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MBR1035CT

MBR1035CT

  • 厂商:

    SIRECTIFIER

  • 封装:

  • 描述:

    MBR1035CT - Wide Temperature Range and High Tjm Schottky Barrier Rectifiers - Sirectifier Semiconduc...

  • 数据手册
  • 价格&库存
MBR1035CT 数据手册
MBR1030CT thru MBR1045CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C(TAB) A C A C A Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 MBR1030CT MBR1035CT MBR1040CT MBR1045CT Symbol I(AV) IFSM dv/dt VF Characteristics Maximum Average Forward Rectified Current @TC=105oC Maximum Ratings 10 125 10000 IF=5A @TJ=25oC IF=5A @TJ=125oC IF=10A @TJ=125oC @TJ=25oC @TJ=125oC 0.57 0.70 0.84 0.1 15 3.0 170 -55 to +150 -55 to +175 Unit A A V/us V Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range IR ROJC CJ TJ TSTG mA o C/W pF o o C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any MBR1030CT thru MBR1045CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers 16 PEAK FORW ARD SURGE CURRENT, AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 12 8 4 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 100 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 10 TJ = 125 C 10 1.0 0.1 1.0 0.01 TJ = 25 C TJ = 25 C PULSE W IDTH 300us 2% Duty cycle 0.001 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 MBR1030CT ~ MBR1045CT CAPACIT ANCE , (pF) 100 MBR1050CT ~ MBR1060CT TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
MBR1035CT 价格&库存

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