SE2529L

SE2529L RangeCharger™ 2.4GHz Power Amplifier Applications DSSS 2.4GHz WLAN (IEEE 802.11b) OFDM 2.4GHz WLAN (IEEE 802.11g) Access Points, PCMCIA, PC cards 2.4GHz cordless telephones Product Description The SE2529L is a 2.4GHz, Silicon Germanium power amplifier designed for use in the 2.4GHz ISM band for wireless LAN and cordless telephone applications. For wireless LAN applications, the device meets the system requirements of IEEE802.11g and delivers approximately +19dBm, at an EVM of 2.5%, while achieving an adjacent channel power of better than – 26dBc @ 11MHz offset. The SE2529L meets this performance and output power while adhering to the FCC 15.209 restricted band requirements. For IEEE802.11b, the SE2529L delivers approximately +23dBm @ ACPR = -32dBc. The SE2529L typically achieves harmonic performance of -65dBc with the recommended discrete integrated output match and low pass filter, thus not requiring an expensive and larger band pass filter. Features Delivers industry leading output power: +19dBm, 802.11g, 54 Mbps, EVM = 2.5% +23dBm, 802.11b, ACPR < -32dBc +25dBm CW P1dB at 3.3V Superior harmonic performance, No band pass filter required allowing for a lower BOM 31dB Gain Exceptional temperature stability Small plastic package, 12 pin QFN Ordering Information Type SE2529L SE2529L-R SE2529L-EK1 Package 12 - 4x4mm QFN 12 - 4x4mm QFN Remark Samples Tape and Reel Evaluation Kit Functional Block Diagram V0 Vb 1 Vb 2 Vb 3 Current Mirror Current Mirror Current Mirror IN Stage 1 I/S Match Stage 2 I/S Match Stage 3 OUT/VCC3 VCC1 V CC2 Figure 1: SE2529L Functional Block Diagram 63-DST-01 Rev 2.0 Nov 9/03 1 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Pin Out Diagram SE2529L Top View GND VCC1 VCC2 SE2529L Bottom View GND 12 1 2 Die Pad VCC2 10 9 8 7 GND OUT/VCC3 GND GND OUT/VCC3 GND 9 8 7 6 12 11 10 GND IN Vb1 1 2 3 4 5 6 11 VCC1 GND IN Vb1 3 5 Vb2 Vb2 Vb3 VCC0 Vb3 Figure 2: SE2529L Pin-Out Diagram Pin Out Description Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Die Pad Name GND IN Vb1 VCC0 Vb2 Vb3 GND OUT/ VCC3 GND VCC2 VCC1 GND GND 1 1 1 Note Ground Power amplifier RF input Stage 1 bias Bias supply voltage Stage 2 bias Stage 3 bias Ground PA output and Stage 3 collector supply voltage; external output matching network with DC feed required. Ground Stage 2 collector supply Stage 1 collector supply Ground Exposed die pad; electrical and thermal ground Description Notes: (1) Pin for injecting bias current – refer to SiGe Semiconductor’s applications support for optimum values for particular applications. 63-DST-01 Rev 2.0 Nov 9/03 VCC0 4 2 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Equivalent Circuit Diagram V CC1 V CC2 OUT/V CC3 IN VCC 0 b ias Die Pad / Gnd Vb 1 Vb 2 Vb 3 Figure 3: SE2529L Equivalent Circuit Diagram Evaluation Board Equivalent Circuit Diagram IN I /P Match SE2529L O /P Match OUT/VCC3 Vb b VCC Figure 4: SE2529L Evaluation Board Block Diagram 63-DST-01 Rev 2.0 Nov 9/03 3 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Absolute Maximum Ratings These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. Symbol VCC Vbb IN TA TSTG Tj Definition Supply Voltage on VCC0, VCC1, VCC2 and OUT/VCC3 Bias Voltage (Vb1, Vb2, Vb3) RF Input Power Operating Temperature Range Storage Temperature Range Maximum Junction Temperature -40 -40 Min. -0.3 -0.3 Max. +3.6 +3.6 +8 +85 +150 +150 Unit V V dBm °C °C °C Recommended Operating Conditions Symbol VCC TA Parameter Supply Voltage (VCC0, VCC1, VCC2, OUT/VCC3) Ambient Temperature Min. 3.0 -40 Max. 3.6 85 Unit V °C DC Electrical Characteristics 802.11g DC Electrical Characteristics Conditions: VCC = 3.3V, Vbb = 2.9V TA = 25°C, as measured on SiGe Semiconductors SE2529L-EV1 evaluation board, unless otherwise noted. “802.11g” mode, circuit tuning/biasing optimized for “g” full rate signal. Symbol ICC ∆IccTEMP Parameter Supply Current (POUT = 19 dBm, 54 Mbps OFDM signal, 64QAM) Supply Current variation over temperature from TA = 25°C (-40°C < TA < +85°C) Note 1 1 Min. 175 Typ. 200 ±10 Max. 225 Unit mA % Notes: (1) ICC refers to the total current into VCC0, VCC1, VCC2 and OUT/Vcc3 802.11b DC Electrical Characteristics Conditions: VCC = 3.3V, Vbb = 2.9V, TA = 25°C, as measured on SiGe Semiconductors SE2529L-EV1 evaluation board, unless otherwise noted. “802.11b” mode, circuit tuning/biasing optimized for “g” full rate signal. Symbol ICC ∆IccTEMP Parameter Supply Current (POUT = 23dBm, 11Mbps CCK signal) Supply Current variation over temperature from TA = 25°C (-40°C < TA < +85°C) Note 1 1 Min. 240 Typ. 280 ±10 Max. 305 Unit mA % Notes: (1) ICC refers to the total current into VCC0, VCC1, VCC2 and OUT/Vcc3 63-DST-01 Rev 2.0 Nov 9/03 4 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier AC Electrical Characteristics 802.11G AC Electrical Characteristics Conditions: VCC = 3.3V, Vbb = 2.9V, TA = 25°C, f = 2.45GHz, with RF tuning optimized for 802.11g mode operation. Symbol fL-U P1dB S21 ∆S21 2f,3f,4f,5f S21OFF Parameter Frequency Range 1dB Compressed CW Output Power Small Signal Gain (with output match and harmonic filter included) Gain Variation over band (2400-2485 MHz) Harmonics Forward Gain when PA is off, PIN ≤ 2dBm Adjacent Channel Power Ratio (@ 19 dBm) @ ±11MHz offsets from carrier @ ±20MHz offsets from carrier @ ±30MHz offsets from carrier Error Vector Magnitude (@ 19dBm) Restricted band spectral power (@ 19dBm) Stability (PIN ≤ 2dBm, Load VSWR = 6:1) Tolerance to output load mismatching 2 3 1 Note Min. 2400 23.5 28 25 31 1.0 -65 -35 Typ. Max. 2500 28 37 2.0 -55 -30 Unit MHz dBm dB dB dBc dB ACPR 4 -30 -42 -52 2.5 -43 dBc EVM P/1MHz STAB VSWR 5 6 % dBm/Mhz All non-harmonically related outputs less than -50 dBc/100kHz 10:1 (No damage) Notes: (1) (2) (3) (4) Matching networks optimized for 802.11g mode operation. With 802.11g OFDM signal at +19dBm output power. Device in standby mode by applying Vb1, Vb2 and Vb3 < 1 V. ACPR offsets are measured at stated offsets from center of channel. Measured with spectrum analyzer settings of 100kHz (RBW) and 30kHz (VBW). (5) EVM measured on Agilent 89611A PSA/VSA analysis system. (6) FCC restricted bands exist at 2310-2390 MHz and 2483.5-2500 MHz. 63-DST-01 Rev 2.0 Nov 9/03 5 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier 802.11b Electrical Characteristics Conditions: VCC = 3.3V, Vbb = 2.9V, TA = 25°C, f = 2.45GHz, 802.11 mode b operation, measured on SiGe Semiconductors SE2529L-EV1 evaluation board Symbol fL-U P1dB S21 ∆S21 2f,3f,4f,5f S21OFF Parameter Frequency Range 1dB Compressed CW Output Power Small Signal Gain Gain Variation over band (2400-2485 MHz) Harmonics Forward Gain when PA is off, PIN ≤ 2dBm Adjacent Channel Power Ratio (@ 23dBm) @ ±11MHz offsets from carrier @ ±22MHz offsets from carrier Stability (PIN ≤ 2dBm, Load VSWR = 6:1) Tolerance to output load mismatching 1 2 Note Min. 2400 23.5 28 25 31 1.0 -65 -35 Typ. Max. 2500 28 37 2.0 -55 -30 Unit MHz dBm dB dB dBc dB ACPR STAB VSWR 3 -35 -52 -30 -50 dBc All non-harmonically related outputs less than -50 dBc/100kHz 10:1 (No damage) Notes: (1) With 802.11b CCK signal at +23dBm output power. (2) Device in standby mode by applying Vb1, Vb2 and Vb3 < 1.0 V. st nd (3) ACPR offsets are measured at ±1 side lobes and ±2 side lobes from center carrier. Measured with spectrum analyzer settings of 100kHz (RBW) and 30kHz (VBW). 63-DST-01 Rev 2.0 Nov 9/03 6 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Typical Performance Characteristics The graphs below represent the performance of the SE2529L on the SE2529L-EV1 evaluation board that is matched for optimal full-rate 54Mbps, 802.11g EVM performance. Vbb set point (2.9V) is also chosen for optimum 802.11g mode performance levels. CW Input Power Sweep Pout [dBm] 30 25 20 Icc [mA] 475 Harmonics vs Output Power 2H 3H 4H 5H -50 -55 Harmonics (dBc) -60 -65 -70 -75 -80 16 18 20 Output Power (dBm) 22 24 400 Pout (dBm) 15 250 10 5 0 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 175 100 Input Power (dBm) ICC (mA) 325 802.11G EVM (%) vs. Output Power 3.0 V 3.3 V 3.6 V -20 -25 -30 802.11G ACPR vs. Output Power ACPR-g11 ACPR-g20 ACPR-g30 7 6 5 ACPR (dBc) EVM (%) -35 -40 -45 -50 -55 -60 4 3 2 1 0 14 15 16 17 18 19 20 21 22 12 13 14 15 16 17 18 19 20 Output Power (dBm) Output Power (dBm) 802.11B ACPR-CH1 vs. Output Power 3.0 V -26 -28 802.11B ACPR-CH2 vs. Output Power 3.0 V -35 3.3 V 3.6 V 3.3 V 3.6 V -40 ACPR (dBc) -32 -34 -36 -38 -40 19 20 21 22 23 24 25 26 ACPR (dBc) -30 -45 -50 -55 -60 -65 19 20 21 22 23 24 25 26 Output Power (dBm) Output Power (dBm) 63-DST-01 Rev 2.0 Nov 9/03 7 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Package Information Figure 5: SE2529L Package Information 63-DST-01 Rev 2.0 Nov 9/03 8 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier Tape and Reel Information Figure 6: SE2529L Tape and Reel Information Branding Information Part Number ("SE" prefix removed) SiGe 2529L XXXXX Figure 7: Branding Information Company Name Lot Number 63-DST-01 Rev 2.0 Nov 9/03 9 of 10 SE2529L RangeCharger™ 2.4GHz Power Amplifier http://www.sige.com Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada sales@sige.com San Diego Phone: +1 858 668 3541 Fax: +1 858 668 3546 Hong Kong Phone: +852 2491 8637 Fax: +852 2491 8937 United Kingdom South Building, Walden Court Parsonage Lane, Bishop’s Stortford Hertfordshire CM23 5DB Phone: +44 1279 464 200 Fax: +44 1279 464 201 Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Final The datasheet contains information from the final product specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. RangeCharger , StreamCharger , PointCharger , and LightCharger Copyright 2003 SiGe Semiconductor All Rights Reserved TM TM TM TM are trademarks owned by SiGe Semiconductor Inc. 63-DST-01 Rev 2.0 Nov 9/03 10 of 10