TS9001-1IJ5

TS9001 1.6V Nanopower Comparator with Internal Reference FEATURES DESCRIPTION ♦ Improved Electrical Performance over MAX9117-MAX9118 ♦ Guaranteed to Operate Down to +1.6V ♦ Ultra-Low Supply Current: 600nA ♦ Internal 1.252V ±1% Reference ♦ Input Voltage Range Extends 200mV Outsidethe-Rails ♦ No Phase Reversal for Overdriven Inputs ♦ Output Stage: Push-pull (TS9001-1) Open-Drain (TS9001-2) ♦ Crowbar-Current-Free Switching ♦ Internal Hysteresis for Clean Switching ♦ 5-pin SC70 Packaging The nanopower TS9001-1/2 analog comparators guarantee +1.6V operation, draw very little supply current, and have robust input stages that can tolerate input voltages beyond the power supply. Both products are the first analog comparator products in the “NanoWatt Analog” high-performance analog integrated circuits portfolio. The TS9001-1/2 draws 600nA of supply current and includes an on-board +1.252V±1% reference. These comparators are also electrically and form-factor identical to the MAX9117 and the MAX9118 family of analog comparators. Both comparators offer a 33% improvement in voltage reference initial accuracy and the TS9001-1 offers 73% higher output current drive. APPLICATIONS The TS9001-1’s push-pull output drivers were designed to drive 5mA loads from one supply rail to the other supply rail. The TS9001-2’s open-drain output stage make it easy to incorporate this analog comparator into systems that operate on different supply voltages. Both devices are available in an ultra-small 5-pin SC70 package. 2-Cell Battery Monitoring/Management Medical Instruments Threshold Detectors/Discriminators Sensing at Ground or Supply Line Ultra-Low-Power Systems Mobile Communications Telemetry and Remote Systems TYPICAL APPLICATION CIRCUIT PART TS9001-1 TS9001-2 INTERNAL REFERENCE Yes Yes OUTPUT STAGE Push-Pull Open-Drain INConnection REF REF SUPPLY CURRENT (nA) 600 600 Page 1 © 2014 Silicon Laboratories, Inc. All rights reserved. TS9001 ABSOLUTE MAXIMUM RATINGS Supply Voltage (VCC to VEE) ............................................ +6V Voltage Inputs (IN+, IN-, REF) .... (VEE - 0.3V) to (VCC + 0.3V) Output Voltage TS9001-1 ................................. (VEE - 0.3V) to (VCC + 0.3V) TS9001-2 ............................................... (VEE - 0.3V) to +6V Current Into Input Pins ................................................ ±20mA Output Current ............................................................ ±50mA Output Short-Circuit Duration ............................................ 10s Continuous Power Dissipation (TA = +70°C) 5-Pin SC70 (Derate 2.5mW/°C above +70°C) ....... 200 mW Operating Temperature Range ...................... -40°C to +85°C Junction Temperature ................................................ +150°C Storage Temperature Range ....................... -65°C to +150°C Lead Temperature (soldering, 10s) ............................... +300° Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. PACKAGE/ORDERING INFORMATION ORDER NUMBER PART CARRIER QUANTITY MARKING TS9001-1IJ5 Tape & Reel ----- TS9001-1IJ5T Tape & Reel 3000 TS9001-2IJ5 Tape & Reel ----- Tape & Reel 3000 TAF TAG TS9001-2IJ5T Lead-free Program: Silicon Labs supplies only lead-free packaging. Please consult Silicon Labs for products specified with wider operating temperature ranges. Page 2 TS9001 Rev. 1.0 TS9001 ELECTRICAL CHARACTERISTICS: TS9001-1/2 VCC = +5V, VEE = 0V, VIN+ = VREF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C. See Note 1 PARAMETER SYMBOL Supply Voltage Range VCC Supply Current ICC IN+ Voltage Range VIN+ Input Offset Voltage VOS Input-Referred Hysteresis VHB Input Bias Current Power-Supply Rejection Ratio Output-Voltage Swing High IB PSRR VCC - VOH Output-Voltage Swing Low VOL Output Leakage Current ILEAK Output Short-Circuit Current ISC High-to-Low Propagation Delay (Note 4) tPD- Low-to-High Propagation Delay (Note 4) tPD+ Rise Time Fall Time tRISE tFALL Power-Up Time tON Reference Voltage VREF CONDITIONS Inferred from the PSRR test VCC = 1.6V MIN TA = TMIN to TMAX TA = +25°C TA = +25°C TA = TMIN to TMAX Inferred from the output swing test TA = +25°C (Note 2) TA = TMIN to TMAX (Note 3) TA = +25°C TA = TMIN to TMAX VCC = 1.6V to 5.5V, TA = TMIN to TMAX TA = +25°C TS9001-1, VCC = 5V, ISOURCE = 5mA TA = TMIN to TMAX VCC = 1.6V, TA = +25°C TS9001-1, ISOURCE = 1mA VCC = 1.6V, TA = TMIN to TMAX TA = +25°C VCC = 5V, ISINK = 5mA TA = TMIN to TMAX VCC = 1.6V, TA = +25°C ISINK = 1mA VCC = 1.6V, TA = TMIN to TMAX TS9001-2 only, VO = 5.5V VCC = 5V Sourcing, VO = VEE VCC = 1.6V VCC = 5V Sinking, VO = VCC VCC = 1.6V VCC = 1.6V VCC = 5V VCC = 1.6V TS9001-1 only VCC = 5V VCC = 1.6V, RPULLUP = 100kΩ TS9001-2 only VCC = 5V, RPULLUP = 100kΩ TS9001-1 only, CL = 15pF CL = 15pF 1.6 0.6 0.68 VCC = 5V VEE - 0.2 2 4 0.15 MAX UNITS 5.5 V 1 1.30 1.60 VCC + 0.2 5 10 ∆VREF/ ∆VCC Reference Load Regulation ∆VREF/ ∆IOUT ∆IOUT = 10nA TCVREF V mV mV mV/V 100 150 mV 110 200 300 50 100 200 nA 200 mV 150 0.002 60 6 90 10 12 15 25 50 1 μA mA µs µs 21 28 3.5 2 1.239 1.233 1.252 10 BW = 10Hz to 100kHz BW = 10Hz to 100kHz, CREF = 1nF VCC = 1.6V to 5.5V μA 1 2 1 300 400 µs µs 1.2 TA = +25°C TA = TMIN to TMAX Reference Voltage Temperature Coefficient Reference Output Voltage Noise Reference Line Regulation en TYP 1 0.2 0.1 ±0.2 ms 1.264 1.270 V ppm/°C mVRMS mV/V mV/nA Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by device characterization, not production tested. Note 2: VOS is defined as the center of the hysteresis band at the input. Note 3: The hysteresis-related trip points are defined by the edges of the hysteresis band and measured with respect to the center of the hysteresis band (i.e., VOS). See Figure 2. Note 4: The propagation delays are specified with an input overdrive (VOVERDRIVE) of 100mV and an output load capacitance of CL = 15pF. VOVERDRIVE is defined above and is beyond the offset voltage and hysteresis of the comparator input. Reference voltage error should also be included. TS9001 Rev. 1.0 Page 3 TS9001 TYPICAL PERFORMANCE CHARACTERISTICS VCC = +5V; VEE = 0V; CL = 15pF; VOVERDRIVE = 100mV; TA = +25°C, unless otherwise noted. Supply Current vs Supply Voltage and Temperature Supply Current vs Temperature 1.3 1.1 SUPPLY CURENT - µA SUPPLY CURENT - µA 1 1.1 TA = +85°C 0.9 0.7 TA = +25°C TA = -40°C 0.9 VCC =+5V 0.8 VCC =+3V 0.7 0.6 VCC =+1.8V 0.5 0.5 0.4 1.5 2.5 4.5 3.5 5.5 -40 -15 35 10 60 85 TEMPERATURE - °C SUPPLY VOLTAGE - Volt Supply Current vs Output Transition Frequency Output Voltage Low vs. Sink Current 35 250 VCC =+1.8V 200 25 VCC =+5V VOL - mV SUPPLY CURRENT - µA 30 20 15 VCC =+3V 150 VCC =+5V VCC =+3V 100 10 VCC =+1.8V 50 5 0 0 1 10 1k 100 10k 0 2 OUTPUT TRANSITION FREQUENCY - Hz 4 6 10 12 14 16 SINK CURRENT- mA Output Voltage Low vs. Sink Current and Temperature TS9001-1 Output Voltage High vs Source Current 0.5 300 VCC =+1.8V TA = +85°C VCC – VOH - V VOL - mV VCC =+3V 0.4 200 TA = +25°C 100 TA = -40°C 0.3 VCC =+5V 0.2 0.1 0 0 0 2 4 6 8 10 12 SINK CURRENT- mA Page 4 8 14 16 0 2 4 6 8 10 12 14 16 18 20 SOURCE CURRENT- mA TS9001 Rev. 1.0 TS9001 TYPICAL PERFORMANCE CHARACTERISTICS VCC = +5V; VEE = 0V; CL = 15pF; VOVERDRIVE = 100mV; TA = +25°C, unless otherwise noted. TS9001-1 Output Voltage High Short-Circuit Sink Current vs Temperature vs Source Current and Temperature 0.6 120 0.5 100 SINK CURRENT- mA VCC – VOH - V TA = +85°C 0.4 0.3 TA = +25°C 0.2 TA = -40°C 0.1 VCC =+5V 80 60 VCC =+3V 40 VCC =+1.8V 20 0 0 0 4 8 12 16 20 -40 35 60 85 TEMPERATURE - °C SOURCE CURRENT- mA Offset Voltage vs Temperature Short-Circuit Source Current vs Temperature 140 2.6 120 2.4 100 VCC =+5V VOS - mV SOURCE CURRENT- mA 10 -15 80 60 VCC =+3V VCC =+1.8V, 3V 2.0 1.8 40 1.6 VCC =+1.8V 20 2.2 0 VCC =+5V 1.4 -40 -15 10 35 60 85 -40 TEMPERATURE - °C -15 10 35 60 85 TEMPERATURE - °C Reference Voltage vs Temperature Hysteresis Voltage vs Temperature 1.260 5.5 REFERENCE VOLTAGE - V 1.258 5 VHB - mV 4.5 4 3.5 3 1.256 VCC =+1.8V 1.254 1.252 1.250 VCC =+3V 1.248 VCC =+5V 1.246 1.244 1.242 2.5 1.240 -40 -15 10 35 TEMPERATURE - °C TS9001 Rev. 1.0 60 85 -40 -15 10 35 60 85 TEMPERATURE - °C Page 5 TS9001 TYPICAL PERFORMANCE CHARACTERISTICS VCC = +5V; VEE = 0V; CL = 15pF; VOVERDRIVE = 100mV; TA = +25°C, unless otherwise noted. Reference Voltage vs Reference Source Current Reference Voltage vs Supply Voltage 1.254 1.260 REFERENCE VOLTAGE - V REFERENCE VOLTAGE - V 1.258 1.253 1.252 1.251 1.250 1.256 VCC =+1.8V 1.254 1.252 1.250 1.248 VCC =+3V, 5V 1.246 1.244 1.242 1.240 1.249 1.5 2.5 3.5 4.5 5.5 0 Reference Voltage vs Reference Sink Current 28 1.258 26 10 24 VCC =+1.8V VCC =+5V 22 1.254 VCC =+3V 20 VCC =+3V, 5V 1.252 8 6 Propagation Delay (tPD-) vs Temperature 1.260 tPD- - µs REFERENCE VOLTAGE - V 4 SOURCE CURRENT- nA SUPPLY VOLTAGE - Volt 1.256 2 1.250 1.248 18 16 14 1.246 12 1.244 10 1.242 8 1.240 VCC =+1.8V 6 0 2 4 8 6 10 -40 SINK CURRENT- nA -15 10 35 60 85 TEMPERATURE - °C Propagation Delay (tPD-) vs Capacitive Load TS9001-1 Propagation Delay (tPD+) vs Temperature 70 200 60 180 VCC =+5V 160 140 VCC =+3V 40 tPD- - µs tPD+ - µs 50 30 VCC =+1.8V 120 100 VCC =+3V 60 20 VCC =+1.8V 40 10 20 0 0 -40 -15 10 35 TEMPERATURE - °C Page 6 VCC =+5V 80 60 85 0.01 0.1 1 10 100 1000 CAPACITIVE LOAD - nF TS9001 Rev. 1.0 TS9001 TYPICAL PERFORMANCE CHARACTERISTICS VCC = +5V; VEE = 0V; CL = 15pF; VOVERDRIVE = 100mV; TA = +25°C, unless otherwise noted. TS9001-1 Propagation Delay (tPD+) vs Capacitive Load 180 Propagation Delay (tPD-) vs Input Overdrive 80 160 70 140 60 VCC =+1.8V VCC =+5V 50 VCC =+3V 100 tPD- - µs tPD+ - µs 120 VCC =+5V 80 40 VCC =+3V 30 60 20 40 VCC =+1.8V 10 20 0 0 0.01 1 0.1 10 100 1000 0 10 CAPACITIVE LOAD - nF 30 40 50 INPUT OVERDRIVE - mV TS9001-2 Propagation Delay (tPD-) vs Pullup Resistance TS9001-1 Propagation Delay (tPD+) vs Input Overdrive 100 15 VCC =+5V 90 14 80 70 VCC =+3V VCC =+5V 13 60 tPD- - µs tPD+ - µs 20 50 40 VCC =+3V 12 11 30 VCC =+1.8V 20 10 VCC =+1.8V 10 0 9 0 20 10 30 40 50 10 INPUT OVERDRIVE - mV 100 1k 10k RPULLUP - kΩ Propagation Delay (tPD-) at VCC = +5V TS9001-2 Propagation Delay (tPD+) vs Pullup Resistance 200 INPUT 180 160 VCC =+1.8V 100 80 VCC =+3V 60 VCC =+5V 40 OUTPUT tPD+ - µs 140 120 20 0 10 100 RPULLUP - kΩ TS9001 Rev. 1.0 1k 100k 20µs/DIV Page 7 TS9001 TYPICAL PERFORMANCE CHARACTERISTICS VCC = +5V; VEE = 0V; CL = 15pF; VOVERDRIVE = 100mV; TA = +25°C, unless otherwise noted. Propagation Delay (tPD-) at VCC = +3V OUTPUT OUTPUT INPUT INPUT TS9001-1 Propagation Delay (tPD+) at VCC = +5V 20µs/DIV TS9001-1 Propagation Delay (tPD+) at VCC = +3V Propagation Delay (tPD-) at VCC = +1.8V OUTPUT OUTPUT INPUT INPUT 20µs/DIV 20µs/DIV 20µs/DIV TS9001-1 Propagation Delay (tPD+) at VCC = +1.8V TS9001-1 10kHz Transient Response at VCC = +1.8V OUTPUT OUTPUT INPUT INPUT SUPPLY VOLTAGE - Volt 20µs/DIV Page 8 20µs/DIV TS9001 Rev. 1.0 TS9001 TYPICAL PERFORMANCE CHARACTERISTICS VCC = +5V; VEE = 0V; CL = 15pF; VOVERDRIVE = 100mV; TA = +25°C, unless otherwise noted. TS9001-1 1kHz Transient Response at VCC = +5V INPUT OUTPUT INPUT OUTPUT 200µs/DIV TS9001 Rev. 1.0 Power-Up/Power-Down Transient Response 0.2s/DIV Page 9 TS9001 PIN FUNCTIONS TS9001-1 TS9001-2 SC70-5 1 2 3 4 — 5 — NAME OUT VEE IN+ REF/INREF VCC IN- FUNCTION Comparator Output Negative Supply Voltage Comparator Noninverting Input 1.252V Reference Output/Comparator Inverting Input 1.252V Reference Output Positive Supply Voltage Comparator Inverting Input BLOCK DIAGRAMS DESCRIPTION OF OPERATION Guaranteed to operate from +1.6V supplies, the TS9001-1 and the TS9001-2 analog comparators only draw 600nA supply current, feature a robust input stage that can tolerate input voltages 200mV beyond the power supply rails, and include an onboard +1.252V ±1% voltage reference. To insure clean output switching behavior, both analog comparators feature 4mV internal hysteresis. The TS9001-1’s push-pull output drivers were designed to minimize supply-current surges while driving ±5mA loads with rail-to-rail output swings. The opendrain output stage TS9001-2 can be connected to supply voltages above VCC to an absolute maximum of 6V above VEE. Where wired-OR logic connections are needed, their open-drain output stages make it easy to use this analog comparator. Page 10 Input Stage Circuitry The robust design of the analog comparators’ input stage can accommodate any differential input voltage from VEE - 0.2V to VCC + 0.2V. Input bias currents are typically ±0.15nA so long as the applied input voltage remains between the supply rails. ESD protection diodes - connected internally to the supply rails - protect comparator inputs against overvoltage conditions. However, if the applied input voltage exceeds either or both supply rails, an increase in input current can occur when these ESD protection diodes start to conduct. TS9001 Rev. 1.0 TS9001 Output Stage Circuitry Many conventional analog comparators can draw orders of magnitude higher supply current when switching. Because of this behavior, additional power supply bypass capacitance may be required to provide additional charge storage during switching. The design of the TS9001-1’s rail-to-rail output stage implements a technique that virtually eliminates supply-current surges when output transitions occur. The supply-current change as a function of output transition frequency exhibited by these analog comparators is very small. Material benefits of this attribute to battery-power applications are the increase in operating time and in reducing the size of power-supply filter capacitors. Figure 1: TS9001’s Internal VREF Output Equivalent Circuit Internal Voltage Reference The TS9001-1/2’s internal +1.252V voltage reference exhibits a typical temperature coefficient of 40ppm/°C over the full -40°C to +85°C temperature range. An equivalent circuit for the reference section is illustrated in Figure 1. Since the output impedance of the voltage reference Is typically 200kΩ, its output can be bypassed with a low-leakage capacitor and is stable for any capacitive load. An external buffer – such as the TS1001 – can be used to buffer the voltage reference output for higher output current drive or to reduce reference output impedance. APPLICATIONS INFORMATION Low-Voltage, Low-Power Operation Because they were designed specifically for lowpower, battery-operated applications, the TS90011/2 comparators are an excellent choice. Under nominal conditions, approximate operating times for this analog comparator family is illustrated in Table 1 for a number of battery types and their corresponding charge capacities. Internal Hysteresis As a result of circuit noise or unintended parasitic feedback, many analog comparators often break into oscillation within their linear region of operation especially when the applied differential input voltage approaches 0V (zero volt). Externally-introduced hysteresis is a well-established technique to stabilizing analog comparator behavior and requires external components. As shown in Figure 2, adding comparator hysteresis creates two trip points: VTHR (for the rising input voltage) and VTHF (for the falling input voltage). The hysteresis band (VHB) is defined as the voltage difference between the two trip points. When a comparator’s input voltages are equal, hysteresis effectively forces one comparator input to move quickly past the other input, moving the input Table 1: Battery Applications using the TS9001 Alkaline (2 Cells) No VFRESH (V) 3.0 1.8 CAPACITY, AA SIZE (mA-h) 2000 Nickel-Cadmium (2 Cells) Yes 2.4 1.8 750 937,500 Lithium-Ion (1 Cell) Nickel-Metal- Hydride (2 Cells) Yes 3.5 2.7 1000 1.25 x 106 Yes 2.4 1.8 1000 1.25 x 106 BATTERY TYPE TS9001 Rev. 1.0 RECHARGEABLE VEND-OF-LIFE (V) TS9001 OPERATING TIME (hrs) 2.5 x 106 Page 11 TS9001 out of the region where oscillation occurs. Figure 2 illustrates the case in which an IN- input is a fixed voltage and an IN+ is varied. If the input signals were reversed, the figure would be the same with an inverted output. To save cost and external pcb area, an internal 4mV hysteresis circuit was added to the TS9001-1/2. point is (VREF - VOUT)/R2. In solving for R2, there are two formulas – one each for the two possible output states: R2 = VREF/IR2 or R2 = (VCC - VREF)/IR2 From the results of the two formulae, the smaller of the two resulting resistor values is chosen. For example, when using the TS9001-1 (VREF = 1.252V) at a VCC = 3.3V and if IR2 = 0.2μA is chosen, then the formulae above produce two resistor values: 6.26MΩ and 10.24MΩ - the 6.2MΩ standard value for R2 is selected. Figure 2: TS9001 Threshold Hysteresis Band Adding Hysteresis to the TS9001-1 Push-pull Output Option 2) Next, the desired hysteresis band (VHYSB) is set. In this example, VHYSB is set to 100mV. 3) Resistor R1 is calculated according to the following equation: The TS9001-1 exhibits an internal hysteresis band (VHYSB) of 4mV. Additional hysteresis can be R1 = R2 x (VHYSB/VCC) and substituting the values selected in 1) and 2) above yields: R1 = 6.2MΩ x (100mV/3.3V) = 187.88kΩ. The 187kΩ standard value for R1 is chosen. Figure 3: Using Three Resistors Introduces Additional Hysteresis in the TS9001-1. generated with three external resistors using positive feedback as shown in Figure 3. Unfortunately, this method also reduces the hysteresis response time. The procedure to calculate the resistor values for the TS9001-1 is as follows: 1) Setting R2. As the leakage current at the IN pin is less than 2nA, the current through R2 should be at least 0.2μA to minimize offset voltage errors caused by the input leakage current. The current through R2 at the trip Page 12 4) The trip point for VIN rising (VTHR) is chosen such that VTHR > VREF x (R1 + R2)/R2 (VTHF is the trip point for VIN falling). This is the threshold voltage at which the comparator switches its output from low to high as VIN rises above the trip point. In this example, VTHR is set to 3V. 5) With the VTHR from Step 4 above, resistor R3 is then computed as follows: R3 = 1/[VTHR/(VREF x R1) - (1/R1) - (1/R2)] R3 = 1/[3V/(1.252V x 187kΩ) - (1/187kΩ) - (1/6.2MΩ)] = 136.9kΩ In this example, a 137kΩ, 1% standard value resistor is selected for R3.. TS9001 Rev. 1.0 TS9001 6) The last step is to verify the trip voltages and hysteresis band using the standard resistance values: where the smaller of the two resulting resistor values is the best starting value. For VIN rising: 2) As before, the desired hysteresis band (VHYSB) is set to 100mV. VTHR = VREF x R1 [(1/R1) + (1/R2) + (1/R3)] = 3V 3) Next, resistor R1 is then computed according to the following equation: For VIN falling: VTHF = VTHR - (R1 x VCC/R2) = 2.9V and Hysteresis Band = VTHR – VTHF = 100mV Adding Hysteresis to the TS9001-2 Open-Drain Option The TS9001-2 has open-drain output and requires an external pull-up resistor to VCC as shown in Figure 4. Additional hysteresis can be generated R1 = (R2 + R4) x (VHYSB/VCC) 4) The trip point for VIN rising (VTHR) is chosen (again, remember that VTHF is the trip point for VIN falling). This is the threshold voltage at which the comparator switches its output from low to high as VIN rises above the trip point. 5) With the VTHR from Step 4 above, resistor R3 is computed as follows: R3 = 1/[VTHR/(VREF x R1) - (1/R1) - (1/R2)] 6) As before, the last step is to verify the trip voltages and hysteresis band with the standard resistor values used in the circuit: For VIN rising: VTHR = VREF x R1 x (1/R1+1/R2+1/R3) For VIN falling: VTHF = VREF x R1 x (1/R1+1/R3+1/(R2+R4)) -(R1/(R2+R4)) x VCC Figure 4: Using Four Resistors Introduces Additional Hysteresis in the TS9001-2. using positive feedback; however, the formulae differ slightly from those of the push-pull option TS9001-1. The procedure to calculate the resistor values for the TS9001-2 is as follows: 1) As in the previous section, resistor R2 is chosen according to the formulae: R2 = VREF/0.2µA or and Hysteresis Band is given by VTHR - VTHF PC Board Layout and Power-Supply Bypassing While power-supply bypass capacitors are not typically required, it is good engineering practice to use 0.1uF bypass capacitors close to the device’s power supply pins when the power supply impedance is high, the power supply leads are long, or there is excessive noise on the power supply traces. To reduce stray capacitance, it is also good engineering practice to make signal trace lengths as short as possible. Also recommended are a ground plane and surface mount resistors and capacitors. R2 = (VCC - VREF)/0.2μA - R4 TS9001 Rev. 1.0 Page 13 TS9001 PACKAGE OUTLINE DRAWING 5-Pin SC70 Package Outline Drawing (N.B., Drawings are not to scale) 0.65 TYP. 0.15 - 0.30 5 2 4 1.80 - 2.40 1 2 3 1.30 TYP. 1.80 - 2.20 8º - 12º ALL SIDE 1 0.800 – 0.925 LEAD FRAME THICKNESS 0.10 - 0.18 0.40 – 0.55 0.15 TYP. GAUGE PLANE 1.00 MAX 1.15 - 1.35 0.00 - 0.10 0º - 8º 0.10 MAX 0.26 - 0.46 0.275 - 0.575 NOTES: 1 DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 2 DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSIONS. 3. DIE IS FACING UP FOR MOLDING. DIE IS FACING DOWN FOR TRIM/FORM. 4 ALL SPECIFICATION COMPLY TO JEDEC SPEC MO-203 AA 5. CONTROLLING DIMENSIONS IN MILIMITERS. 6. ALL SPECIFICATIONS REFER TO JEDEC MO-203 AA 7. LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC Patent Notice Silicon Labs invests in research and development to help our customers differentiate in the market with innovative low-power, small size, analogintensive mixed-signal solutions. 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Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders. Page 14 Silicon Laboratories, Inc. 400 West Cesar Chavez, Austin, TX 78701 +1 (512) 416-8500 ▪ www.silabs.com TS9001 Rev. 1.0 Smart. Connected. Energy-Friendly Products Quality Support and Community www.silabs.com/products www.silabs.com/quality community.silabs.com Disclaimer Silicon Laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. 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