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BTB41

BTB41

  • 厂商:

    SIRECT

  • 封装:

  • 描述:

    BTB41 - Discrete Triacs(Non-Isolated/Isolated) - Sirectifier Global Corp.

  • 数据手册
  • 价格&库存
BTB41 数据手册
BTB/BTA41 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 G T2 T1 T2 C D E F G H G T1 J K L M N ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t V alue for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns TO-247AD F = 60 Hz F = 50 Hz Tc = 80 °C t = 16.7 ms t = 20 ms Value 41 420 400 880 Tj = 125° C 50 Unit A A A²s A/µs tp = 10 ms F = 120 Hz VDSM/V RSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate p owe r diss ipation Storage junction temperature range Operating junction temperature r ange tp = 10 ms tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125° C VDRM/VRRM + 100 V A W °C 8 1 - 40 to + 150 - 40 to + 125 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I- III-IV II MIN. MIN. (dI/dt)c (2) Without snubber RL = 33 Ω RL = 3.3 kΩ Tj = 125°C Test Conditions Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. Value 50 100 1 .3 0.2 80 70 160 500 10 V/µs A/ms Unit mA V V mA mA BTB/BTA41 Discrete Triacs(Non-Isolated/Isolated) STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IG T is guaranted at 5% of IG T max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 60 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 10 5 5 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM THERMA L RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 0.6 50 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTB/BTA41 X X 50 mA Standard TO-247AD Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA41 Marking BTB/BTA41 Weight 4.5 g Base quantity 120 Packing mode Bulk BTB/BTA41 Discrete Triacs(Non-Isolated/Isolated) F i g. 1 : M a x imum power dis s ipation ve rs us R M S on-s ta te c urrent ( fu ll c yc le ) . 50 40 30 20 10 IT (R MS ) (A ) 0 0 5 10 15 20 25 30 35 40 α F i g. 2 : R M S o n-s ta te c u rre nt ve rs us c as e te mperatu re ( full c yc le). 45 40 35 30 25 20 15 10 5 0 IT (R MS ) (A ) B TA 41 B T B 41 P (W) α = 180° 180° α T c (° C ) 0 25 50 75 100 125 F i g. 3 : R e la tive va r iation of ther ma l impeda nc e ve rs u s puls e duration. 1.E +00 K =[Zth/R th] Zth(j-c) F i g. 4 : va lues ). IT M (A ) O n -s ta te c ha ra c te ris tics ( ma x imum 400 100 T j max 1.E -01 Zth(j-a) B TA/B T B 41 1.E -02 10 T j=25°C tp (s ) 1.E -03 1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03 V T M (V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T j max.: V to = 0.85 V R d = 10 mΩ 4.0 4.5 5.0 F i g. 5 : S urge peak o n-s ta te c urrent ve rs us numbe r of c ycle s . F i g. 6 : N on-repetitive s urge pea k on-s tate c urrent fo r a s inus oidal puls e with width tp < 1 0 ms , a nd c o rre s po nding va lue of I ²t. IT S M (A ), I² t (A ² s ) IT S M 450 400 350 300 250 200 150 100 50 0 IT S M (A ) 10000 t=20ms Non repetitive T j initial=25°C One cycle 1000 dI/dt limitation: 50A /µ s I²t R epetitive T c=70°C Number of c y c les 1 10 100 1000 tp (ms ) 100 0.01 0.10 1.00 T j initial=25°C 10.0 0 BTB/BTA41 Discrete Triacs(Non-Isolated/Isolated) F i g. 7 : R ela tive va ria tio n of gate trigger c u rrent, holding c urrent a n d la tc hing c urrent ve rs us junc tion te mpe rature ( ty pic al va lue s ). IG T ,IH,IL [T j] / IG T ,IH,IL [T j=25° C ] 2.0 1.8 IG T F i g. 8 : R ela tive va r iation of c r itic a l ra te of dec reas e o f ma in c u rre nt ve rs us (dV /dt)c (typic a l va lues ). 2.5 2.0 1.5 1.0 0.5 (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 1.6 1.4 1.2 1.0 0.8 0.6 (dV /dt)c (V /µ ) s 1.0 10.0 100.0 IH & IL T j(° C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 0.4 0.1 F i g. 9 : R ela tive va ria tio n of c ritic al ra te of dec reas e of ma in c u rre nt ve rs us junc tio n te mpe rature . (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 0 0 25 50 T j (° C ) 75 100 125
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