0 10 20 30 40 A 55 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on)max 70 Typ. forward transconductance gfs = f(ID ); Tj = 25°C parameter: gfs 30 A S 50 20 40 gfs 15 10 5 V ID 30 20 10 0 1 2 3 5 0 0 5 10 15 20 25 A 35 VGS Semiconductor Group 6 ID SPD28N03L Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 28 , VGS = 4.5 V SPD28N03L VGS(th) = f (Tj) parameter : VGS = V DS, ID = 50 µA 3.0 V 0.070 Ω 0.060 0.055 2.4 RDS(on) 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 140 °C VGS(th) 98% typ 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 -20 20 60 100 140 °C min typ max 200 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 SPD28N03L A pF 10 2 C 10 3 Ciss IF Coss 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 0 0.0 Crss 10 2 0 4 8 12 16 20 24 28 V 36 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS Semiconductor Group 7 VSD SPD28N03L Avalanche Energy EAS = f (Tj) parameter: ID = 30 A, V DD = 25 V RGS = 25 Ω 150 Typ. gate charge VGS = f (QGate ) parameter: ID puls = 30 A SPD28N03L 16 V mJ 12 VGS EAS 100 10 75 8 0,2 VDS max 6 0,8 VDS max 50 4 25 2 0 20 40 60 80 100 120 140 °C 180 0 0 5 10 15 20 25 30 35 40 Tj nC 50 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD28N03L 37 V 35 V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Semiconductor Group 8 SPD28N03L Edition 03 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 9 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.