SSF3055

SSF3055 DESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a Battery protection or in other Switching application. G D S GENERAL FEATURES ● VDS = 25V,ID = 12A RDS(ON) < 120mΩ @ VGS=5V RDS(ON) < 90mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram 3 2 1 S D G Application ●Battery protection ●Load switch ●Power management Marking and pin Assignment TO-252(DPAK) top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 3055 Device SSF3055 Device Package To-252(DPAK) Reel Size Tape width Quantity - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID Drain Current-Continuous@ Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 25 ±20 12 45 48 -55 To 150 Unit V V A A W ℃ 75 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance VGS(th) RDS(ON) VDS=VGS,ID=250µA VGS=5V, ID=12A VGS=10V, ID=12A BVDSS IDSS IGSS VGS=0V ID=250µA VDS=20V,VGS=0V VGS=±20V,VDS=0V Min 25 Typ Max Unit V 25 ±250 0.8 1.2 70 50 2.5 120 90 µA nA V mΩ mΩ ©Silikron Semiconductor CO.,LTD. 2008.7.29 Version : 1.0 page 1 of 3 SSF3055 Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD IS VGS=0V,IS=12A 30 43 1.5 12 V A nS nC td(on) tr td(off) tf Qg Qgs Qgd VDS=12.5V,ID=6A,VGS=10V VDS=15V,ID=12A VGS=10V,RGEN=2.5Ω RL=1Ω 6 6 20 5 15 2.0 7.0 nS nS nS nS nC nC nC Clss Coss Crss VDS=15V,VGS=0V, F=1.0MHz 450 200 60 PF PF PF gFS VDS=15V,ID=12A 16 S Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = IS, dlF/dt = 100A / µS NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vd d td(on) ton tr 90% td(off) toff tf 90% Vin V gs R gen G Rl D V out VOUT 10% INVERTED 10% 90% S VIN 10% 50% 50% PULSE WIDTH Figure 1: Switching Test Circuit Figure 2:Switching Waveforms ©Silikron Semiconductor CO.,LTD. 2008.7.29 Version : 1.0 page 2 of 3 SSF3055 TO-252 PACKAGE INFORMATION NOTES： 1. No current JEDEC outline for this package. 2. L3 and b3 dimensions establish a minimum mounting surface for terminal 3. 3. Dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. L1 is the terminal length for soldering. 6. Position of lead to be measured 0.090 inches (2.28mm) from bottom of dimension D. 7. Controlling dimension: Inch. ©Silikron Semiconductor CO.,LTD. 2008.7.29 Version : 1.0 page 3 of 3