PS75N75

E L E C T R O N I C PS75N75 - 75Amp 75Volt N-Channel Enhancement Mode Field Effect Transistor □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications □ Feature -Small surface mounting type -High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current capability -Voltage controlled small signal switch □ Circuit D G □ Construction -N-Channel Enhancement S □ Absolute Maximum Ratings PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current-Continuos @ TA = 125ºC (Note 1) -Pulsed (Note 2) Drain-Source Diode Forward Current Maximum Power Dissipation Operting Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note: 1.Surface Mounted on FR-4 Board, t≦2% 2.Pulse Test : 380μs pulse width, 2% duty cycle SYMBOL VDS VGS ID IDM IS PD TJ , TSTG RθJA PS75N75 75 ± 20 75 300 60 220 -55 to +175 50 UNIT V V A A W ºC ºC/W June 2009 / Rev.6.4 http:// www.sirectsemi.com PS75N75 □ Electrical Characteristics PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Ststic Drain-Source On-Resistance Forward Transconductance SWITCHING CHARACTERSTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Times Fall Time DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V f = 1.0MHz 3300 530 80 pF Qg Qgs Qgd TD(on) tr TD(off) tf VDD = 38V, ID = 48A VGEN = 10V, RL = 10Ω RGEN = 4.7Ω VDD = 38V, ID = 48A VGEN = 10V, RL = 10Ω RGEN = 4.7Ω VDS = 60V, ID = 48A VGS = 10V, RGEN = 4.7Ω 90 20 30 12 79 80 52 140 35 45 nS nS nC VGS(th) RDS(ON) gFS VDS = VGS, ID = -250μA VGS = 10V, ID = 48A VDS = 25V, ID = 30A 2 9 50 4 11 V mΩ S BVDSS IDSS IGSS VGS = 0V, ID = -250μA VDS = 20V, VGS = 0V VGS = ±16V, VDS = 0V 75 20 ±100 V μA nA SYMBOL CONDITIONS MIN. TYP. MAX. UNIT DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS = 0V, IS = 60A 1.5 V http:// www.sirectsemi.com PS75N75 250 VGE = 10V 250 VGS = 10V 9V 8V 7V 200 200 ID, DRAIN CURRENT (A) 150 ID, DRAIN CURRENT (A) 4V 150 6V 100 100 5V 50 50 0 0 10 20 30 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. Output Characteristics 5000 f = 1MHz VGS = 0V Figure 2. Transfer Characteristics 2.8 ID = 30A VGS = 10V 4000 RDS(ON), ON-RESISTANCE (mΩ) 50 2.2 C, CAPACTIANCE (pF) 3000 1.6 2000 CISS 1.0 1000 COSS CROSS 0 0 10 20 30 40 0.4 -50 0 50 100 150 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (ºC) Figure 3. Capacitance Characteristics 1.3 Figure 4. On-Resistance Variation with temperature 1.20 Vth, NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 BVDDSS, NORMALIZED DRAINS-SOURCE BREAKDOWN VGE = 10V ID = 250µA ID = 250µA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (ºC) TJ, JUNCTION TEMPERATURE (ºC) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature http:// www.sirectsemi.com PS75N75 21 18 15 12 9 6 3 0 0 5 10 15 20 25 30 20 IS, SOURCE-DRAIN CURRENT (A) VGS = 5V Tj = 25ºC TRANSCONDUCTANCE (S) 10 1 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS, DRAIN-SOURCE CURRENT (A) VDS, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transconductance Variation with Drain Current 10 Figure 8. Body Diode Forward Voltage Variation with Source Current VGS, GATE TO SOURCE VOLTAGE VDS = 30V ID = 75A 8 6 4 2 0 0 2 4 6 8 10 12 14 TOTAL GATE CHARGE (nC) Figure 9. Gate Charge http:// www.sirectsemi.com PS75N75 TO-220AB PACKAGE L B C D K E A M F O I J G H H N G D S DIM A B C D E F G H I J K L M N O DIMENSIONS INCHES MM MIN MAX MIN MAX .579 .606 14.70 15.40 .392 .411 9.95 10.45 .104 .116 2.65 2.95 .248 .272 6.30 6.90 .325 .350 8.25 8.90 .126 .157 3.20 4.00 .492 .551 12.50 14.00 .096 .108 2.45 2.75 .028 .039 0.70 1.00 .010 .022 0.25 0.55 .146 .157 3.70 4.00 .167 .187 4.25 4.75 .045 .057 1.15 1.45 .089 .114 2.25 2.90 .047 .055 1.20 1.40 NOTE Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com China: st@sirectsemi.com …Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com http:// www.sirectsemi.com