S-80840CLNB-B6ZT2G

Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS output, are available. Super-low current consumption and miniature package lineup can meet demand from the portable device applications. Features • Super-low current consumption • • • • • • 1.3 µA typ. (detection voltage≤1.4 V, at VDD=1.5 V) 0.8 µA typ. (detection voltage≥1.5 V, at VDD=3.5 V) High-precision detection voltage ±2.0% Operating voltage range 0.65 V to 5.0 V (detection voltage≤1.4 V) 0.95 V to 10.0 V (detection voltage≥1.5 V) Hysteresis characteristics 5% typ. Detection voltage 0.8 V to 6.0 V (0.1 V step) Output form Nch open-drain output (Active Low) CMOS output (Active Low) Lead-free products Applications • Battery checkers • Power failure detectors • Power monitor for portable equipments such as pagers, calculators, electronic notebooks and remote controllers. • Constant voltage power monitor for cameras, video equipments and communication devices. • Power monitor for microcomputers and reset for CPUs. Packages Package name SC-82AB SOT-23-5 SOT-89-3 SNT-4A TO-92 (Bulk) TO-92 (Tape and reel) TO-92 (Tape and ammo) Package NP004-A MP005-A UP003-A PF004-A YS003-B YF003-A YF003-A Tape NP004-A MP005-A UP003-A PF004-A  YF003-A YZ003-C Drawing code Reel NP004-A MP005-A UP003-A PF004-A  YF003-A  Zigzag       YZ003-C Land    PF004-A    Seiko Instruments Inc. 1 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Block Diagrams 1. Nch Open-drain Output Products VDD − *1 Rev.4.3_00 + *1 OUT VREF VSS *1. Parasitic diode Figure 1 2. CMOS Output Products VDD *1 − *1 OUT *1 + VREF VSS *1. Parasitic diode Figure 2 2 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Product Name Structure The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request. Refer to the "1. Product Name" for the construction of the product name and "2. Product Name List" for the full product names. 1. Product Name 1-1. SC-82AB, SOT-23-5, SOT-89-3, SNT-4A packages S - 808xx C x xx - xxx xx G IC direction in tape specifications*1 T2: SC-82AB, SOT-23-5, SOT-89-3 TF: SNT-4A Product code*2 Package code NB: SC-82AB MC: SOT-23-5 UA: SOT-89-3 PF: SNT-4A Output form N: Nch open-drain output (Active Low) L: CMOS output (Active Low) Detection voltage value 08 to 60 (e.g. When the detection voltage is 0.8 V, it is expressed as 08.) *1. Refer to the taping specifications at the end of this book. *2. Refer to the Table 1 and 3 in the “2. Product Name List” 1-2. TO-92 package S - 808xx C xY-x-G Packing form B: Bulk T: Tape and reel Z: Tape and ammo Package code Y: TO-92 Output form N: Nch open-drain output (Active Low) L: CMOS output (Active Low) Detection voltage value 15 to 60 (e.g. When the detection voltage is 1.5 V, it is expressed as 15.) Seiko Instruments Inc. 3 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 2. Product Name List 2-1. Nch Open-drain Output Products Table 1 (1/2) Detection voltage range 0.8 V±2.0 % 0.9 V±2.0 % 1.0 V±2.0 % 1.1 V±2.0 % 1.2 V±2.0 % 1.3 V±2.0 % 1.4 V±2.0 % 1.5 V±2.0 % 1.6 V±2.0 % 1.7 V±2.0 % 1.8 V±2.0 % 1.9 V±2.0 % 2.0 V±2.0 % 2.1 V±2.0 % 2.2 V±2.0 % 2.3 V±2.0 % 2.4 V±2.0 % 2.4 V typ. 2.5 V±2.0 % 2.6 V±2.0 % 2.7 V±2.0 % 2.8 V±2.0 % 2.9 V±2.0 % 3.0 V±2.0 % 3.1 V±2.0 % 3.2 V±2.0 % 3.3 V±2.0 % 3.4 V±2.0 % 3.5 V±2.0 % 3.6 V±2.0 % 3.7 V±2.0 % 3.8 V±2.0 % 3.9 V±2.0 % Hysteresis width (Typ.) 0.034 V 0.044 V 0.054 V 0.064 V 0.073 V 0.083 V 0.093 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 4.4 ± 0.1 V*1 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V 0.195 V SC-82AB S-80808CNNB-B9MT2G S-80809CNNB-B9NT2G S-80810CNNB-B9OT2G S-80811CNNB-B9PT2G S-80812CNNB-B9QT2G S-80813CNNB-B9RT2G S-80814CNNB-B9ST2G S-80815CNNB-B8AT2G S-80816CNNB-B8BT2G S-80817CNNB-B8CT2G S-80818CNNB-B8DT2G S-80819CNNB-B8ET2G S-80820CNNB-B8FT2G S-80821CNNB-B8GT2G S-80822CNNB-B8HT2G S-80823CNNB-B8IT2G S-80824CNNB-B8JT2G  S-80825CNNB-B8KT2G S-80826CNNB-B8LT2G S-80827CNNB-B8MT2G S-80828CNNB-B8NT2G S-80829CNNB-B8OT2G S-80830CNNB-B8PT2G S-80831CNNB-B8QT2G S-80832CNNB-B8RT2G S-80833CNNB-B8ST2G S-80834CNNB-B8TT2G S-80835CNNB-B8UT2G S-80836CNNB-B8VT2G S-80837CNNB-B8WT2G S-80838CNNB-B8XT2G S-80839CNNB-B8YT2G SOT-23-5        S-80815CNMC-B8AT2G S-80816CNMC-B8BT2G S-80817CNMC-B8CT2G S-80818CNMC-B8DT2G S-80819CNMC-B8ET2G S-80820CNMC-B8FT2G S-80821CNMC-B8GT2G S-80822CNMC-B8HT2G S-80823CNMC-B8IT2G S-80824CNMC-B8JT2G  S-80825CNMC-B8KT2G S-80826CNMC-B8LT2G S-80827CNMC-B8MT2G S-80828CNMC-B8NT2G S-80829CNMC-B8OT2G S-80830CNMC-B8PT2G S-80831CNMC-B8QT2G S-80832CNMC-B8RT2G S-80833CNMC-B8ST2G S-80834CNMC-B8TT2G S-80835CNMC-B8UT2G S-80836CNMC-B8VT2G S-80837CNMC-B8WT2G S-80838CNMC-B8XT2G S-80839CNMC-B8YT2G Rev.4.3_00 SOT-89-3        S-80815CNUA-B8AT2G S-80816CNUA-B8BT2G S-80817CNUA-B8CT2G S-80818CNUA-B8DT2G S-80819CNUA-B8ET2G S-80820CNUA-B8FT2G S-80821CNUA-B8GT2G S-80822CNUA-B8HT2G S-80823CNUA-B8IT2G S-80824CNUA-B8JT2G S-80824KNUA-D2BT2G*2 S-80825CNUA-B8KT2G S-80826CNUA-B8LT2G S-80827CNUA-B8MT2G S-80828CNUA-B8NT2G S-80829CNUA-B8OT2G S-80830CNUA-B8PT2G S-80831CNUA-B8QT2G S-80832CNUA-B8RT2G S-80833CNUA-B8ST2G S-80834CNUA-B8TT2G S-80835CNUA-B8UT2G S-80836CNUA-B8VT2G S-80837CNUA-B8WT2G S-80838CNUA-B8XT2G S-80839CNUA-B8YT2G 4 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Table 1 (2/2) Detection Hysteresis width SC-82AB SOT-23-5 SOT-89-3 voltage range (Typ.) 0.200 V S-80840CNNB-B8ZT2G S-80840CNMC-B8ZT2G S-80840CNUA-B8ZT2G 4.0 V±2.0 % 0.205 V S-80841CNNB-B82T2G S-80841CNMC-B82T2G S-80841CNUA-B82T2G 4.1 V±2.0 % 0.210 V S-80842CNNB-B83T2G S-80842CNMC-B83T2G S-80842CNUA-B83T2G 4.2 V±2.0 % 0.215 V S-80843CNNB-B84T2G S-80843CNMC-B84T2G S-80843CNUA-B84T2G 4.3 V±2.0 % 0.220 V S-80844CNNB-B85T2G S-80844CNMC-B85T2G S-80844CNUA-B85T2G 4.4 V±2.0 % 0.225 V S-80845CNNB-B86T2G S-80845CNMC-B86T2G S-80845CNUA-B86T2G 4.5 V±2.0 % 0.230 V S-80846CNNB-B87T2G S-80846CNMC-B87T2G S-80846CNUA-B87T2G 4.6 V±2.0 % 0.10 V max. S-80846KNUA-D2CT2G*3 4.6 V± 0.10 V   0.235 V S-80847CNNB-B88T2G S-80847CNMC-B88T2G S-80847CNUA-B88T2G 4.7 V±2.0 % 0.240 V S-80848CNNB-B89T2G S-80848CNMC-B89T2G S-80848CNUA-B89T2G 4.8 V±2.0 % 0.245 V S-80849CNNB-B9AT2G S-80849CNMC-B9AT2G S-80849CNUA-B9AT2G 4.9 V±2.0 % 0.250 V S-80850CNNB-B9BT2G S-80850CNMC-B9BT2G S-80850CNUA-B9BT2G 5.0 V±2.0 % 0.255 V S-80851CNNB-B9CT2G S-80851CNMC-B9CT2G S-80851CNUA-B9CT2G 5.1 V±2.0 % 0.260 V S-80852CNNB-B9DT2G S-80852CNMC-B9DT2G S-80852CNUA-B9DT2G 5.2 V±2.0 % 0.265 V S-80853CNNB-B9ET2G S-80853CNMC-B9ET2G S-80853CNUA-B9ET2G 5.3 V±2.0 % 0.270 V S-80854CNNB-B9FT2G S-80854CNMC-B9FT2G S-80854CNUA-B9FT2G 5.4 V±2.0 % 0.275 V S-80855CNNB-B9GT2G S-80855CNMC-B9GT2G S-80855CNUA-B9GT2G 5.5 V±2.0 % 0.280 V S-80856CNNB-B9HT2G S-80856CNMC-B9HT2G S-80856CNUA-B9HT2G 5.6 V±2.0 % 0.285 V S-80857CNNB-B9IT2G S-80857CNMC-B9IT2G S-80857CNUA-B9IT2G 5.7 V±2.0 % 0.290 V S-80858CNNB-B9JT2G S-80858CNMC-B9JT2G S-80858CNUA-B9JT2G 5.8 V±2.0 % 0.295 V S-80859CNNB-B9KT2G S-80859CNMC-B9KT2G S-80859CNUA-B9KT2G 5.9 V±2.0 % 0.300 V S-80860CNNB-B9LT2G S-80860CNMC-B9LT2G S-80860CNUA-B9LT2G 6.0 V±2.0 % *1. Describes the release voltage. *2. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics. *3. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics Seiko Instruments Inc. 5 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Table 2 (1/2) Detection voltage range 0.8 V±2.0 % 0.9 V±2.0 % 1.0 V±2.0 % 1.1 V±2.0 % 1.2 V±2.0 % 1.3 V±2.0 % 1.4 V±2.0 % 1.5 V±2.0 % 1.6 V±2.0 % 1.7 V±2.0 % 1.8 V±2.0 % 1.9 V±2.0 % 2.0 V±2.0 % 2.1 V±2.0 % 2.2 V±2.0 % 2.3 V±2.0 % 2.4 V±2.0 % 2.4 V typ. 2.5 V±2.0 % 2.6 V±2.0 % 2.7 V±2.0 % 2.8 V±2.0 % 2.9 V±2.0 % 3.0 V±2.0 % 3.1 V±2.0 % 3.2 V±2.0 % 3.3 V±2.0 % 3.4 V±2.0 % 3.5 V±2.0 % 3.6 V±2.0 % 3.7 V±2.0 % 3.8 V±2.0 % 3.9 V±2.0 % 4.0 V±2.0 % 4.1 V±2.0 % 4.2 V±2.0 % 4.3 V±2.0 % 4.4 V±2.0 % 4.5 V±2.0 % 4.6 V±2.0 % 4.6 V±0.10 V 4.7 V±2.0 % 4.8 V±2.0 % 4.9 V±2.0 % 5.0 V±2.0 % 5.1 V±2.0 % Hysteresis width (Typ.) 0.034 V 0.044 V 0.054 V 0.064 V 0.073 V 0.083 V 0.093 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 4.4 ± 0.1 V*2 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V 0.195 V 0.200 V 0.205 V 0.210 V 0.215 V 0.220 V 0.225 V 0.230 V 0.10 V max. 0.235 V 0.240 V 0.245 V 0.250 V 0.255 V SNT-4A S-80808CNPF-B9MTFG S-80809CNPF-B9NTFG S-80810CNPF-B9OTFG S-80811CNPF-B9PTFG S-80812CNPF-B9QTFG S-80813CNPF-B9RTFG S-80814CNPF-B9STFG S-80815CNPF-B8ATFG S-80816CNPF-B8BTFG S-80817CNPF-B8CTFG S-80818CNPF-B8DTFG S-80819CNPF-B8ETFG S-80820CNPF-B8FTFG S-80821CNPF-B8GTFG S-80822CNPF-B8HTFG S-80823CNPF-B8ITFG S-80824CNPF-B8JTFG  S-80825CNPF-B8KTFG S-80826CNPF-B8LTFG S-80827CNPF-B8MTFG S-80828CNPF-B8NTFG S-80829CNPF-B8OTFG S-80830CNPF-B8PTFG S-80831CNPF-B8QTFG S-80832CNPF-B8RTFG S-80833CNPF-B8STFG S-80834CNPF-B8TTFG S-80835CNPF-B8UTFG S-80836CNPF-B8VTFG S-80837CNPF-B8WTFG S-80838CNPF-B8XTFG S-80839CNPF-B8YTFG S-80840CNPF-B8ZTFG S-80841CNPF-B82TFG S-80842CNPF-B83TFG S-80843CNPF-B84TFG S-80844CNPF-B85TFG S-80845CNPF-B86TFG S-80846CNPF-B87TFG  S-80847CNPF-B88TFG S-80848CNPF-B89TFG S-80849CNPF-B9ATFG S-80850CNPF-B9BTFG S-80851CNPF-B9CTFG TO-92*1        S-80815CNY-x-G S-80816CNY-x-G S-80817CNY-x-G S-80818CNY-x-G S-80819CNY-x-G S-80820CNY-x-G S-80821CNY-x-G S-80822CNY-x-G S-80823CNY-x-G S-80824CNY-x-G S-80824KNY-x-G *3 S-80825CNY-x-G S-80826CNY-x-G S-80827CNY-x-G S-80828CNY-x-G S-80829CNY-x-G S-80830CNY-x-G S-80831CNY-x-G S-80832CNY-x-G S-80833CNY-x-G S-80834CNY-x-G S-80835CNY-x-G S-80836CNY-x-G S-80837CNY-x-G S-80838CNY-x-G S-80839CNY-x-G S-80840CNY-x-G S-80841CNY-x-G S-80842CNY-x-G S-80843CNY-x-G S-80844CNY-x-G S-80845CNY-x-G S-80846CNY-x-G S-80846KNY-x-G *4 S-80847CNY-x-G S-80848CNY-x-G S-80849CNY-x-G S-80850CNY-x-G S-80851CNY-x-G Rev.4.3_00 6 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Table 2 (2/2) Detection Hysteresis width SNT-4A TO-92*1 voltage range (Typ.) 0.260 V S-80852CNPF-B9DTFG S-80852CNY-x-G 5.2 V±2.0 % 0.265 V S-80853CNPF-B9ETFG S-80853CNY-x-G 5.3 V±2.0 % 0.270 V S-80854CNPF-B9FTFG S-80854CNY-x-G 5.4 V±2.0 % 0.275 V S-80855CNPF-B9GTFG S-80855CNY-x-G 5.5 V±2.0 % 0.280 V S-80856CNPF-B9HTFG S-80856CNY-x-G 5.6 V±2.0 % 0.285 V S-80857CNPF-B9ITFG S-80857CNY-x-G 5.7 V±2.0 % 0.290 V S-80858CNPF-B9JTFG S-80858CNY-x-G 5.8 V±2.0 % 0.295 V S-80859CNPF-B9KTFG S-80859CNY-x-G 5.9 V±2.0 % 0.300 V S-80860CNPF-B9LTFG S-80860CNY-x-G 6.0 V±2.0 % *1. x changes according to the packing form in TO-92. B: Bulk, T: Tape and reel, Z: Tape and ammo *2. Describes the release voltage. *3. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics. *4. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics Seiko Instruments Inc. 7 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 2-2. CMOS Output Products Table 3 (1/2) Detection voltage range 0.8 V±2.0 % 0.9 V±2.0 % 1.0 V±2.0 % 1.1 V±2.0 % 1.2 V±2.0 % 1.3 V±2.0 % 1.4 V±2.0 % 1.5 V±2.0 % 1.6 V±2.0 % 1.7 V±2.0 % 1.8 V±2.0 % 1.9 V±2.0 % 2.0 V±2.0 % 2.1 V±2.0 % 2.2 V±2.0 % 2.3 V±2.0 % 2.4 V±2.0 % 2.5 V±2.0 % 2.6 V±2.0 % 2.7 V±2.0 % 2.8 V±2.0 % 2.9 V±2.0 % 3.0 V±2.0 % 3.1 V±2.0 % 3.2 V±2.0 % 3.3 V±2.0 % 3.4 V±2.0 % 3.5 V±2.0 % 3.6 V±2.0 % 3.7 V±2.0 % 3.8 V±2.0 % 3.9 V±2.0 % 4.0 V±2.0 % 4.1 V±2.0 % 4.2 V±2.0 % 4.3 V±2.0 % 4.4 V±2.0 % 4.45 V typ. 4.5 V±2.0 % 4.6 V±2.0 % 4.7 V±2.0 % 4.8 V±2.0 % 4.9 V±2.0 % 5.0 V±2.0 % 5.1 V±2.0 % Hysteresis width (Typ.) 0.034 V 0.044 V 0.054 V 0.064 V 0.073 V 0.083 V 0.093 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V 0.195 V 0.200 V 0.205 V 0.210 V 0.215 V 0.220 V 4.70 V max.*1 0.225 V 0.230 V 0.235 V 0.240 V 0.245 V 0.250 V 0.255 V SC-82AB S-80808CLNB-B7MT2G S-80809CLNB-B7NT2G S-80810CLNB-B7OT2G S-80811CLNB-B7PT2G S-80812CLNB-B7QT2G S-80813CLNB-B7RT2G S-80814CLNB-B7ST2G S-80815CLNB-B6AT2G S-80816CLNB-B6BT2G S-80817CLNB-B6CT2G S-80818CLNB-B6DT2G S-80819CLNB-B6ET2G S-80820CLNB-B6FT2G S-80821CLNB-B6GT2G S-80822CLNB-B6HT2G S-80823CLNB-B6IT2G S-80824CLNB-B6JT2G S-80825CLNB-B6KT2G S-80826CLNB-B6LT2G S-80827CLNB-B6MT2G S-80828CLNB-B6NT2G S-80829CLNB-B6OT2G S-80830CLNB-B6PT2G S-80831CLNB-B6QT2G S-80832CLNB-B6RT2G S-80833CLNB-B6ST2G S-80834CLNB-B6TT2G S-80835CLNB-B6UT2G S-80836CLNB-B6VT2G S-80837CLNB-B6WT2G S-80838CLNB-B6XT2G S-80839CLNB-B6YT2G S-80840CLNB-B6ZT2G S-80841CLNB-B62T2G S-80842CLNB-B63T2G S-80843CLNB-B64T2G S-80844CLNB-B65T2G  S-80845CLNB-B66T2G S-80846CLNB-B67T2G S-80847CLNB-B68T2G S-80848CLNB-B69T2G S-80849CLNB-B7AT2G S-80850CLNB-B7BT2G S-80851CLNB-B7CT2G SOT-23-5        S-80815CLMC-B6AT2G S-80816CLMC-B6BT2G S-80817CLMC-B6CT2G S-80818CLMC-B6DT2G S-80819CLMC-B6ET2G S-80820CLMC-B6FT2G S-80821CLMC-B6GT2G S-80822CLMC-B6HT2G S-80823CLMC-B6IT2G S-80824CLMC-B6JT2G S-80825CLMC-B6KT2G S-80826CLMC-B6LT2G S-80827CLMC-B6MT2G S-80828CLMC-B6NT2G S-80829CLMC-B6OT2G S-80830CLMC-B6PT2G S-80831CLMC-B6QT2G S-80832CLMC-B6RT2G S-80833CLMC-B6ST2G S-80834CLMC-B6TT2G S-80835CLMC-B6UT2G S-80836CLMC-B6VT2G S-80837CLMC-B6WT2G S-80838CLMC-B6XT2G S-80839CLMC-B6YT2G S-80840CLMC-B6ZT2G S-80841CLMC-B62T2G S-80842CLMC-B63T2G S-80843CLMC-B64T2G S-80844CLMC-B65T2G  S-80845CLMC-B66T2G S-80846CLMC-B67T2G S-80847CLMC-B68T2G S-80848CLMC-B69T2G S-80849CLMC-B7AT2G S-80850CLMC-B7BT2G S-80851CLMC-B7CT2G Rev.4.3_00 SOT-89-3        S-80815CLUA-B6AT2G S-80816CLUA-B6BT2G S-80817CLUA-B6CT2G S-80818CLUA-B6DT2G S-80819CLUA-B6ET2G S-80820CLUA-B6FT2G S-80821CLUA-B6GT2G S-80822CLUA-B6HT2G S-80823CLUA-B6IT2G S-80824CLUA-B6JT2G S-80825CLUA-B6KT2G S-80826CLUA-B6LT2G S-80827CLUA-B6MT2G S-80828CLUA-B6NT2G S-80829CLUA-B6OT2G S-80830CLUA-B6PT2G S-80831CLUA-B6QT2G S-80832CLUA-B6RT2G S-80833CLUA-B6ST2G S-80834CLUA-B6TT2G S-80835CLUA-B6UT2G S-80836CLUA-B6VT2G S-80837CLUA-B6WT2G S-80838CLUA-B6XT2G S-80839CLUA-B6YT2G S-80840CLUA-B6ZT2G S-80841CLUA-B62T2G S-80842CLUA-B63T2G S-80843CLUA-B64T2G S-80844CLUA-B65T2G S-80844KLUA-D2AT2G*2 S-80845CLUA-B66T2G S-80846CLUA-B67T2G S-80847CLUA-B68T2G S-80848CLUA-B69T2G S-80849CLUA-B7AT2G S-80850CLUA-B7BT2G S-80851CLUA-B7CT2G 8 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Table 3 (2/2) Detection Hysteresis width SC-82AB SOT-23-5 SOT-89-3 voltage range (Typ.) 0.260 V S-80852CLNB-B7DT2G S-80852CLMC-B7DT2G S-80852CLUA-B7DT2G 5.2 V±2.0 % 0.265 V S-80853CLNB-B7ET2G S-80853CLMC-B7ET2G S-80853CLUA-B7ET2G 5.3 V±2.0 % 0.270 V S-80854CLNB-B7FT2G S-80854CLMC-B7FT2G S-80854CLUA-B7FT2G 5.4 V±2.0 % 0.275 V S-80855CLNB-B7GT2G S-80855CLMC-B7GT2G S-80855CLUA-B7GT2G 5.5 V±2.0 % 0.280 V S-80856CLNB-B7HT2G S-80856CLMC-B7HT2G S-80856CLUA-B7HT2G 5.6 V±2.0 % 0.285 V S-80857CLNB-B7IT2G S-80857CLMC-B7IT2G S-80857CLUA-B7IT2G 5.7 V±2.0 % 0.290 V S-80858CLNB-B7JT2G S-80858CLMC-B7JT2G S-80858CLUA-B7JT2G 5.8 V±2.0 % 0.295 V S-80859CLNB-B7KT2G S-80859CLMC-B7KT2G S-80859CLUA-B7KT2G 5.9 V±2.0 % 0.300 V S-80860CLNB-B7LT2G S-80860CLMC-B7LT2G S-80860CLUA-B7LT2G 6.0 V±2.0 % *1. Describes the release voltage. *2. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics. Table 4 (1/2) Detection voltage range 0.8 V±2.0 % 0.9 V±2.0 % 1.0 V±2.0 % 1.1 V±2.0 % 1.2 V±2.0 % 1.3 V±2.0 % 1.4 V±2.0 % 1.5 V±2.0 % 1.6 V±2.0 % 1.7 V±2.0 % 1.8 V±2.0 % 1.9 V±2.0 % 2.0 V±2.0 % 2.1 V±2.0 % 2.2 V±2.0 % 2.3 V±2.0 % 2.4 V±2.0 % 2.5 V±2.0 % 2.6 V±2.0 % 2.7 V±2.0 % 2.8 V±2.0 % 2.9 V±2.0 % 3.0 V±2.0 % 3.1 V±2.0 % 3.2 V±2.0 % 3.3 V±2.0 % 3.4 V±2.0 % 3.5 V±2.0 % 3.6 V±2.0 % 3.7 V±2.0 % 3.8 V±2.0 % Hysteresis width (Typ.) 0.034 V 0.044 V 0.054 V 0.064 V 0.073 V 0.083 V 0.093 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V SNT-4A S-80808CLPF-B7MTFG S-80809CLPF-B7NTFG S-80810CLPF-B7OTFG S-80811CLPF-B7PTFG S-80812CLPF-B7QTFG S-80813CLPF-B7RTFG S-80814CLPF-B7STFG S-80815CLPF-B6ATFG S-80816CLPF-B6BTFG S-80817CLPF-B6CTFG S-80818CLPF-B6DTFG S-80819CLPF-B6ETFG S-80820CLPF-B6FTFG S-80821CLPF-B6GTFG S-80822CLPF-B6HTFG S-80823CLPF-B6ITFG S-80824CLPF-B6JTFG S-80825CLPF-B6KTFG S-80826CLPF-B6LTFG S-80827CLPF-B6MTFG S-80828CLPF-B6NTFG S-80829CLPF-B6OTFG S-80830CLPF-B6PTFG S-80831CLPF-B6QTFG S-80832CLPF-B6RTFG S-80833CLPF-B6STFG S-80834CLPF-B6TTFG S-80835CLPF-B6UTFG S-80836CLPF-B6VTFG S-80837CLPF-B6WTFG S-80838CLPF-B6XTFG TO-92*1        S-80815CLY-x-G S-80816CLY-x-G S-80817CLY-x-G S-80818CLY-x-G S-80819CLY-x-G S-80820CLY-x-G S-80821CLY-x-G S-80822CLY-x-G S-80823CLY-x-G S-80824CLY-x-G S-80825CLY-x-G S-80826CLY-x-G S-80827CLY-x-G S-80828CLY-x-G S-80829CLY-x-G S-80830CLY-x-G S-80831CLY-x-G S-80832CLY-x-G S-80833CLY-x-G S-80834CLY-x-G S-80835CLY-x-G S-80836CLY-x-G S-80837CLY-x-G S-80838CLY-x-G Seiko Instruments Inc. 9 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Table 4 (2/2) Rev.4.3_00 Detection Hysteresis width SNT-4A TO-92*1 voltage range (Typ.) 0.195 V S-80839CLPF-B6YTFG S-80839CLY-x-G 3.9 V±2.0 % 0.200 V S-80840CLPF-B6ZTFG S-80840CLY-x-G 4.0 V±2.0 % 0.205 V S-80841CLPF-B62TFG S-80841CLY-x-G 4.1 V±2.0 % 0.210 V S-80842CLPF-B63TFG S-80842CLY-x-G 4.2 V±2.0 % 0.215 V S-80843CLPF-B64TFG S-80843CLY-x-G 4.3 V±2.0 % 0.220 V S-80844CLPF-B65TFG S-80844CLY-x-G 4.4 V±2.0 % *2 4.45 V typ. 4.70 V max. S-80844KLY-x-G *3  0.225 V S-80845CLPF-B66TFG S-80845CLY-x-G 4.5 V±2.0 % 0.230 V S-80846CLPF-B67TFG S-80846CLY-x-G 4.6 V±2.0 % 0.235 V S-80847CLPF-B68TFG S-80847CLY-x-G 4.7 V±2.0 % 0.240 V S-80848CLPF-B69TFG S-80848CLY-x-G 4.8 V±2.0 % 0.245 V S-80849CLPF-B7ATFG S-80849CLY-x-G 4.9 V±2.0 % 0.250 V S-80850CLPF-B7BTFG S-80850CLY-x-G 5.0 V±2.0 % 0.255 V S-80851CLPF-B7CTFG S-80851CLY-x-G 5.1 V±2.0 % 0.260 V S-80852CLPF-B7DTFG S-80852CLY-x-G 5.2 V±2.0 % 0.265 V S-80853CLPF-B7ETFG S-80853CLY-x-G 5.3 V±2.0 % 0.270 V S-80854CLPF-B7FTFG S-80854CLY-x-G 5.4 V±2.0 % 0.275 V S-80855CLPF-B7GTFG S-80855CLY-x-G 5.5 V±2.0 % 0.280 V S-80856CLPF-B7HTFG S-80856CLY-x-G 5.6 V±2.0 % 0.285 V S-80857CLPF-B7ITFG S-80857CLY-x-G 5.7 V±2.0 % 0.290 V S-80858CLPF-B7JTFG S-80858CLY-x-G 5.8 V±2.0 % 0.295 V S-80859CLPF-B7KTFG S-80859CLY-x-G 5.9 V±2.0 % 0.300 V S-80860CLPF-B7LTFG S-80860CLY-x-G 6.0 V±2.0 % *1. x changes according to the packing form in TO-92. B: Bulk, T: Tape and reel, Z: Tape and ammo *2. Describes the release voltage. *3. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics. 10 Seiko Instruments Inc. Rev.4.3_00 Output Forms SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 1. Output Forms in S-808xxC Series Table 5 Nch open-drain output products (Active Low) “N” is the last letter of the product name. e.g. S-80815CN CMOS output products (Active Low) “L” is the last letter of the product name. e.g. S-80815CL S-808xxC Series 2. Output Forms and Their Usage Table 6 Nch open-drain output products CMOS output products (Active Low) (Active Low) Different power supplies Yes No Active Low reset for CPUs Yes Yes Active High reset for CPUs No No Detection voltage change by resistor divider Yes No • Example for two power supplies VDD1 VDD2 Usage • Example for one power supply VDD VDD V/D Nch VSS OUT CPU V/D CMOS OUT VSS CPU V/D Nch OUT CPU VSS Figure 3 Seiko Instruments Inc. 11 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Pin Configurations SC-82AB Top view 4 3 Rev.4.3_00 Table 7 Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 NC*1 No connection 4 VSS GND pin *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. 1 2 Figure 4 SOT-23-5 Top view 5 4 Table 8 1 2 3 Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 VSS GND pin 4 NC*1 No connection 5 NC*1 No connection *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. Figure 5 SOT-89-3 Top view Table 9 Pin No. 1 2 3 Symbol OUT VDD VSS Description Voltage detection output pin Voltage input pin GND pin 1 2 3 Figure 6 SNT-4A Top view 1 2 4 3 Table10 Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VSS GND pin 3 NC*1 No connection 4 VDD Voltage input pin *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. Figure 7 12 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Table 11 TO-92 Bottom view 123 Pin No. 1 2 3 Symbol OUT VDD VSS Description Voltage detection output pin Voltage input pin GND pin Figure 8 Seiko Instruments Inc. 13 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Absolute Maximum Ratings 1. Detection Voltage Typ. 1.4 V or Less Products Table 12 Rev.4.3_00 Item Power supply voltage Output voltage Nch open-drain output products CMOS output products Output current Power SC-82AB dissipation SNT-4A Symbol VDD−VSS VOUT IOUT PD Operating ambient temperature Topr Storage temperature Tstg *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7 (Ta = 25 °C unless otherwise specified) Absolute maximum ratings Unit 7 V V VSS−0.3 to VSS+7 V VSS−0.3 to VDD+0.3 50 mA 150 (When not mounted on board) mW 350*1 mW 140 (When not mounted on board) mW mW 300*1 −40 to +85 °C −40 to +125 °C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 500 400 300 200 SNT-4A 100 0 0 50 100 150 SC-82AB Power Dissipation PD (mW) Ambient Temperature Ta (°C) Figure 9 Power Dissipation of Package (When Mounted on Board) 14 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 2. Detection Voltage Typ. 1.5 V or More Products Table 13 Item Power supply voltage Output voltage Nch open-drain output products CMOS output products Output current Power SC-82AB dissipation SOT-23-5 SOT-89-3 SNT-4A TO-92 Symbol VDD−VSS VOUT IOUT PD Operating ambient temperature Topr Storage temperature Tstg *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7 (Ta = 25 °C unless otherwise specified) Absolute maximum ratings Unit 12 V V VSS−0.3 to VSS+12 V VSS−0.3 to VDD+0.3 50 mA 150 (When not mounted on board) mW 350*1 mW 250 (When not mounted on board) mW 600*1 mW 500 (When not mounted on board) mW 1000*1 mW 140 (When not mounted on board) mW 300*1 mW 400 (When not mounted on board) mW mW 800*1 −40 to +85 °C −40 to +125 °C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 1200 Power Dissipation PD (mW) 1000 800 600 400 200 0 0 SNT-4A 50 100 150 SOT-89-3 TO-92 SOT-23-5 SC-82AB Ambient Temperature Ta (°C) Figure 10 Power Dissipation of Package (When Mounted on Board) Seiko Instruments Inc. 15 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Electrical Characteristics 1. Nch Open-drain Output Products 1-1. Detection Voltage Typ.1.4 V or Less Products Table 14 Rev.4.3_00 Item Detection voltage*1 Release voltage Symbol −VDET +VDET Condition  Hysteresis width VHYS Current consumption Operating voltage Output current Leakage current Response time ISS VDD IOUT ILEAK tPLH S-80808 S-80809 S-80810 S-80811 S-80812 S-80813 S-80814 S-80808 S-80809 S-80810 S-80811 S-80812 S-80813 S-80814 VDD = 1.5 V VDD = 2.0 V S-80808 to 09 S-80810 to 14  Output transistor, Nch, VDS = 0.5 V, VDD = 0.7 V Output transistor, Nch, VDS = 5.0 V, VDD = 5.0 V  (Ta = 25 °C unless otherwise specified) Test Min. Typ. Max. Unit circuit −VDET(S) −VDET(S) −VDET(S) V 1 ×0.98 ×1.02 V 1 0.802 0.834 0.867 V 1 0.910 0.944 0.979 V 1 1.017 1.054 1.091 V 1 1.125 1.164 1.203 V 1 1.232 1.273 1.315 V 1 1.340 1.383 1.427 V 1 1.448 1.493 1.538 V 1 0.018 0.034 0.051 V 1 0.028 0.044 0.061 V 1 0.037 0.054 0.071 V 1 0.047 0.064 0.081 V 1 0.056 0.073 0.091 V 1 0.066 0.083 0.101 V 1 0.076 0.093 0.110 1.3 3.5 2  µA 1.3 3.5 2  µA 0.65 5.0 V 1  0.04   0.2    mA nA µs 3 3 1 60 60 Detection voltage ∆ − VDET ppm/ temperature 1 Ta = −40 to +85 °C ±100 ±350  °C *2 ∆Ta • − VDET coefficient *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 1 to 2.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient 16 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 1-2. Detection Voltage Typ.1.5 V or More Products Table 15 Item Detection voltage*1 Hysteresis width Current consumption Symbol −VDET VHYS ISS VDD = 3.5 V VDD = 4.5 V VDD = 6.0 V VDD = 7.5 V Condition   S-80815 to 26 S-80827 to 39 S-80840 to 56 S-80857 to 60  Output transistor, VDD = 1.2 V Nch, VDS = 0.5 V S-80815 to 60 VDD = 2.4 V S-80827 to 60 Output transistor, Nch, VDS = 10.0 V, VDD = 10.0 V  Operating voltage Output current VDD IOUT (Ta = 25 °C unless otherwise specified) Test Min. Typ. Max. Unit circuit −VDET(S) −VDET(S) −VDET(S) V 1 ×0.98 ×1.02 −VDET −VDET −VDET V 1 ×0.03 ×0.05 ×0.08 0.8 2.4 2  µA 2 0.8 2.4  µA 2 0.9 2.7  µA 2 0.9 2.7  µA 0.95 10.0 V 1  0.59 2.88  1.36 4.98    100 mA mA nA 3 3 3 Leakage current ILEAK Response time tPLH 60 1   µs Detection voltage ∆ − VDET ppm/ 1 temperature Ta = −40 to +85 °C ±100 ±350  °C ∆Ta • − VDET coefficient*2 *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 1 to 2.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient Seiko Instruments Inc. 17 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 2. CMOS Output Products 2-1. Detection Voltage Typ.1.4 V or Less Products Table 16 Rev.4.3_00 Item Detection voltage*1 Release voltage Symbol −VDET +VDET Hysteresis width VHYS Current consumption Operating voltage Output current ISS VDD IOUT Response time tPLH Detection voltage ∆ − VDET ppm/ 1 temperature Ta = −40 to +85 °C ±100 ±350  °C *2 ∆Ta • − VDET coefficient *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 3 to 4.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient (Ta = 25 °C unless otherwise specified) Test Condition Min. Typ. Max. Unit circuit −VDET(S) −VDET(S) −VDET(S) V 1  ×0.98 ×1.02 S-80808 0.802 0.834 0.867 V 1 S-80809 0.910 0.944 0.979 V 1 S-80810 1.017 1.054 1.091 V 1 S-80811 1.125 1.164 1.203 V 1 S-80812 1.232 1.273 1.315 V 1 S-80813 1.340 1.383 1.427 V 1 S-80814 1.448 1.493 1.538 V 1 S-80808 0.018 0.034 0.051 V 1 S-80809 0.028 0.044 0.061 V 1 S-80810 0.037 0.054 0.071 V 1 S-80811 0.047 0.064 0.081 V 1 S-80812 0.056 0.073 0.091 V 1 S-80813 0.066 0.083 0.101 V 1 S-80814 0.076 0.093 0.110 V 1 S-80808 to 09 1.3 3.5 2 VDD = 1.5 V  µA S-80810 to 14 1.3 3.5 2 VDD = 2.0 V  µA 0.65 5.0 V 1   Output transistor, 0.04 0.2 mA 3  Nch, VDS = 0.5 V, VDD = 0.7 V Output transistor, 2.9 5.8 mA 4  Pch, VDS = 2.1 V, VDD = 4.5 V 60 1    µs 18 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 2-2. Detection Voltage Typ.1.5 V or More Products Table 17 Item Detection voltage*1 Hysteresis width Current consumption Symbol −VDET VHYS ISS VDD = 3.5 V VDD = 4.5 V VDD = 6.0 V VDD = 7.5 V Condition   S-80815 to 26 S-80827 to 39 S-80840 to 56 S-80857 to 60  Output transistor, VDD = 1.2 V Nch, VDS = 0.5 V S-80815 to 60 VDD = 2.4 V S-80827 to 60 Output transistor, VDD = 4.8 V Pch, VDS = 0.5 V S-80815 to 39 VDD = 6.0 V S-80840 to 56 VDD = 8.4 V S-80857 to 60  Operating voltage Output current VDD IOUT (Ta = 25 °C unless otherwise specified) Test Min. Typ. Max. Unit circuit −VDET(S) −VDET(S) −VDET(S) V 1 ×0.98 ×1.02 −VDET −VDET −VDET V 1 ×0.03 ×0.05 ×0.08 0.8 2.4 2  µA 0.8 2.4 2  µA 0.9 2.7 2  µA 0.9 2.7 2  µA 0.95 10.0 V 1  0.59 2.88 1.43 1.68 2.08 1.36 4.98 2.39 2.78 3.42      mA mA mA mA mA 3 3 4 4 4 Response time tPLH 60 1   µs Detection voltage ∆ − VDET ppm/ 1 temperature Ta = −40 to +85 °C ±100 ±350  °C *2 ∆Ta • − VDET coefficient *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 3 to 4.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta • − VDET ∆Ta *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient Seiko Instruments Inc. 19 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Test Circuits 1. VDD VDD V S-808xxC Series V VSS OUT R 100 kΩ *1 Rev.4.3_00 *1. R is unnecessary for CMOS output products. Figure 11 2. A VDD VDD S-808xxC Series VSS OUT Figure 12 3. VDD VDD V S-808xxC Series VSS V OUT A VDS Figure 13 4. VDS VDD VDD V S-808xxC Series VSS V OUT A Figure 14 20 Seiko Instruments Inc. Rev.4.3_00 Timing Chart SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 1. Nch Open-drain Output Products VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS R 100 kΩ Hysteresis width (VHYS) VDD OUT VSS VDD Output from the OUT pin VSS V Figure 15 2. CMOS Output Products VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS Hysteresis width (VHYS) VDD OUT VSS VDD Output from the OUT pin VSS V Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the shaded region. Figure 16 Seiko Instruments Inc. 21 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Operation 1. Basic Operation: CMOS Output (Active Low) Rev.4.3_00 1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in (RB + RC) • VDD Figure 17 is OFF, the comparator input voltage is . RA + RB + RC 1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 18), the Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time the Nch transistor N1 in Figure 17 becomes ON, the comparator input voltage is changed to RB • VDD . RA + RB 1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the VDD when the output is pulled up to the VDD. 1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET. 1-5. When the VDD rises above +VDET (point B in Figure 18), the Nch transistor becomes OFF and the Pch transistor becomes ON to provide VDD level at the output. VDD *1 *1 RA RB VREF RC − + Pch *1 OUT Nch N1 VSS *1. Parasiteic diode Figure 17 Operation 1 22 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series (1) Hysteresis width (VHYS) (2) (3) A (4) B (5) VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS VDD Output from the OUT pin VSS Figure 18 Operation 2 2. Other Characteristics 2-1. Temperature Characteristics of Detection Voltage The shaded area in Figure 19 shows the temperature characteristics of the detection voltage. −VDET [V] +0.945 mV/°C −VDET25 *1 −0.945 mV/°C −40 25 85 Ta [°C] *1. −VDET25 is an actual detection voltage value at 25°C. Figure 19 Temperature Characteristics of Detection Voltage (Example for S-80827C) 2-2. Temperature Characteristics of Release Voltage The temperature coefficient ∆ + VDET for the release voltage is calculated by the temperature coefficient ∆Ta ∆ − VDET of the detection voltage as follows: ∆Ta ∆ + VDET + VDET ∆ − VDET = × ∆Ta − VDET ∆Ta The temperature coefficients for the release voltage and the detection voltage have the same sign consequently. Seiko Instruments Inc. 23 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 2-3. Temperature Characteristics of Hysteresis Voltage Rev.4.3_00 The temperature characteristics for the hysteresis voltage is expressed as calculated as follows: ∆ + VDET ∆ − VDET VHYS ∆ − VDET − = × ∆Ta ∆Ta − VDET ∆Ta ∆ + VDET ∆ − VDET − and is ∆Ta ∆Ta Standard Circuit R*1 100 kΩ OUT VSS VDD *1. R is unnecessary for CMOS output products. Figure 20 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Technical Terms 1. Detection Voltage (−VDET), Release Voltage (+VDET) The detection voltage (−VDET) is a voltage at which the output turns to low. The detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (−VDET) Min. and the maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 21). Example: For the S-80815CN, the detection voltage lies in the range of 1.470≤(−VDET)≤1.530. This means that some S-80815CNs have 1.470 V for −VDET and some have 1.530 V. The release voltage (+VDET) is a voltage at which the output turns to high. The release voltage varies slightly among products of the same specification. The variation of release voltages between the specified minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure 22). The range is calculed from the actual detection voltage (−VDET) of a product and is expressed by −VDET×1.03≤+VDET≤−VDET ×1.08. Example: For the S-80815CN, the release voltage lies in the range of 1.514≤(+VDET)≤1.652. This means that some S-80815CNs have 1.514 V for +VDET and some have 1.652 V. 24 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series VDD Release voltage range (+VDET) Min. VDD (−VDET) Max. (−VDET) Min. Detection voltage Detection voltage range Release voltage (+VDET) Max. OUT OUT Figure 21 Detection Voltage (CMOS Output Products) Figure 22 Release Voltage (CMOS Output Products) Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V, +VDET is always larger than −VDET. 2. Hysteresis Width (VHYS) The hysteresis width is the voltage difference between the detection voltage and the release voltage (The voltage at point B −The voltage at point A =VHYS in Figure 18). The existence of the hysteresis width prevents malfunction caused by noise on input signal. 3. Through-type Current The through-type current refers to the current that flows instantaneously at the time of detection and release of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain output products. 4. Oscillation In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active low product for example, the through-type current which is generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current]×[input resistance] across the resistor. When the input voltage drops below the detection voltage (−VDET) as a result, the output voltage goes to low level. In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes from low to high. A through-type current is again generated, a voltage drop appears, and repeating the process finally induces oscillation. VDD RA VIN S-808xxCL OUT RB VSS Figure 23 An Example for Bad Implementation of Input Voltage Divider Seiko Instruments Inc. 25 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Electrical Characteristics for Customized Products 1. S-80824KNUA-D2BT2G, S-80824KNY-x-G Table 18 Rev.4.3_00 Item Detection voltage Release voltage Current consumption Operating voltage Output current Leakage current *1 Symbol −VDET +VDET ISS VDD IOUT ILEAK Response time tPLH Detection voltage ∆ − VDET 1 temperature Ta = −40 to 85 °C ±100 ±350 ppm/°C  ∆Ta • − VDET coefficient*3 *1. −VDET: Actual detection voltage value *2. Specified detection voltage value (−VDET(S)) *3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta • − VDET ∆Ta *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient (Ta = 25 °C unless otherwise specified) Test Condition Min. Typ. Max. Unit circuit V 1 2.295 2.400*2 2.505  4.300 4.400 4.500 V 1  0.8 2.4 2 VDD=6.0 V  µA 0.95 10.0 V 1   0.24 mA 3 Output transistor, VDD = 0.95 V 0.03  Nch, VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3  Output transistor, 0.1 3   µA Nch, VDD = 10.0 V, VDS = 10.0 V 60 1    µs 26 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 2. S-80844KLUA-D2AT2G, S-80844KLY-x-G Table 19 Item Detection voltage Release voltage Current consumption Operating voltage Output current *1 Symbol −VDET +VDET ISS VDD IOUT Response time tPLH Detection voltage ∆ − VDET 1 temperature Ta = −40 to 85 °C ±100 ±350 ppm/°C  ∆Ta • − VDET coefficient*3 *1. −VDET: Actual detection voltage value *2. Specified detection voltage value (−VDET(S)) *3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient (Ta = 25 °C unless otherwise specified) Test Condition Min. Typ. Max. Unit circuit V 1 4.295 4.450*2 4.605  4.700 V 1    1.0 3.0 2 VDD = 6.0 V  µA 0.95 10.0 V 1   0.50 mA 3 Output transistor, VDD = 1.2 V 0.23  Nch, VDS = 0.5 V VDD = 2.4 V 1.60 3.70 mA 3  Output transistor, 0.62 mA 4 VDD = 4.8 V 0.36  Pch, VDS = 0.5 V 60 1    µs Seiko Instruments Inc. 27 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 3. S-80846KNUA-D2CT2G, S-80846KNY-x-G Table 20 Rev.4.3_00 Item Detection voltage Hysteresis width Current consumption Operating voltage Output current Leakage current Response time Detection voltage temperature coefficient*3 *1 Symbol −VDET VHYS ISS VDD IOUT ILEAK tPLH ∆ − VDET ∆Ta • − VDET Condition   VDD = 6.0 V  Output transistor, VDD = 1.2 V Nch, VDS = 0.5 V VDD = 2.4 V Output transistor, Nch, VDD = 10.0 V, VDS = 10.0 V  Ta = −40 to 85 °C (Ta = 25 °C unless otherwise specified) Test Min. Typ. Max. Unit circuit *2 4.700 V 1 4.500 4.600 0.05 0.10 V 1  0.9 2.7 2  µA 0.95 10.0 V 1  0.59 1.36 mA 3  2.88 4.98 mA 3       ±100 0.1 60 ±350 µA µs ppm/°C 3 1 1 *1. −VDET: Actual detection voltage value *2. Specified detection voltage value (−VDET(S)) *3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient Precautions • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type current during releasing. • In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the power supply voltage (VDD) is slow near the detection voltage. • When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the products on the circuits described herein. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products including this IC upon patents owned by a third party. 28 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Typical Characteristics (Typical Data) 1. Detection Voltage (VDET) - Temperature (Ta) S-80808CL 0.90 S-80814CL 1.55 1.50 +VDET VDET (V) VDET (V) 0.85 +VDET 1.45 1.40 1.35 1.30 1.25 -40 -20 0 20 40 60 80 0.80 -VDET -VDET 0.75 -40 -20 0 Ta (°C) 20 40 60 80 Ta (°C) S-80815CL 1.60 S-80860CL 6.40 6.30 +VDET VDET (V) VDET (V) 1.55 +VDET 6.20 6.10 6.00 5.90 5.80 -40 -20 0 1.50 -VDET 1.45 -40 -20 0 -VDET Ta (°C) 20 40 60 80 Ta (°C) 20 40 60 80 2. Hysteresis Voltage Width (VHYS) - Temperature (Ta) S-80808CL 8.0 7.0 V HYS (%) S-80814CL 8.0 7.0 5.0 4.0 3.0 -40 VHYS (%) -20 0 20 40 Ta (°C) 60 80 6.0 6.0 5.0 4.0 3.0 -40 -20 0 20 40 60 80 Ta (°C) S-80815CL 8.0 7.0 V HYS (%) S-80860CL 8.0 7.0 VHYS (%) -20 0 20 40 Ta (°C) 60 80 6.0 5.0 4.0 3.0 -40 6.0 5.0 4.0 3.0 -40 -20 0 Ta (°C) 20 40 60 80 Seiko Instruments Inc. 29 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 3. Current Consumption (ISS) - Input Voltage (VDD) S-80808CL 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 9.3 µA Rev.4.3_00 Ta=25°C S-80814CL 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1.0 21.5 µA Ta=25°C ISS (µA) 1.0 2.0 3.0 4.0 5.0 6.0 ISS (µA) 2.0 3.0 4.0 5.0 6.0 VDD (V) VDD (V) S-80815CL 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 4.7 µA Ta=25°C S-80860CL 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2.0 4.0 6.0 12.8 µA Ta=25°C ISS (µA) ISS (µA) 2.0 4.0 6.0 8.0 10.0 12.0 VDD (V) VDD (V) 8.0 10.0 12.0 4. Current Consumption (ISS) - Temperature (Ta) S-80808CL 2.0 1.5 VDD=1.5 V S-80814CL 2.0 1.5 VDD=2.0 V ISS (µA) 1.0 0.5 0.0 -40 -20 0 20 40 60 80 ISS (µA) 1.0 0.5 0.0 Ta (°C) S-80815CL 2.0 1.5 -40 -20 0 Ta (°C) 20 40 60 80 VDD=3.5 V S-80860CL 2.0 1.5 VDD=7.5 V ISS (µA) 1.0 0.5 0.0 -40 -20 0 20 40 60 80 ISS (µA) 1.0 0.5 0.0 -40 -20 0 Ta (°C) Ta (°C) 20 40 60 80 30 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 5. Nch Transistor Output Current (IOUT) – VDS S-80814CL/CN 5.0 4.0 IOUT (mA) 3.0 2.0 1.0 0 0 0.5 1.0 1.5 VDS (V) 2.0 2.5 VDD=1.0 VDD=0.7 V Ta=25°C VDD=1.3 V IOUT (mA) S-80860CL/CN 50 40 30 20 10 0 0 1.0 2.4 V VDD=1.2 V 2.0 3.0 VDS (V) 4.0 5.0 3.6 V Ta=25°C 6.0 V 4.8 V 6. Pch Transistor Output Current (IOUT) -VDS S-80808CL 5.0 4.0 IOUT (mA) 3.0 2.0 1.0 0 0 0.5 VDD=0.9 V Ta=25ºC VDD=2.9V VDD=2.4V VDD=1.9 V VDD=1.4 V 2.0 2.5 IOUT (mA) S-80815CL 30 25 20 15 10 5 0 0 2.0 6.0 V 4.8 V 3.6 V VDD=2.4 V 4.0 6.0 VDS (V) 8.0 10.0 Ta=25ºC 8.4 V 7.2 V 1.0 1.5 VDS (V) 7. Nch Transistor Output Current (IOUT) - Input Voltage (VDD) S-80814CL/CN 6.0 Ta=-40°C 4.5 IOUT (mA) 3.0 1.5 Ta=85° 0 0 0.5 1.0 VDD (V) 1.5 2.0 VDS=0.5 V S-80860CL/CN 20 Ta=-40°C 15 IOUT (mA) Ta=25°C 10 5 0 0 2.0 4.0 VDD (V) VDS=0.5 V Ta=25°C Ta=85°C 6.0 8.0 8. Pch Transistor Output Current (IOUT) - Input Voltage (VDD) S-80808CL 3.0 2.5 VDS=0.5 V Ta=-40°C S-80815CL 6 5 VDS=0.5 V Ta=-40°C Ta=25°C IOUT (mA) 1.5 1.0 0.5 0 0 1.0 2.0 3.0 4.0 5.0 6.0 IOUT (mA) 2.0 Ta=25°C 4 3 2 1 0 0 Ta=85°C Ta=85°C VDD (V) 2.0 4.0 6.0 8.0 10.0 12.0 VDD (V) Seiko Instruments Inc. 31 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 9. Minimum Operating Voltage - Input Voltage (VDD) S-80808CN 1.2 0.9 Rev.4.3_00 Pull-up to VDD 100 kΩ S-80808CN 4.0 3.0 Ta=-40°C Pull-up to 3 V VOUT (V) 0.6 Ta=25°C 0.3 0.0 0.0 0.2 0.4 0.6 0.8 1.0 Ta=85°C VOUT ( V) Ta=-40°C 2.0 1.0 0.0 0.2 0.4 Ta=25°C Ta=85°C VDD (V) S-80815CN 2.0 1.5 1.0 0.5 0.0 0 0.5 VDD (V) 0.6 0.8 1.0 Pull-up to VDD 100 kΩ S-80815CN 4.0 3.0 Ta=-40°C Pull-up to 3 V VOUT (V) VOUT (V) Ta=-40°C Ta=25°C Ta=85°C 1.0 1.5 2.0 2.0 1.0 0.0 0 0.5 Ta=25°C Ta=85°C VDD (V) VDD (V) 1.0 1.5 2.0 S-80808CN 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 Pull-up to VDD :100 kΩ Ta=-40°C VOUT(V) PULL-UP VDDmin (V) PULL-UP× 0.1 Ta=25°C Ta=85°C 0 VDDmin VDD(V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 PULL-UP (V) Remark VDDmin. is defined by the VDD voltage at which VOUT goes below 10% of PULL-UP voltage when the VDD increase from 0 V. Figure 24 S-80815CN 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 Ta=-40°C Pull-up to VDD :100 kΩ VDDmin (V) Ta=85°C Ta=25°C 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 PULL-UP (V) 32 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 10. Dynamic Response - COUT S-80808CL 1 Ta=25°C tpHL S-80808CN 100 Ta=25°C tpLH Response time (ms) Resopnse time (ms) 10 1 0.1 0.1 0.01 tpLH 0.001 0.00001 0.0001 0.001 0.01 0.1 tpHL 0.01 0.001 0.00001 Load capacitance (µF) 0.0001 Load capacitance (µF) 0.001 0.01 0.1 S-80814CL 1 Ta=25°C tpHL S-80814CN 100 Ta=25°C tpLH Response time (ms) Response time (ms) 10 1 0.1 0.1 0.01 tpLH 0.001 0.00001 0.0001 0.001 0.01 0.1 tpHL 0.01 0.001 0.00001 Load capacitanse (µF) S-80815CL 1 0.0001 Load Capacitance (µF) 0.001 0.01 0.1 Ta=25°C tpHL S-80815CN 100 Ta=25°C tpLH Response time (ms) Response time (ms) 10 1 0.1 0.1 0.01 tpLH 0.001 0.00001 0.0001 0.001 0.01 0.1 tpHL 0.01 0.001 0.00001 Load Capacitance (µF) S-80860CL 1 0.0001 Load Capacitance (µF) 0.001 0.01 0.1 Ta=25°C tpHL S-80860CN 100 tpLH Ta=25°C Response time (ms) 0.1 Respone time (ms) 10 1 0.1 0.01 0.001 0.00001 0.01 tpLH 0.001 0.00001 tpHL 0.0001 0.001 0.01 0.1 Load Capacitance (µF) 0.0001 Load Capacitance (µF) 0.001 0.01 0.1 Seiko Instruments Inc. 33 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Rev.4.3_00 1 µs VIH Input voltagae VIL VDD Output voltage VDD×10 % tpHL 1 µs VDD V VDD S-808xxC OUT Series COUT VSS R 100 k Ω *1 tpLH VDD×90 % V *1. R is unnecessary for CMOS output products. VIH=10 V, VIL=0.95 V Figure 25 Measurement Condition for Response Time Figure 26 Measurement Circuit for Response Time Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Application Circuit Examples 1. Microcomputer Reset Circuits If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. Reset circuits shown in Figures 27 to 28 can be easily constructed with the help of the S-808xxC series, that has low operating voltage, a high-precision detection voltage and hysteresis. VDD1 VDD S808xxCL VDD2 S808xxCN Microcomputer VSS Microcomputer VSS (Only for Nch open-drain products) Figure 27 Reset Circuit Example(S-808xxCL) Figure 28 Reset Circuit Example (S-808xxCN) Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. 34 Seiko Instruments Inc. Rev.4.3_00 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 2. Power-on Reset Circuit A power-on reset circuit can be constructed using Nch open-drain output product of S-808××C Series. VDD R (R≤75 kΩ) C VSS *1 Di VIN *2 S808xxCN OUT (Nch open-drain products) *1. Resistor R should be 75 kΩ or less to prevent oscillation. *2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the power falling,Di can be removed when the delay of the falling time is not important. Figure 29 VDD (V) OUT (V) t (s) t (s) Figure 30 Remark When the power rises sharply as shown in the Figure 31 left, the output may goes to the high level for an instant in the undefined region where the output voltage is undefined since the power voltage is less than the minimum operation voltage. VDD (V) OUT (V) t (s) t (s) Figure 31 Seiko Instruments Inc. 35 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series 3. Change of Detection Voltage Rev.4.3_00 In Nch open-drain output products of the S-808xxC series, detection voltage can be changed using resistance dividers or diodes as shown in Figures 32 to 33. In Figure 32, hysteresis width also changes. VDD RA *1 VDD Vf1 VIN + − (RA≤75 k Ω) S808xxCN Vf2 OUT VIN S808xxCN OUT RB VSS (Nch open-drain output products) (Nch open-drain output product) VSS Detection voltagae = RA + RB • − VDET RB RA + RB Hysterisis width = • VHYS RB Detection voltage=Vf1+Vf2+(−VDET) *1. RA should be 75 kΩ or less to prevent oscillation. Caution If RA and RB are large, the hysteresis width may aloso be larger than the value given by the above equation due to the through-type current (which flows slightly in an Nch open-drain product). Figure 32 Figure 33 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. 36 Seiko Instruments Inc. 2.0±0.2 4 1.3±0.2 3 0.05 1 2 0.16 -0.06 +0.1 0.3 -0.05 +0.1 0.4 -0.05 +0.1 No. NP004-A-P-SD-1.1 TITLE No. SCALE UNIT SC82AB-A-PKG Dimensions NP004-A-P-SD-1.1 mm Seiko Instruments Inc. ø1.5 -0 +0.1 4.0±0.1 2.0±0.05 4.0±0.1 1.1±0.1 0.2±0.05 ø1.05±0.1 (0.7) 2.2±0.2 2 1 3 4 Feed direction No. NP004-A-C-SD-3.0 TITLE No. SCALE UNIT SC82AB-A-Carrier Tape NP004-A-C-SD-3.0 mm Seiko Instruments Inc. 4.0±0.1 2.0±0.1 ø1.5 +0.1 -0 1.1±0.1 0.2±0.05 4.0±0.1 ø1.05±0.1 2.3±0.15 2 1 3 4 Feed direction No. NP004-A-C-S1-2.0 TITLE No. SCALE UNIT SC82AB-A-Carrier Tape NP004-A-C-S1-2.0 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. NP004-A-R-SD-1.1 TITLE No. SCALE UNIT mm SC82AB-A-Reel NP004-A-R-SD-1.1 QTY. 3,000 Seiko Instruments Inc. 2.9±0.2 1.9±0.2 5 4 1 2 3 0.16 -0.06 +0.1 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.2 TITLE No. SCALE UNIT SOT235-A-PKG Dimensions MP005-A-P-SD-1.2 mm Seiko Instruments Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 2.0±0.05 0.25±0.1 ø1.0 -0 +0.2 4.0±0.1 1.4±0.2 3.2±0.2 321 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE No. SCALE UNIT SOT235-A-Carrier Tape MP005-A-C-SD-2.1 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. MP005-A-R-SD-1.1 TITLE No. SCALE UNIT mm SOT235-A-Reel MP005-A-R-SD-1.1 QTY. 3,000 Seiko Instruments Inc. 4.5±0.1 1.6±0.2 1.5±0.1 1 2 3 1.5±0.1 1.5±0.1 0.4±0.05 45° 0.4±0.1 0.45±0.1 0.4±0.1 No. UP003-A-P-SD-1.1 TITLE No. SCALE UNIT SOT893-A-PKG Dimensions UP003-A-P-SD-1.1 mm Seiko Instruments Inc. ø1.5 -0 +0.1 4.0±0.1(10 pitches : 40.0±0.2) 2.0±0.05 ø1.5 +0.1 -0 5° max. 8.0±0.1 0.3±0.05 2.0±0.1 4.75±0.1 Feed direction No. UP003-A-C-SD-1.1 TITLE No. SCALE UNIT SOT893-A-Carrier Tape UP003-A-C-SD-1.1 mm Seiko Instruments Inc. 16.5max. Enlarged drawing in the central part 13.0±0.3 (60°) (60°) No. UP003-A-R-SD-1.1 TITLE No. SCALE UNIT mm SOT893-A-Reel UP003-A-R-SD-1.1 QTY. 1,000 Seiko Instruments Inc. 1.2±0.04 4 3 1 2 +0.05 0.08 -0.02 0.65 0.48±0.02 0.2±0.05 No. PF004-A-P-SD-4.0 TITLE No. SCALE UNIT SNT-4A-A-PKG Dimensions PF004-A-P-SD-4.0 mm Seiko Instruments Inc. ø1.5 -0 +0.1 2.0±0.05 4.0±0.1 0.25±0.05 5° 1.45±0.1 ø0.5 -0 +0.1 4.0±0.1 0.65±0.05 2 1 3 4 Feed direction No. PF004-A-C-SD-1.0 TITLE No. SCALE UNIT SNT-4A-A-Carrier Tape PF004-A-C-SD-1.0 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. PF004-A-R-SD-1.0 TITLE No. SCALE UNIT mm SNT-4A-A-Reel PF004-A-R-SD-1.0 QTY. 5,000 Seiko Instruments Inc. 0.52 1.16 0.52 0.3 0.35 0.3 Caution Making the wire pattern under the package is possible. However, note that the package may be upraised due to the thickness made by the silk screen printing and of a solder resist on the pattern because this package does not have the standoff. No. PF004-A-L-SD-3.0 TITLE No. SCALE UNIT SNT-4A-A-Land Recommendation PF004-A-L-SD-3.0 mm Seiko Instruments Inc. 5.2max. 4.2max. Marked side 0.6max. 0.45±0.1 0.45±0.1 1.27 No. YS003-B-P-SD-1.1 TITLE No. SCALE UNIT TO92-B-PKG Dimensions YS003-B-P-SD-1.1 mm Seiko Instruments Inc. 5.2max. 4.2max. Marked side 0.6max. 0.45±0.1 0.45±0.1 +0.4 2.5 -0.1 1.27 No. YF003-A-P-SD-1.1 TITLE No. SCALE UNIT TO92-A-PKG Dimensions YF003-A-P-SD-1.1 mm Seiko Instruments Inc. 1.0max. 12.7±1.0 Marked side 1.0max. 0.5max. 1#pin 3#pin 1.45max. 0.7±0.2 6.35±0.4 ø4.0±0.2 12.7±0.3(20 pitches : 254.0±1.0) Feed direction Marked side Feed direction No. YF003-A-C-SD-4.1 TITLE No. SCALE UNIT TO92-A-Radial Tape YF003-A-C-SD-4.1 mm Seiko Instruments Inc. 2±0.5 5±0.5 ø358±2 43±0.5 53±0.5 No. YF003-A-R-SD-2.1 TITLE No. SCALE UNIT mm TO92-A-Reel YF003-A-R-SD-2.1 QTY. 2,000 Seiko Instruments Inc. 5.2max. 4.2max. Marked side 0.6max. 0.45±0.1 0.45±0.1 +0.4 2.5 -0.1 1.27 No. YF003-A-P-SD-1.1 TITLE No. SCALE UNIT TO92-C-PKG Dimensions YF003-A-P-SD-1.1 mm Seiko Instruments Inc. 1.0max. 12.7±1.0 Marked side 1.0max. 0.5max. 1#pin 3#pin 1.45max. 0.7±0.2 6.35±0.4 ø4.0±0.2 12.7±0.3(20 pitches : 254.0±1.0) Z type Feed direction No. YZ003-C-C-SD-3.1 TITLE No. SCALE UNIT TO92-C-Radial Tape YZ003-C-C-SD-3.1 mm Seiko Instruments Inc. Spacer 60 320 40 Side spacer placed in front side 165 320 Space more than 4 strokes 262 330 47 No. YZ003-C-Z-SD-2.1 TITLE No. SCALE UNIT TO92-C-Ammo Packing YZ003-C-Z-SD-2.1 QTY. 2,500 mm Seiko Instruments Inc. • • • • • • The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.