MBR2030CT thru MBR2045CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
A C(TAB) A C A C A Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45
MBR2030CT MBR2035CT MBR2040CT MBR2045CT Symbol I(AV) IFSM dv/dt
Characteristics Maximum Average Forward Rectified Current @TC=125oC
Maximum Ratings 20 150 10000 IF=10A IF=10A IF=20A IF=20A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.57 0.84 0.72 0.1 15 2.0 300 -55 to +150 -55 to +175
Unit A A V/us
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1)
VF
V
IR ROJC CJ TJ TSTG
Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2)
mA
o
C/W pF
o o
Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range
C C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any
MBR2030CT thru MBR2045CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
20
PEAK FORW ARD SURGE CURRENT , AMPERES
FIG.1 - FORW ARD CURRENT DERATING CURVE
AVERAGE FORW ARD CURRENT AMPERES
FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT
150 125 100 75 50 25 0 1 2 5 10 20 50 100
15
10
5
RESISTIVE OR INDUCTIVE LOAD
8.3ms Single Half-Sine-W ave (JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORW ARD CHARACTERISTICS
100
INSTANTANEOUS FORW ARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(mA)
100
10
TJ = 100 C
10
1.0
TJ = 75 C
1.0
0.1
TJ = 25 C
TJ = 25 C PULSE W IDTH 300us 2% Duty cycle
0.01 0 20 40 60 80 100 120 140
0.1 0.1 0.2 0.3 0.4 0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORW ARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
TJ = 25 C, f= 1MHz
CAPACIT ANCE , (pF)
1000
100 0.1 1 4 10 100
REVERSE VOLTAGE , VOLTS
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